Masahiko Kondow1, T. Kitatani1, Kouji Nakahara2, Toshiaki Tanaka2
1RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd.,
2Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
Tóm tắt
A 1.3-µm-range GaInNAs/GaAs single-quantum-well laser was tested for 1000 hours
at 24°C under an auto-current-control condition. No degradation was observed.
The threshold current fell slightly (14%). The lasing wavelength was stable. The lack of
rapid degradation under an auto-power-control condition at a high temperature (50°C)
suggests that a reliable GaInNAs laser diode with a practical lifetime may soon be
realized.
Từ khóa
Tài liệu tham khảo
1996, Jpn. J. Appl. Phys., 35, 1273, 10.1143/JJAP.35.1273
1998, J. Cryst. Growth, 188, 255, 10.1016/S0022-0248(98)00060-8
