Group III-nitride nanowire structures for photocatalytic hydrogen evolution under visible light irradiation

APL Materials - Tập 3 Số 10 - 2015
Faqrul A. Chowdhury1, Zetian Mi1, Md Golam Kibria1, Michel L. Trudeau2
1McGill University 1 Department of Electrical and Computer Engineering, , 3480 University Street, Montreal, Québec H3A 0E9, Canada
2Science des Matériaux, IREQ 2 , Hydro-Québec 1800 Blvd. Lionel-Boulet, Varennes, Québec J3X 1S1, Canada

Tóm tắt

The performance of photochemical water splitting over the emerging nanostructured photocatalysts is often constrained by their surface electronic properties, which can lead to imbalance in redox reactions, reduced efficiency, and poor stability. We have investigated the impact of surface charge properties on the photocatalytic activity of InGaN nanowires. By optimizing the surface charge properties through controlled p-type dopant (Mg) incorporation, we have demonstrated an apparent quantum efficiency of ∼17.1% and ∼12.3% for InGaN nanowire arrays under visible light irradiation (400 nm–490 nm) in aqueous methanol and in the overall neutral-pH water splitting reaction, respectively.

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