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Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
Springer Science and Business Media LLC - - 1996
A theoretical model which accounts for a physisorption precursor of molecular nitrogen is proposed for the analysis of group III-nitride growth by molecular beam epitaxy (MBE). The kinetics of nitrogen evaporation are found to be an essential factor influencing the MBE growth process of group III-nitrides. The high thermal stability of nitrides is explained to be related to the desorption kinetics......
Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
Springer Science and Business Media LLC - Tập 1 - Trang 1-5 - 1996
Optically detected electron nuclear double resonance (ODENDOR) was measured in the 2.2 eV ‘yellow’ luminescence band associated with the residual donor in n-type undoped GaN. The ODENDOR lines are due to gallium and show a quadrupole splitting which can be described with an axial tensor. The quadrupole parameter was estimated to be q(69Ga) = 1/2 Qzz = 0.22 MHz. A hyperfine interaction for 69Ga of ......
Interface Effects on the Persistent Photoconductivity in Thin GaN and AlGaN Films
Springer Science and Business Media LLC - Tập 4 - Trang 520-525 - 2020
Thin films of GaN and its alloy AlGaN are investigated with respect to their properties of the persistent photoconductivity (PPC). In this work, we show that the film-substrate interface plays an important role for the metastable electrical effect. Strongly absorbed bandgap light causes an increase of photoconductivity which is about one order of magnitude higher when the sample is illuminated fro......
Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
Springer Science and Business Media LLC - Tập 4 - Trang 197-202 - 2020
The crystal structure and surface morphology of hydride vapour phase epitaxy grown thick (12-105 μm) GaN layers have been investigated as a function of growth rate using several structure sensitive techniques like atomic force microscopy (AFM), x-ray diffraction (XRD) in ω-2θ and ω-rocking curve measurements as well as low temperature photoluminescence (PL). PL and XRD measurements reveal rather n......
Characterization of Be-Implanted GaN Annealed at High Temperatures
Springer Science and Business Media LLC - Tập 4 - Trang 203-208 - 2020
Single crystalline (0001) gallium nitride layers were implanted with beryllium and subsequently annealed within the range of 300-1100 °C for 10-60 minutes under a flux of atomic nitrogen obtained using a rf plasma source. The nitrogen flux protected the GaN surface from decomposition in vacuum at high temperatures. SIMS measurements revealed that no long range diffusion of the implanted Be occurre......
Novel approach to simulation of group-III nitrides growth by MOVPERecent studies revealed specific features of chemical processes occurring on the surface of growing group-III nitrides – extremely low sticking probability of molecular nitrogen, low sticking coefficient and incomplete decomposition of ammonia frequently used as the nitrogen precursor. These features (kinetic by nature) result in the growth process going on under conditions remarkably devi... ...
Springer Science and Business Media LLC - - 1999
A TEM study of GaN grown by ELO on (0001) 6H-SiC
Springer Science and Business Media LLC - Tập 5 - Trang 76-82 - 2020
The misfit between GaN and 6H-SiC is 3.5 % instead of 16 % with sapphire, the epitaxial layers have similar densities of defects on both substrates. Moreover, the lattice mismatch between AlN and 6H-SiC is only 1%. Therefore, epitaxial layer overgrowth (ELO) of GaN on AlN/6H-SiC could be a route to further improve the quality of epitaxial layers. AlN has been grown by Halide Vapour Phase Epitaxy (......
Theory of the gain characteristics of InGaN/AlGaN QD Lasers
Springer Science and Business Media LLC - Tập 4 - Trang 721-726 - 2020
We present a theoretical analysis of the gain characteristics of InGaN/AlGaN quantum dot (QD) lasers. We calculate the elastic strain distribution caused by the lattice mismatch between the QD and the barrier using an original method which takes into account the hexagonal symmetry of the structure’s elastic properties. The method is based on an analytical derivation of the Fourier transform of the......
Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
Springer Science and Business Media LLC - Tập 7 - Trang 1-6 - 2020
Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) substrates with no miscut and with 3.5° miscuts in both the
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MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics
Springer Science and Business Media LLC - Tập 5 - Trang 412-424 - 2020
We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm......
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