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SCOPUS (1996-2005)
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Các bài báo tiêu biểu
300°C GaN/AlGaN Heterojunction Bipolar Transistor
Tập 3 - 1998
A GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar
dry etching for mesa formation. As the hole concentration increases due to more
efficient ionization of the Mg acceptors at elevated temperatures (> 250°C), the
device shows improved gain. Future efforts should focus on methods for reducing
base resistance, which are briefly summarized.
Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy
Tập 7 - 2002
GaN/sapphire layers have been grown by Metal Organic Vapour Phase Epitaxy
(MOVPE). An amorphous silicon nitride layer is deposited using a SiH4/NH3
mixture prior to the growth of the low temperature GaN buffer layer. Such a
process induces a 3D nucleation at the early beginning of the growth, resulting
in a kind of maskless ELO process with random opening sizes. This produces a
significant decreas...
Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
- 2002
A review of surface structures of bare and adsorbate-covered GaN (0001) and
(000) surfaces is presented, including results for In, Mg, Si, and H adsorbates.
Emphasis is given to direct determination of surface structure employing
experimental techniques such as scanning tunneling microscopy, electron
diffraction, and Auger electron spectroscopy, and utilizing first principles
computations of the t...
The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
- 2003
We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire
and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained
values were then used to examine the effect of the thermal boundary resistance
on heat diffusion in AlGaN/GaN heterostructure field-effect transistors. The
results show that the thermal boundary resistance at the device layer interfaces
can stro...
Novel approach to simulation of group-III nitrides growth by MOVPE
- 1999
Recent studies revealed specific features of chemical processes occurring on the
surface of growing group-III nitrides – extremely low sticking probability of
molecular nitrogen, low sticking coefficient and incomplete decomposition of
ammonia frequently used as the nitrogen precursor. These features (kinetic by
nature) result in the growth process going on under conditions remarkably
deviated fro...
Solar-Blind AlGaN Heterostructure Photodiodes
Tập 5 Số 1 - 2000
A backside-illuminated solar-blind UV detector based on an AlGaN p-i-n
heterostructure has been successfully synthesized, fabricated and tested. The
p-i-n photodiode structure consists of a 1.0 μm n-type Al0.64Ga0.36N:Si layer
grown by MOVPE onto a low temperature AlN buffer layer on a polished sapphire
substrate. On top of this base layer is a 0.2 μm undoped Al0.47Ga0.53N active
layer and a 0.5 μ...
Preparation of Sapphire for High Quality III-Nitride Growth
- 2000
We developed a unique preparation technique to eliminate surface damage on the
c-plane of sapphire and render it atomically flat. AFM images of c-plane
sapphire annealed at 1380 °C for 1hour show terrace-like features with about 0.2
μm long terraces. The GaN layers grown by MBE on annealed sapphire have [0 0 2]
symmetric and [1 0 4] asymmetric full width at half maximum (FWHM) of about 60
and 132 ...
GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
Tập 2 - 1997
The dependence of the In-incorporation efficiency and the optical properties of
MOVPE-grown GaInN/GaN-heterostructures on various growth parameters has been
investigated. A significant improvement of the In-incorporation rate could be
obtained by increasing the growth rate and reducing the H2-partial pressure in
the MOVPE reactor. However, GaInN layers with a high In-content typically show
an addi...
Development of High Power Green Light Emitting Diode Chips
Tập 10 - 2005
The development of high emission power green light emitting diodes chips using
GaInN/GaN multi quantum well heterostructures on sapphire substrate in our group
is being reviewed. We analyze the electronic bandstructure in highly polarized
GaInN/GaN quantum wells to identify the appropriate device structures. We
describe the optimization of the epitaxial growth for highest device
performance. Apply...
Influence of Poisson's ratio uncertainty on calculations of the bowing parameter for strained InGaN layers
Tập 6 - 2001
The composition dependence of emission energy of pseudomorphically strained
InGaN layers with In content up to 0.2 is obtained. It is found that the main
reason of “scatter” in published values of the InGaN bowing parameter is the
uncertainty of the Poisson's ratio determination. It is shown that after
recalculation to the same Poisson's ratio, most published data yield essentially
the same result...