Ta-doped Anatase TiO2 Epitaxial Film as Transparent Conducting Oxide

Japanese Journal of Applied Physics - Tập 44 Số 8L - Trang L1063 - 2005
Taro Hitosugi1,2, Yutaka Furubayashi2, Atsuki Ueda1, Kinnosuke Itabashi3, Kazuhisa Inaba2,4, Yasushi Hirose2, Go Kinoda2, Yukio Yamamoto2, Toshihiro Shimada1,2, Tetsuya Hasegawa1,2
1Department of Chemistry, University of Tokyo, Tokyo 113-0033, Japan
2Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012, Japan
3Department of Environmental Chemical Engineering, Kogakuin University, Tokyo 163-8677, Japan
4Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

Tóm tắt

We present electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O2 film exhibited a resistivity of 2.5×10-4 Ω cm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a widely used transparent conducting oxide (TCO), indium tin oxide. Furthermore, this new material falls into a new category of TCOs that utilizes d electrons.

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Thông tin
Thông tin xuất bản

Japanese Journal of Applied Physics

Tập 44 Số 8L

L1063

Thông tin tác giả