Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Japanese Journal of Applied Physics - Tập 36 Số 4A - Trang L382 - 1997
Tetsuya Takeuchi1, Shigetoshi Sota1, Maki Katsuragawa1, Miho Komori1, Hideo Takeuchi1, Hiroshi Amano1, Isamu Akasaki Isamu Akasaki1
1Department of Electrical and Electronic Engineering, Meijo University

Tóm tắt

We have studied the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells. Our calculation suggests that an electric field of 1.08 MV/cm is induced by the piezoelectric effect in strained Ga0.87In0.13N grown on GaN. The photoluminescence peak energy of the Ga0.87In0.13N strained quantum wells showed blue shift with increasing excitation intensity. Moreover, the well-width dependence of its luminescence peak energy was well explained when the piezoelectric fields were taken into account. These results clearly showed that the piezoelectric field induced the quantum-confined Stark effect.

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Japanese Journal of Applied Physics

Tập 36 Số 4A

L382

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