Possible experimental realization of a basic Z2 topological semimetal in GaGeTe

APL Materials - Tập 7 Số 12 - 2019
Erik Haubold1, Alexander Fedorov2,1, Florian Pielnhofer3,4, I. P. Rusinov5,6, Tatiana V. Menshchikova6, Viola Düppel4, Daniel Friedrich3, Richard Weihrich7, Arno Pfitzner3, Alexander Zeugner8,1, Anna Isaeva8,1, S. Thirupathaiah1, Yevhen Kushnirenko1, E. D. L. Rienks8,1, T. K. Kim9, Е. В. Чулков10,11,5,6, B. Büchner8,1, С. В. Борисенко1
1IFW Dresden 1 , Helmholtzstr. 20, 01069 Dresden, Germany
2HZB Helmholtz-Zentrum Berlin für Materialien und Energie 2 , Albert-Einstein-Str. 15, 12489 Berlin, Germany
3Institut für Anorganische Chemie, Universität Regensburg 4 , 93040 Regensburg, Germany
4Max Planck Institute for Solid State Research 3 , Heisenbergstr. 1, 70569 Stuttgart, Germany
5St. Petersburg State University 6 , Universitetskaya nab. 7/9, 199034 St. Petersburg, Russia
6Tomsk State University 5 , pr. Lenina 36, 634050 Tomsk, Russia
7Universität Augsburg, Institut für Materials Ressource Management 7 , Universitätsstr. 2, 86135 Augsburg, Germany
8Faculty of Physics, TU Dresden 8 , 01062 Dresden, Germany
9Diamond Light Source, Harwell Campus 9 , Didcot OX11 0DE, United Kingdom
10Departamento de Fisica de Materiales, Facultad de Ciencias Quimicas, and Centro de Fisica de Materiales and Materials Physics Center, University of the Basque Country (UPV/EHU) 11 , 20080 San Sebastian/Donostia, Basque Country, Spain
11Donostia International Physics Center 10 , Paseo de Manuel Lardizabal 4, 20018 San Sebastian/Donostia, Basque Country, Spain

Tóm tắt

We report experimental and theoretical evidence that GaGeTe is a basic Z2 topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the classic 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolved photoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiar band inversion at the T-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electron and holelike carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue that peculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost the material’s application potential.

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Tài liệu tham khảo

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Tập 7 Số 12

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