Ta-doped Anatase TiO2 Epitaxial Film as Transparent Conducting OxideJapanese Journal of Applied Physics - Tập 44 Số 8L - Trang L1063 - 2005
Taro Hitosugi, Yutaka Furubayashi, Atsuki Ueda, Kinnosuke Itabashi, Kazuhisa Inaba, Yasushi Hirose, Go Kinoda, Yukio Yamamoto, Toshihiro Shimada, Tetsuya Hasegawa
We present electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O2 film exhibited a resistivity of 2.5×10-4 Ω cm at room temperature, and an internal transmittance...... hiện toàn bộ
Silicon-Germanium-Carbon Alloys Extending Si Based Heterostructure EngineeringJapanese Journal of Applied Physics - Tập 33 Số 4S - Trang 2388 - 1994
Adrian R. Powell Iyer
SiGe epitaxial growth on Si has been of interest for a number of years. In this work we consider the addition of 1 to 6% C into both Si and SiGe epitaxial material. We have used a solid, and a gas source, (acetylene), within a solid source SiGe molecular beam epitaxy system to produce a C flux. We have produced high-crystalline-quality Si1-
...... hiện toàn bộ
Fermi-Edge Singularity in One-Dimensional Metals: Effects of Hole Recoil and Electronic CorrelationJapanese Journal of Applied Physics - Tập 32 Số S2 - Trang 76 - 1993
Tetsuo Ogawa, Akira Furusaki, Naoto Nagaosa
The Fermi-edge singularity in optical spectra is studied theoretically for one-dimensional (1D) metals. Using the intermediate-coupling method, the critical exponent is obtained analytically for an arbitrary mass of an optical hole. The electronic correlation is also taken exactly into account by the Tomonaga-Luttinger's bosonization technique. The exponent is found to be i...... hiện toàn bộ
Effect of Cladding Material on 2-eV Optical Absorption in Pure-Silica Core Fibers and Method to Suppress the AbsorptionJapanese Journal of Applied Physics - Tập 26 Số 1R - Trang 148 - 1987
Kaya Nagasawa, Ryoichi Tohmon, Yoshimichi Ohki
The growth of 2-eV optical absorption induced by γ-ray irradiation is larger in pure-silica core fibers with a dopedglass cladding than in the fibers with a silicone cladding, regardless of the manufacturing process. Precursors of nonbridging oxygen hole centers which abundantly exist at the core/cladding interface of the glass-cladding fibers are responsible for the difference in the a...... hiện toàn bộ
Characterization of Indium Tin Oxide and Reactive Ion Etched Indium Tin Oxide SurfacesJapanese Journal of Applied Physics - Tập 29 Số 10R - Trang 2243 - 1990
Yue Kuo
ITO films, both before and after annealing, were characterized with various methods. The changes in film characteristics are discussed. RIE etching mechanisms for the unannealed ITO films in three reactive gases (CF2Cl2, CF3Cl, and CF4) and two diluent gases (N2 and Ar) were delineat...... hiện toàn bộ