High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Japanese Journal of Applied Physics - Tập 34 Số 7A - Trang L797 - 1995
Shuji Nakamura1, Masayuki Senoh1, Naruhito Iwasa1, Shin‐ichi Nagahama1
1Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

Tóm tắt

High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. The typical green LEDs had a peak wavelength of 525 nm and full width at half-maximum (FWHM) of 45 nm. The output power, the external quantum efficiency and the luminous intensity of green LEDs at a forward current of 20 mA were 1 mW, 2.1% and 4 cd, respectively. The luminous intensity of green LEDs (4 cd) was about 40 times higher than that of conventional green GaP LEDs (0.1 cd). Typical yellow LEDs had a peak wavelength of 590 nm and FWHM of 90 nm. The output power of yellow LEDs was 0.5 mW at 20 mA. When the emission wavelength of III-V nitride LEDs with quantum well structures increased from the region of blue to yellow, the output power decreased dramatically.

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Thông tin xuất bản

Japanese Journal of Applied Physics

Tập 34 Số 7A

L797

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