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Các bài báo tiêu biểu
300°C GaN/AlGaN Heterojunction Bipolar TransistorA GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2 /Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250°C), the device shows improved gain. Future efforts should focus on methods for reducing base resistance, which are briefly summarized.
Tập 3 - 1998
Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase EpitaxyGaN/sapphire layers have been grown by Metal Organic Vapour Phase Epitaxy (MOVPE). An amorphous silicon nitride layer is deposited using a SiH4 /NH3 mixture prior to the growth of the low temperature GaN buffer layer. Such a process induces a 3D nucleation at the early beginning of the growth, resulting in a kind of maskless ELO process with random ... ... hiện toàn bộ
Tập 7 - 2002
Review of Structure of Bare and Adsorbate-Covered GaN(0001) SurfacesA review of surface structures of bare and adsorbate-covered GaN (0001) and (000 hiện toàn bộ
- 2002
The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETsWe have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure field-effect transistors. The results show that the thermal boundary resistance at the device layer interfaces ... ... hiện toàn bộ
- 2003
Novel approach to simulation of group-III nitrides growth by MOVPERecent studies revealed specific features of chemical processes occurring on the surface of growing group-III nitrides – extremely low sticking probability of molecular nitrogen, low sticking coefficient and incomplete decomposition of ammonia frequently used as the nitrogen precursor. These features (kinetic by nature) result in the growth process going on under conditions remarkably devi... ... hiện toàn bộ
- 1999
Solar-Blind AlGaN Heterostructure PhotodiodesA backside-illuminated solar-blind UV detector based on an AlGaN p-i-n heterostructure has been successfully synthesized, fabricated and tested. The p-i-n photodiode structure consists of a 1.0 μm n-type Al0.64 Ga0.36 N:Si layer grown by MOVPE onto a low temperature AlN buffer layer on a polished sapphire substrate. On top of this base layer is a 0.2... ... hiện toàn bộ
Tập 5 Số 1 - 2000
Preparation of Sapphire for High Quality III-Nitride GrowthWe developed a unique preparation technique to eliminate surface damage on the c-plane of sapphire and render it atomically flat. AFM images of c-plane sapphire annealed at 1380 °C for 1hour show terrace-like features with about 0.2 μm long terraces. The GaN layers grown by MBE on annealed sapphire have [0 0 2] symmetric and [1 0 4] asymmetric full width at half maximum (FWHM) of about 60 ... ... hiện toàn bộ
- 2000
GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase EpitaxyThe dependence of the In-incorporation efficiency and the optical properties of MOVPE-grown GaInN/GaN-heterostructures on various growth parameters has been investigated. A significant improvement of the In-incorporation rate could be obtained by increasing the growth rate and reducing the H2 -partial pressure in the MOVPE reactor. However, GaInN layers with a high In-c... ... hiện toàn bộ
Tập 2 - 1997
Development of High Power Green Light Emitting Diode ChipsThe development of high emission power green light emitting diodes chips using GaInN/GaN multi quantum well heterostructures on sapphire substrate in our group is being reviewed. We analyze the electronic bandstructure in highly polarized GaInN/GaN quantum wells to identify the appropriate
device structures. We describe the optimization of the epitaxial growth for highest device performanc... ... hiện toàn bộ
Tập 10 - 2005
Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layersThe composition dependence of emission energy of pseudomorphically strained InGaN layers with In content up to 0.2 is obtained. It is found that the main reason of “scatter” in published values of the InGaN bowing parameter is the uncertainty of the Poisson's ratio determination. It is shown that after recalculation to the same Poisson's ratio, most published data yield essentially the sam... ... hiện toàn bộ
Tập 6 - 2001