The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

10.1109/16.906439

10.1109/55.661174

10.1063/1.1571982

10.1109/22.780388

10.1109/55.974795

Filippov, 2003, “Self-Heating Effects in GaN/AlGaN Heterostructure Field-Effect Transistors and Device Structure Optimization”, Proceed of Nanotech 2003, 3, 333

10.1063/1.1427153

[16] Bougrov V. , Levinshtein M. , Rumyantsev S. L. , Zubrilov A. . Chapters 1 (Gallium Nitride) in: “Properties of Advanced Semiconductor Materials: GaN,AIN, InN, BN, SiC, SiGe”, John Wiley & Sons, Inc. NY-Chichester-Weinheim-Brisbane-Singapore-Toronto, 2001, ISBN 0-471-35827-4

10.1049/el:20000680

10.1063/1.1419239

10.1063/1.98939

[17] Goldberg Yu. A. , Levinshtein M. , Rumyantsev S. L. . Chapters 2 (Aluminum Nitride) in “Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe” John Wiley & Sons, Inc. NY-Chichester-Weinheim-Brisbane-Singapore-Toronto, 2001, ISBN 0-471-35827-4

10.1063/1.1497704

10.1063/1.113625

10.1063/1.1505995

Wu, 1999, “GaN-Based FETs for Microwave Power Amplification”, IEICE Trans. Electron., 1895

[18] Goldberg Yu. A. , Levinshtein M. , Rumyantsev S. L. . Chapters 5 (Silicon Carbide) in “Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe” John Wiley & Sons, Inc. NY-Chichester-Weinheim-Brisbane-Singapore-Toronto, 2001, ISBN 0-471-35827-4

10.1063/1.126852

10.1109/55.735751