Thermal Annealing Effects on P-Type Mg-Doped GaN Films

Japanese Journal of Applied Physics - Tập 31 Số 2B - Trang L139 - 1992
Shuji Nakamura1, Takashi Mukai1, Masayuki Senoh1, Naruhito Iwasa1
1Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774

Tóm tắt

Low-resistivity p-type GaN films were obtained by N2-ambient thermal annealing at temperatures above 700°C for the first time. Before thermal annealing, the resistivity of Mg-doped GaN films was approximately 1×106 Ω·cm. After thermal annealing at temperatures above 700°C, the resistivity, hole carrier concentration and hole mobility became 2 Ω·cm, 3×1017/cm3 and 10 cm2/V·s, respectively. In photoluminescence measurements, the intensity of 750-nm deep-level emissions (DL emissions) sharply decreased upon thermal annealing at temperatures above 700°C, as did the change in resistivity, and 450-nm blue emissions showed maximum intensity at approximately 700°C of thermal annealing.

Từ khóa


Tài liệu tham khảo

1989, Inst. Phys. Conf. Ser., 106, 725

1989, Jpn. J. Appl. Phys., 28, L2112, 10.1143/JJAP.28.L2112

1991, Oyo Buturi, 60, 163

1991, Jpn. J. Appl. Phys., 30, L1705, 10.1143/JJAP.30.L1705

1991, Jpn. J. Appl. Phys., 30, L1708, 10.1143/JJAP.30.L1708

1991, Jpn. J. Appl. Phys., 30, L1998, 10.1143/JJAP.30.L1998

1991, Jpn. J. Appl. Phys., 30, 1620, 10.1143/JJAP.30.1620

1991, Appl. Phys. Lett., 58, 2021, 10.1063/1.105239

1972, J. Electrochem. Soc., 119, 622, 10.1149/1.2404274

Thông tin
Thông tin xuất bản

Japanese Journal of Applied Physics

Tập 31 Số 2B

L139

Thông tin tác giả