Japanese Journal of Applied Physics

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Ta-doped Anatase TiO2 Epitaxial Film as Transparent Conducting Oxide
Japanese Journal of Applied Physics - Tập 44 Số 8L - Trang L1063 - 2005
Taro Hitosugi, Yutaka Furubayashi, Atsuki Ueda, Kinnosuke Itabashi, Kazuhisa Inaba, Yasushi Hirose, Go Kinoda, Yukio Yamamoto, Toshihiro Shimada, Tetsuya Hasegawa
We present electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O2 film exhibited a resistivity of 2.5×10-4 Ω cm at room temperature, and an internal transmittance...... hiện toàn bộ
Chemical etching of silicon assisted by graphene oxide
Japanese Journal of Applied Physics - Tập 58 Số 5 - Trang 050924 - 2019
Wataru Kubota, Ryuko Ishizuka, Toru Utsunomiya, Takashi Ichii, Hiroyuki Sugimura
Growth of Super Long Aligned Brush-Like Carbon Nanotubes
Japanese Journal of Applied Physics - Tập 45 Số 7L - Trang L720 - 2006
Supriya Chakrabarti, T. Nagasaka, Yuya Yoshikawa, Lujun Pan, Yoshikazu Nakayama
Silicon-Germanium-Carbon Alloys Extending Si Based Heterostructure Engineering
Japanese Journal of Applied Physics - Tập 33 Số 4S - Trang 2388 - 1994
Adrian R. Powell Iyer
SiGe epitaxial growth on Si has been of interest for a number of years. In this work we consider the addition of 1 to 6% C into both Si and SiGe epitaxial material. We have used a solid, and a gas source, (acetylene), within a solid source SiGe molecular beam epitaxy system to produce a C flux. We have produced high-crystalline-quality Si1- ...... hiện toàn bộ
Fermi-Edge Singularity in One-Dimensional Metals: Effects of Hole Recoil and Electronic Correlation
Japanese Journal of Applied Physics - Tập 32 Số S2 - Trang 76 - 1993
Tetsuo Ogawa, Akira Furusaki, Naoto Nagaosa
The Fermi-edge singularity in optical spectra is studied theoretically for one-dimensional (1D) metals. Using the intermediate-coupling method, the critical exponent is obtained analytically for an arbitrary mass of an optical hole. The electronic correlation is also taken exactly into account by the Tomonaga-Luttinger's bosonization technique. The exponent is found to be i...... hiện toàn bộ
Effect of Cladding Material on 2-eV Optical Absorption in Pure-Silica Core Fibers and Method to Suppress the Absorption
Japanese Journal of Applied Physics - Tập 26 Số 1R - Trang 148 - 1987
Kaya Nagasawa, Ryoichi Tohmon, Yoshimichi Ohki
The growth of 2-eV optical absorption induced by γ-ray irradiation is larger in pure-silica core fibers with a dopedglass cladding than in the fibers with a silicone cladding, regardless of the manufacturing process. Precursors of nonbridging oxygen hole centers which abundantly exist at the core/cladding interface of the glass-cladding fibers are responsible for the difference in the a...... hiện toàn bộ
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Japanese Journal of Applied Physics - Tập 35 Số 1B - Trang L74 - 1996
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takehiro Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto
InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward cu...... hiện toàn bộ
Separation of Rare Earth Fluorescent Powders by Two-Liquid Flotation using Organic Solvents
Japanese Journal of Applied Physics - Tập 47 Số 6S - Trang 5093 - 2008
Akira Otsuki, Gjergj Dodbiba, Atsushi Shibayama, Jun Sadaki, Guangjun Mei, Toyohisa Fujita
A 1.3-µm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
Japanese Journal of Applied Physics - Tập 38 Số 12A - Trang L1355 - 1999
Masahiko Kondow, T. Kitatani, Kouji Nakahara, Toshiaki Tanaka
A 1.3-µm-range GaInNAs/GaAs single-quantum-well laser was tested for 1000 hours at 24°C under an auto-current-control condition. No degradation was observed. The threshold current fell slightly (14%). The lasing wavelength was stable. The lack of rapid degradation under an auto-power-control condition at a high temperature (50°C) suggests that a reliable GaInNAs laser d...... hiện toàn bộ
New Amorphous Al-Ln (Ln=Pr, Nd, Sm or Gd) Alloys Prepared by Melt Spinning
Japanese Journal of Applied Physics - Tập 27 Số 9A - Trang L1583 - 1988
Akihisa Inoue, Katsumasa Ohtera, Tao Zhang, Tsuyoshi Masumoto
New amorphous alloys in Al-Ln (Ln=Pr, Nd, Sm or Gd) binary systems have been formed in the vicinity of 10 at% Pr and in the ranges of 8 to 12%Nd or Gd and 8 to 16%Sm by rapid solidification. Crystallization temperature, hardness, tensile strength and electrical resistivity at 293 K of the binary amorphous alloys increase with an increase of solute content from 453 to 511 K, 150 to 325 D...... hiện toàn bộ
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