Masahiko Kondow1, K. Uomi2, A. Niwa2, T. Kitatani2, S. Watahiki2, Y. Yazawa2
1RWCP Optoelectronics Hitachi Laboratory, c/o Central Research Laboratory, Hitachi, Ltd.,
2Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185,Japan
Tóm tắt
We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.
