Preparation of Sapphire for High Quality III-Nitride Growth

Springer Science and Business Media LLC - 2000
Jia Cui1, Andrew Sun1, M. Reshichkov1, Feng Yun1, A. A. Baski1, H. Morkoç̌1
1Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, USA

Tóm tắt

We developed a unique preparation technique to eliminate surface damage on the c-plane of sapphire and render it atomically flat. AFM images of c-plane sapphire annealed at 1380 °C for 1hour show terrace-like features with about 0.2 μm long terraces. The GaN layers grown by MBE on annealed sapphire have [0 0 2] symmetric and [1 0 4] asymmetric full width at half maximum (FWHM) of about 60 and 132 arcsec, respectively. This compares with 408 and 600 arcsec, respectively, for GaN grown on sapphire having gone through conventional chemical cleaning.

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Tài liệu tham khảo

10.1063/1.109775

[6] Morkoç Hadis , Carlo Aldo Di and Cingolani R. , “GaN-Based Modulation Doped FETs and UV Detectors”, Condensed Matter News, Ed. Bernier Patrick , in press

10.1557/PROC-468-193

10.1063/1.359474

10.1063/1.119366

[1] Morkoç H. : “Nitride Semiconductors and Devices”, Springer, ISBN 3-540-64038-x, (1999)

10.1063/1.358463

10.1016/S0079-6727(96)00002-X

[11] Morkoç H. , unpublished

10.1063/1.357872

10.1143/JJAP.35.L217

[a] for a recent review, see [6].

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