InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Japanese Journal of Applied Physics - Tập 35 Số 1B - Trang L74 - 1996
Shuji Nakamura1, Masayuki Senoh1, Shin‐ichi Nagahama1, Naruhito Iwasa1, Takehiro Yamada1, Toshio Matsushita1, Hiroyuki Kiyoku1, Yasunobu Sugimoto1
1Department of Research and Development, Nichia Chemical Industries, Ltd.,

Tóm tắt

InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The mirror facet for a laser cavity was formed by etching of III-V nitride films without cleaving. As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs produced 215 mW at a forward current of 2.3 A, with a sharp peak of light output at 417 nm that had a full width at half-maximum of 1.6 nm under the pulsed current injection at room temperature. The laser threshold current density was 4 kA/cm2. The emission wavelength is the shortest one ever generated by a semiconductor laser diode.

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Tài liệu tham khảo

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Thông tin
Thông tin xuất bản

Japanese Journal of Applied Physics

Tập 35 Số 1B

L74

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