Japanese Journal of Applied Physics

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Ta-doped Anatase TiO2 Epitaxial Film as Transparent Conducting Oxide
Japanese Journal of Applied Physics - Tập 44 Số 8L - Trang L1063 - 2005
Taro Hitosugi, Yutaka Furubayashi, Atsuki Ueda, Kinnosuke Itabashi, Kazuhisa Inaba, Yasushi Hirose, Go Kinoda, Yukio Yamamoto, Toshihiro Shimada, Tetsuya Hasegawa
We present electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O2 film exhibited a resistivity of 2.5×10-4 Ω cm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a widely used transparent conducting oxi... hiện toàn bộ
Scattering of e ± from the neon isonuclear series over the energy range 1 eV–0.5 GeV
Japanese Journal of Applied Physics - Tập 59 Số SH - Trang SHHA05 - 2020
Mahmudul H. Khandker, A. K. F. Haque, M. Mâaza, M. Alfaz Uddin
p-Type Characteristics of Cu-Doped CdS Thin Films
Japanese Journal of Applied Physics - Tập 31 Số 4R - Trang 1170 - 1992
Yasube Kashiwaba, Itaru Kanno Itaru Kanno, Toshio Ikeda Toshio Ikeda
The characteristics of Cu-doped CdS films have been studied. Cu was easily diffused into CdS films when CdS was deposited on a Cu film successively at 200°C. The resistivity of the films increased initially with increasing Cu doping, but decreased for values of the Cu/Cd atomic ratio over about 0.5%. The Seebeck coefficient changed from negative to positive, and the Hall coefficient also changed f... hiện toàn bộ
Phosphorescence Decay Process of Ir(ppy)3 : Temperature Dependence of Decay Time
Japanese Journal of Applied Physics - Tập 44 Số 1S - Trang 591 - 2005
Taijū Tsuboi, Nadeer Aljaroudi
Theoretical calculation has been undertaken on the photoluminescence (PL) lifetime of fac tris(2-phenylpyridine) iridium (Ir(ppy)3) doped in polymethyl methacrylate (PMMA) and 4,4'-N,N'-dicarbazole-biphenyl (CBP), and its temperature dependence at 0–300 K. The emitting triplet state consists of three zero-field splitting substates. Taking into account one-phonon non-radiative transitions among the... hiện toàn bộ
Field-Induced Martensitic Transformation in New Ferromagnetic Shape Memory Compound Mn1.07Co0.92Ge
Japanese Journal of Applied Physics - Tập 43 Số 12 - Trang 8036-8039
Keiichi Koyama, Masanari Sakai, T. Kanomata, Kazuo Watanabe
Periodic GaAs Convex and Hole Arrays Produced by Metal-Assisted Chemical Etching
Japanese Journal of Applied Physics - Tập 49 Số 11R - Trang 116502 - 2010
Yukiko Yasukawa, Hidetaka Asoh, Sachiko Ono
Periodically ordered GaAs convex and hole arrays were fabricated through a combination of colloidal crystal templating and metal-assisted chemical etching using an ion-sputtered Pt–Pd catalyst. A change in the hydrofluoric acid concentration in the etchant results in different morphologies of hole arrays, such as circular and hexagonal holes. Pt–Pd-assisted chemical etching realizes an etching str... hiện toàn bộ
Formation of Periodic Microbump Arrays by Metal-Assisted Photodissolution of InP
Japanese Journal of Applied Physics - Tập 49 Số 4R - Trang 046505 - 2010
Hidetaka Asoh, Takayuki Yokoyama, Sachiko Ono
The metal-assisted chemical etching of an InP substrate combined with UV irradiation was investigated. Microbump arrays with ordered intervals were fabricated by the site-selective photodissolution of an InP substrate using patterned noble-metal films as catalysts. The etching rate of the InP substrate using noble-metal catalysts was drastically accelerated by UV irradiation. The etching speed of ... hiện toàn bộ
Chemical etching of silicon assisted by graphene oxide
Japanese Journal of Applied Physics - Tập 58 Số 5 - Trang 050924 - 2019
Wataru Kubota, Ryuko Ishizuka, Toru Utsunomiya, Takashi Ichii, Hiroyuki Sugimura
Observation of Tunneling Electron Luminescence at Low Temperatures Using Novel Conductive Transparent Tip
Japanese Journal of Applied Physics - Tập 34 Số 8S - Trang 4398 - 1995
Tooru Murashita, Masafumi Tanimoto
A novel conductive transparent (CT) tip has been developed that effectively collects tunneling-electron luminescence with a large solid angle of 2 sr in the direction of the most intensive photoemission. Using this CT tip, the spectrum of tunneling-electron luminescence from cleaved Zn-doped GaAs was obtained at 10 K.
Theory of Visible Light Emission from Scanning Tunneling Microscope
Japanese Journal of Applied Physics - Tập 31 Số 8R - Trang 2465 - 1992
Y. Uehara, Yuichi Kimura, Sukekatsu Ushioda Takeuchi
The mechanism for visible light emission from the scanning tunneling microscope (STM) has been investigated theoretically by adapting a theory for light emitting tunnel junctions (LETJ). From the analysis of the calculated results and available experimental data, the following picture emerges. The tunneling current first excites localized surface plasmons (LSP) that are localized in a region of a ... hiện toàn bộ
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