Molecular beam epitaxy of three-dimensional Dirac material Sr3PbO

APL Materials - Tập 4 Số 7 - 2016
D. Samal1,2,3, H. Nakamura1,2,3, H. Takagi3,4,5
12Department of Physics, University of Tokyo, 113-0033 Tokyo, Japan
23Institute for Functional Matter and Quantum Technologies, University of Stuttgart, 70569 Stuttgart, Germany
3Max Planck Institute for Solid State Research 1 , 70569 Stuttgart, Germany
4University of Stuttgart 3 Institute for Functional Matter and Quantum Technologies, , 70569 Stuttgart, Germany
5University of Tokyo 2 Department of Physics, , 113-0033 Tokyo, Japan

Tóm tắt

A series of anti-perovskites including Sr3PbO are recently predicted to be a three-dimensional Dirac material with a small mass gap, which may be a topological crystalline insulator. Here, we report the epitaxial growth of Sr3PbO thin films on LaAlO3 using molecular beam epitaxy. X-ray diffraction indicates (001) growth of Sr3PbO, where [110] of Sr3PbO matches [100] of LaAlO3. Measurements of the Sr3PbO films with parylene/Al capping layers reveal a metallic conduction with p-type carrier density of ∼1020 cm−3. The successful growth of high quality Sr3PbO film is an important step for the exploration of its unique topological properties.

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