Japanese Journal of Applied Physics
SCOPUS (1963-2023)SCIE-ISI
1347-4065
Cơ quản chủ quản: IOP Publishing Ltd. , Japan Society of Applied Physics
Lĩnh vực:
Engineering (miscellaneous)Physics and Astronomy (miscellaneous)
Các bài báo tiêu biểu
A New High-Tc Oxide Superconductor without a Rare Earth Element
We have discovered a new high-T
c oxide superconductor of the Bi-Sr-Ca-Cu-O system without any rare earth element. The oxide BiSrCaCu2 O
x
has T
c of...
Tập 27 Số 2A - Trang L209 - 1988
TiO2 Photocatalysis: A Historical Overview and Future Prospects
Photocatalysis has recently become a common word and various products using photocatalytic functions have been commercialized. Among many candidates for photocatalysts, TiO2 is almost the only material suitable for industrial use at present and also probably in the future. This is because TiO2 has the most efficient photoactivity, the highest s... ... hiện toàn bộ
Tập 44 Số 12R - Trang 8269 - 2005
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward cu... ... hiện toàn bộ
Tập 35 Số 1B - Trang L74 - 1996
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. The typical green LEDs had a peak wavelength of 525 nm and full width at half-maximum (FWHM) of 45 nm. The output power, the external quantum efficiency and the luminous intensity of green ... ... hiện toàn bộ
Tập 34 Số 7A - Trang L797 - 1995
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T
0 ) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.
Tập 35 Số 2S - Trang 1273 - 1996
GaN Growth Using GaN Buffer Layer
High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch sapphire substrate. Hall measurement was performed on GaN films grown with a GaN buffer layer as a function of the thickness of the GaN buffer layer. For the GaN film grown with a 200 Å-GaN buffer la... ... hiện toàn bộ
Tập 30 Số 10A - Trang L1705 - 1991
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
We have studied the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells. Our calculation suggests that an electric field of 1.08 MV/cm is induced by the piezoelectric effect in strained Ga0.87 In0.13 N grown on GaN. The photoluminescence peak energy of the Ga0.87 In... hiện toàn bộ
Tập 36 Số 4A - Trang L382 - 1997
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
Low-resistivity p-type GaN films were obtained by N2 -ambient thermal annealing at temperatures above 700°C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1×106 Ω·cm. After thermal annealing at temperatures above 700°C, the resistivity, hole carrier concentration and hole mobility became 2 ... ... hiện toàn bộ
Tập 31 Số 2B - Trang L139 - 1992
Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
Tập 19 Số 12 - Trang L735-L738 - 1980