APL Materials
SCIE-ISI SCOPUS (2013-2025)
2166-532X
2166-532X
Mỹ
Cơ quản chủ quản: AIP PUBLISHING , American Institute of Physics
Lĩnh vực:
Engineering (miscellaneous)Materials Science (miscellaneous)
Các bài báo tiêu biểu
Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
Tập 1 Số 1 - 2013
Accelerating the discovery of advanced materials is essential for human welfare
and sustainable, clean energy. In this paper, we introduce the Materials Project
(www.materialsproject.org), a core program of the Materials Genome Initiative
that uses high-throughput computing to uncover the properties of all known
inorganic materials. This open dataset can be accessed through multiple channels
for b...
Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry
Tập 2 Số 1 - 2014
We report on the reduction of the thermal conductivity in ultra-thin suspended
Si membranes with high crystalline quality. A series of membranes with
thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman
thermometry, a novel contactless technique for thermal conductivity
determination. A systematic decrease in the thermal conductivity was observed as
reducing the thickness, which is...
Skyrmion devices for memory and logic applications
Tập 9 Số 5 - 2021
Skyrmions have received considerable attention in various studies since the
experimental observation in magnetic materials in 2009. Skyrmions, which are
topological, particle-like localized structures, show significant fundamental
research value in the field of physics and materials and are also regarded as
novel information carriers that have the potential for use in developing
high-density, low-...
Effect of grain size on superelasticity in Fe-Mn-Al-Ni shape memory alloy wire
Tập 1 Số 3 - 2013
Effects of grain size on superelastic properties in Fe-34Mn-15Al-7.5Ni alloy
wires with a ⟨110⟩ fiber-texture were investigated by cyclic tensile tests. It
was confirmed that the critical stress for induced martensitic transformation
and the superelastic strain are functions of relative grain size d/D (d: mean
grain diameter, D: wire diameter), and that the critical stress is proportional
to (1–d/...
Reduced graphene oxide wrapped Cu2O supported on C3N4: An efficient visible light responsive semiconductor photocatalyst
Tập 3 Số 10 - 2015
Herein, Cu2O spheres were prepared and encapsulated with reduced graphene oxide
(rGO). The Cu2O–rGO–C3N4 composite covered the whole solar spectrum with
significant absorption intensity. rGO wrapped Cu2O loading caused a red shift in
the absorption with respect to considering the absorption of bare C3N4. The
photoluminescence study confirms that rGO exploited as an electron transport
layer at the ...
Group III-nitride nanowire structures for photocatalytic hydrogen evolution under visible light irradiation
Tập 3 Số 10 - 2015
The performance of photochemical water splitting over the emerging
nanostructured photocatalysts is often constrained by their surface electronic
properties, which can lead to imbalance in redox reactions, reduced efficiency,
and poor stability. We have investigated the impact of surface charge properties
on the photocatalytic activity of InGaN nanowires. By optimizing the surface
charge propertie...
Nanolabyrinthine ZrAlN thin films by self-organization of interwoven single-crystal cubic and hexagonal phases
Tập 1 Số 2 - 2013
Self-organization on the nanometer scale is a trend in materials research.
Thermodynamic driving forces may, for example, yield chessboard patterns in
metal alloys [Y. Ni and A. G. Khachaturyan, Nature Mater. 8, 410–414
(2009)]10.1038/nmat2431 or nitrides [P. H. Mayrhofer, A. Hörling, L. Karlsson,
J. Sjölén, T. Larsson, and C. Mitterer, Appl. Phys. Lett. 83, 2049
(2003)]10.1063/1.1608464 during sp...
Molecular beam epitaxy of three-dimensional Dirac material Sr3PbO
Tập 4 Số 7 - 2016
A series of anti-perovskites including Sr3PbO are recently predicted to be a
three-dimensional Dirac material with a small mass gap, which may be a
topological crystalline insulator. Here, we report the epitaxial growth of
Sr3PbO thin films on LaAlO3 using molecular beam epitaxy. X-ray diffraction
indicates (001) growth of Sr3PbO, where [110] of Sr3PbO matches [100] of LaAlO3.
Measurements of the ...
Possible experimental realization of a basic Z2 topological semimetal in GaGeTe
Tập 7 Số 12 - 2019
We report experimental and theoretical evidence that GaGeTe is a basic Z2
topological semimetal with three types of charge carriers: bulk-originated
electrons and holes as well as surface state electrons. This electronic
situation is qualitatively similar to the classic 3D topological insulator
Bi2Se3, but important differences account for an unprecedented transport
scenario in GaGeTe. High-resolu...