Development of High Power Green Light Emitting Diode Chips

Springer Science and Business Media LLC - Tập 10 - 2005
Christian Wetzel1,2, T. Detchprobhm1,2
1Department of Physics, Applied Physics and Astronomy, USA
2Future Chips Constellation, USA

Tóm tắt

The development of high emission power green light emitting diodes chips using GaInN/GaN multi quantum well heterostructures on sapphire substrate in our group is being reviewed. We analyze the electronic bandstructure in highly polarized GaInN/GaN quantum wells to identify the appropriate device structures. We describe the optimization of the epitaxial growth for highest device performance. Applying several optimization schemes, we find that lateral smoothness and homogeneity of the active region as characterized by atomic force microscopy is a most telling character of high yield, high output power devices emitting near 525 nm. In un-encapsulated epi-up mounted (400 μm)2 die we achieve 2.5 mW at 20 mA at 525 nm. We describe die performance, wafer yield, and process stability, and reproducibility for our production-scale implementation of this green LED die process.

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Springer Science and Business Media LLC

Tập 10

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