Japanese Journal of Applied Physics
SCOPUS (1963-2025)SCIE-ISI
1347-4065
Cơ quản chủ quản: IOP Publishing Ltd. , Japan Society of Applied Physics
Lĩnh vực:
Engineering (miscellaneous)Physics and Astronomy (miscellaneous)
Phân tích ảnh hưởng
Các bài báo tiêu biểu
A New High-Tc Oxide Superconductor without a Rare Earth Element
Tập 27 Số 2A - Trang L209 - 1988
We have discovered a new high-T c oxide superconductor of the Bi-Sr-Ca-Cu-O
system without any rare earth element. The oxide BiSrCaCu2O x has T c of about
105 K, higher than that of YBa2Cu3O7 by more than 10 K. In this oxide, the
coexistence of Sr and Ca is necessary to obtain high T c.
TiO2 Photocatalysis: A Historical Overview and Future Prospects
Tập 44 Số 12R - Trang 8269 - 2005
Photocatalysis has recently become a common word and various products using
photocatalytic functions have been commercialized. Among many candidates for
photocatalysts, TiO2 is almost the only material suitable for industrial use at
present and also probably in the future. This is because TiO2 has the most
efficient photoactivity, the highest stability and the lowest cost. More
significantly, it h...
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Tập 35 Số 1B - Trang L74 - 1996
InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from
III-V nitride materials were grown by metalorganic chemical vapor deposition on
sapphire substrates. The mirror facet for a laser cavity was formed by etching
of III-V nitride films without cleaving. As an active layer, the InGaN MQW
structure was used. The InGaN MQW LDs produced 215 mW at a forward current of
2.3 A, with ...
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
Tập 34 Số 7A - Trang L797 - 1995
High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum
well structures based on III-V nitrides were grown by metalorganic chemical
vapor deposition on sapphire substrates. The typical green LEDs had a peak
wavelength of 525 nm and full width at half-maximum (FWHM) of 45 nm. The output
power, the external quantum efficiency and the luminous intensity of green LEDs
at a for...
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
Tập 35 Số 2S - Trang 1273 - 1996
We propose a novel material, GaInNAs, that can be formed on GaAs to drastically
improve the temperature characteristics (T 0) in long-wavelength-range laser
diodes. The feasibility of our proposal is demonstrated experimentally.
GaN Growth Using GaN Buffer Layer
Tập 30 Số 10A - Trang L1705 - 1991
High-quality gallium nitride (GaN) film was obtained for the first time using a
GaN buffer layer on a sapphire substrate. An optically flat and smooth surface
was obtained over a two-inch sapphire substrate. Hall measurement was performed
on GaN films grown with a GaN buffer layer as a function of the thickness of the
GaN buffer layer. For the GaN film grown with a 200 Å-GaN buffer layer, the
carr...
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tập 36 Số 4A - Trang L382 - 1997
We have studied the influence of piezoelectric fields on luminescence properties
of GaInN strained quantum wells. Our calculation suggests that an electric field
of 1.08 MV/cm is induced by the piezoelectric effect in strained Ga0.87In0.13N
grown on GaN. The photoluminescence peak energy of the Ga0.87In0.13N strained
quantum wells showed blue shift with increasing excitation intensity. Moreover,
t...
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
Tập 31 Số 2B - Trang L139 - 1992
Low-resistivity p-type GaN films were obtained by N2-ambient thermal annealing
at temperatures above 700°C for the first time. Before thermal annealing, the
resistivity of Mg-doped GaN films was approximately 1×106 Ω·cm. After thermal
annealing at temperatures above 700°C, the resistivity, hole carrier
concentration and hole mobility became 2 Ω·cm, 3×1017/cm3 and 10 cm2/V·s,
respectively. In photo...
Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures
Tập 19 Số 12 - Trang L735-L738 - 1980