Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

APL Materials - Tập 2 Số 1 - 2014
Emigdio Chávez‐Ángel1,2, J. S. Reparaz1, Jordi Gomis‐Brescó1, Markus R. Wagner1, J. Cuffe3, Bartłomiej Graczykowski1, A. Shchepetov4, Haochuan Jiang5, Mika Prunnila4, Jouni Ahopelto4, F. Alzina1, C. M. Sotomayor Torres1,6
1ICN2–Institut Catala de Nanociencia i Nanotecnologia 1 , Campus UAB, 08193 Bellaterra (Barcelona), Spain
2UAB 2 Department of Physics, , 08193 Bellaterra, Barcelona, Spain
3Massachusetts Institute of Technology 3 Department of Mechanical Engineering, , Cambridge, Massachusetts 02139, USA
4VTT Technical Research Centre of Finland 4 , PO Box 1000, 02044 VTT, Espoo, Finland
5Aalto University School of Science 5 NanoMaterials Group, Department of Applied Physics and Center for New Materials, , P.O. Box 15100, FI-00076 Aalto, Finland
6Institució Catalana de Recerca i Estudis Avançats (ICREA) 6 , 08010 Barcelona, Spain

Tóm tắt

We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.

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See supplementary material at http://dx.doi.org/10.1063/1.4861796 for a detailed description of the calculations. The thickness dependence of the thermal conductivity is described through the Fuchs-Sondheimer model.

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