300°C GaN/AlGaN Heterojunction Bipolar Transistor

Springer Science and Business Media LLC - Tập 3 - 1998
F. Ren1, C. R. Abernathy2, J. M. Van Hove3, P. P. Chow3, R. Hickman3, JJ Klaasen3, R. F. Kopf4, Hyun Cho2, K. B. Jung2, J. R. La Roche1, R. G. Wilson5, Jung Han6, R. J. Shul6, Albert G. Baca6, S. J. Pearton2
1Department of Chemical Engineering, University of Florida, USA
2Department of Materials Science and Engineering, University of Florida, USA
3Blue Lotus Micro Devices, an SVT Associates company, USA
4Bell Laboratories, Lucent Technologies, USA
5Charles Evans and Associates, USA
6Sandia National Laboratories, New Mexico, USA

Tóm tắt

A GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250°C), the device shows improved gain. Future efforts should focus on methods for reducing base resistance, which are briefly summarized.

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Tài liệu tham khảo

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Springer Science and Business Media LLC

Tập 3

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