1Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774
Tóm tắt
High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch sapphire substrate. Hall measurement was performed on GaN films grown with a GaN buffer layer as a function of the thickness of the GaN buffer layer. For the GaN film grown with a 200 Å-GaN buffer layer, the carrier concentration and Hall mobility were 4×1016/cm3 and 600 cm2/V·s, respectively, at room temperature. The values became 8×1015/cm3 and 1500 cm2/V·s at 77 K, respectively. These values of Hall mobility are the highest ever reported for GaN films. The Hall measurement shows that the optimum thickness of the GaN buffer layer is around 200 Å.
Từ khóa
Tài liệu tham khảo
1986, Appl. Phys. Lett., 48, 353, 10.1063/1.96549
1989, Jpn. J. Appl. Phys., 28, L2112, 10.1143/JJAP.28.L2112
