Japanese Journal of Applied Physics

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Ta-doped Anatase TiO2 Epitaxial Film as Transparent Conducting Oxide
Japanese Journal of Applied Physics - Tập 44 Số 8L - Trang L1063 - 2005
Taro Hitosugi, Yutaka Furubayashi, Atsuki Ueda, Kinnosuke Itabashi, Kazuhisa Inaba, Yasushi Hirose, Go Kinoda, Yukio Yamamoto, Toshihiro Shimada, Tetsuya Hasegawa
We present electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O2 film exhibited a resistivity of 2.5×10-4 Ω cm at room temperature, and an internal transmittance...... hiện toàn bộ
Field-Induced Martensitic Transformation in New Ferromagnetic Shape Memory Compound Mn1.07Co0.92Ge
Japanese Journal of Applied Physics - Tập 43 Số 12 - Trang 8036-8039
Keiichi Koyama, Masanari Sakai, T. Kanomata, Kazuo Watanabe
Chemical etching of silicon assisted by graphene oxide
Japanese Journal of Applied Physics - Tập 58 Số 5 - Trang 050924 - 2019
Wataru Kubota, Ryuko Ishizuka, Toru Utsunomiya, Takashi Ichii, Hiroyuki Sugimura
Growth of Super Long Aligned Brush-Like Carbon Nanotubes
Japanese Journal of Applied Physics - Tập 45 Số 7L - Trang L720 - 2006
Supriya Chakrabarti, T. Nagasaka, Yuya Yoshikawa, Lujun Pan, Yoshikazu Nakayama
Deposition of Ge1-xCx Alloy on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxial Method
Japanese Journal of Applied Physics - Tập 38 Số 6R - Trang 3459 - 1999
Hajime Shibata, Shinji Kimura, Paul Fons, A. Yamada, Akira Obara, Naoto Kobayashi
A combined ion beam and molecular beam epitaxial method was applied for the formation of a Ge1-x C x alloy on Si(100) using a low-energy (50–100 eV) C+ ion beam and a Ge molecular beam. Ge1-... hiện toàn bộ
Silicon-Germanium-Carbon Alloys Extending Si Based Heterostructure Engineering
Japanese Journal of Applied Physics - Tập 33 Số 4S - Trang 2388 - 1994
Adrian R. Powell Iyer
SiGe epitaxial growth on Si has been of interest for a number of years. In this work we consider the addition of 1 to 6% C into both Si and SiGe epitaxial material. We have used a solid, and a gas source, (acetylene), within a solid source SiGe molecular beam epitaxy system to produce a C flux. We have produced high-crystalline-quality Si1- ...... hiện toàn bộ
Fermi-Edge Singularity in One-Dimensional Metals: Effects of Hole Recoil and Electronic Correlation
Japanese Journal of Applied Physics - Tập 32 Số S2 - Trang 76 - 1993
Tetsuo Ogawa, Akira Furusaki, Naoto Nagaosa
The Fermi-edge singularity in optical spectra is studied theoretically for one-dimensional (1D) metals. Using the intermediate-coupling method, the critical exponent is obtained analytically for an arbitrary mass of an optical hole. The electronic correlation is also taken exactly into account by the Tomonaga-Luttinger's bosonization technique. The exponent is found to be i...... hiện toàn bộ
Effect of Cladding Material on 2-eV Optical Absorption in Pure-Silica Core Fibers and Method to Suppress the Absorption
Japanese Journal of Applied Physics - Tập 26 Số 1R - Trang 148 - 1987
Kaya Nagasawa, Ryoichi Tohmon, Yoshimichi Ohki
The growth of 2-eV optical absorption induced by γ-ray irradiation is larger in pure-silica core fibers with a dopedglass cladding than in the fibers with a silicone cladding, regardless of the manufacturing process. Precursors of nonbridging oxygen hole centers which abundantly exist at the core/cladding interface of the glass-cladding fibers are responsible for the difference in the a...... hiện toàn bộ
Characteristics of Polarized Electroluminescence from m-plane InGaN-based Light Emitting Diodes
Japanese Journal of Applied Physics - Tập 46 Số 11L - Trang L1010 - 2007
Hiroki Tsujimura, Satoshi Nakagawa, Kuniyoshi Okamoto, Hiroaki Ohta
Characterization of Indium Tin Oxide and Reactive Ion Etched Indium Tin Oxide Surfaces
Japanese Journal of Applied Physics - Tập 29 Số 10R - Trang 2243 - 1990
Yue Kuo
ITO films, both before and after annealing, were characterized with various methods. The changes in film characteristics are discussed. RIE etching mechanisms for the unannealed ITO films in three reactive gases (CF2Cl2, CF3Cl, and CF4) and two diluent gases (N2 and Ar) were delineat...... hiện toàn bộ
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