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Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
Springer Science and Business Media LLC - Tập 1 - Trang 1-5 - 1996
Optically detected electron nuclear double resonance (ODENDOR) was measured in the 2.2 eV ‘yellow’ luminescence band associated with the residual donor in n-type undoped GaN. The ODENDOR lines are due to gallium and show a quadrupole splitting which can be described with an axial tensor. The quadrupole parameter was estimated to be q(69Ga) = 1/2 Qzz = 0.22 MHz. A hyperfine interaction for 69Ga of ......
Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
Springer Science and Business Media LLC - Tập 4 - Trang 197-202 - 2020
The crystal structure and surface morphology of hydride vapour phase epitaxy grown thick (12-105 μm) GaN layers have been investigated as a function of growth rate using several structure sensitive techniques like atomic force microscopy (AFM), x-ray diffraction (XRD) in ω-2θ and ω-rocking curve measurements as well as low temperature photoluminescence (PL). PL and XRD measurements reveal rather n......
Characterization of Be-Implanted GaN Annealed at High Temperatures
Springer Science and Business Media LLC - Tập 4 - Trang 203-208 - 2020
Single crystalline (0001) gallium nitride layers were implanted with beryllium and subsequently annealed within the range of 300-1100 °C for 10-60 minutes under a flux of atomic nitrogen obtained using a rf plasma source. The nitrogen flux protected the GaN surface from decomposition in vacuum at high temperatures. SIMS measurements revealed that no long range diffusion of the implanted Be occurre......
Novel approach to simulation of group-III nitrides growth by MOVPERecent studies revealed specific features of chemical processes occurring on the surface of growing group-III nitrides – extremely low sticking probability of molecular nitrogen, low sticking coefficient and incomplete decomposition of ammonia frequently used as the nitrogen precursor. These features (kinetic by nature) result in the growth process going on under conditions remarkably devi... ...
Springer Science and Business Media LLC - - 1999
Zirconium Mediated Hydrogen Outdiffusion From p-GaN
Springer Science and Business Media LLC - Tập 5 - Trang 570-576 - 2020
We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individua......
Phase Separation in wurtzite In1−x−yGaxAlyN
Springer Science and Business Media LLC - Tập 3 - Trang 1-5 - 1998
The wurtzite structure In1−x−yGaxAlyN quaternary system is studied with respect to the unstable region in mixing. The composition in the unstable region is calculated from the free energy of mixing by using the strictly regular solution model. The interaction parameter used in this calculation is obtained by using the delta-lattice-parameter method. Here, the proportionality constant connecting th......
Nonlinear Optical Characterization of GaN Layers Grown by MOCVD on Sapphire
Springer Science and Business Media LLC - Tập 5 - Trang 768-774 - 2020
Optical second and third harmonic generation measurements were carried out on GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The measured d33 is 33 times the d11 of quartz. The angular dependence of second-harmonic intensity as well as the measured ratios d33/d15 = −2.02 and d33/d31 =−2.03 confirm the wurzite structure of the studied GaN layers with the ......
Homo-epitaxial growth on misoriented GaN substrates by MOCVD
Springer Science and Business Media LLC - Tập 5 - Trang 425-431 - 2020
The N-side of GaN single crystals with off-angle orientations of 0°, 2°, and 4° towards the
$$\left[ {10\bar 10} \right]$$
direction was used as a substrate for homo-epitaxial MOCVD growth. The highest misorientation resulted in a reduction of the density of grown hillocks by almost two orders of magnitude as comp......
GaN Decomposition in Ammonia
Springer Science and Business Media LLC - Tập 5 - Trang 273-279 - 2020
GaN decomposition is studied as a function of pressure and temperature in mixed NH3 and H2 flows more characteristic of the MOVPE growth environment. As NH3 is substituted for the 6 SLM H2 flow, the GaN decomposition rate at 1000 °C is reduced from 1×1016 cm−2 s−1 (i.e. 9 monolayers/s) in pure H2 to a minimum of 1×1014 cm−2 s−1 at an NH3 density of 1×1019 cm−3. Further increases of the NH3 density......
UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
Springer Science and Business Media LLC - Tập 5 - Trang 1-12 - 2020
An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undoped and then p-type GaN layers deposited by metal organic vapor phase epitaxy. Double-side polished sapphire wafers serve as transparent substrates. St......
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