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Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
Springer Science and Business Media LLC - - 1996
M.V. Averyanova, S.Yu. Karpov, Yu.N. Makarov, I.N. Przhevalskii, M.S. Ramm, R.A. Talalaev
A theoretical model which accounts for a physisorption precursor of molecular nitrogen is proposed for the analysis of group III-nitride growth by molecular beam epitaxy (MBE). The kinetics of nitrogen evaporation are found to be an essential factor influencing the MBE growth process of group III-nitrides. The high thermal stability of nitrides is explained to be related to the desorption kinetics... hiện toàn bộ
Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
Springer Science and Business Media LLC - Tập 1 - Trang 1-5 - 1996
F. K. Koschnick, K. Michael, J.-M. Spaeth, B. Beaumont, Pierre Gibart
Optically detected electron nuclear double resonance (ODENDOR) was measured in the 2.2 eV ‘yellow’ luminescence band associated with the residual donor in n-type undoped GaN. The ODENDOR lines are due to gallium and show a quadrupole splitting which can be described with an axial tensor. The quadrupole parameter was estimated to be q(69Ga) = 1/2 Qzz = 0.22 MHz. A hyperfine interaction for 69Ga of ... hiện toàn bộ
Interface Effects on the Persistent Photoconductivity in Thin GaN and AlGaN Films
Springer Science and Business Media LLC - Tập 4 - Trang 520-525 - 2020
O. P. Seifert, O. Kirfel, M. Munzel, M. T. Hirsch, J. Parisi, M. Kelly, O. Ambacher, M. Stutzmann
Thin films of GaN and its alloy AlGaN are investigated with respect to their properties of the persistent photoconductivity (PPC). In this work, we show that the film-substrate interface plays an important role for the metastable electrical effect. Strongly absorbed bandgap light causes an increase of photoconductivity which is about one order of magnitude higher when the sample is illuminated fro... hiện toàn bộ
Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
Springer Science and Business Media LLC - - 1998
M. Godlewski, Ewa M. Goldys, Matthew Philips, J. P. Bergman, B. Ḿonemar, Róbert Langer, A. Barski
Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.
A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications
Springer Science and Business Media LLC - Tập 4 - Trang 594-599 - 2020
M.A.L. Johnson, Zhonghai Yu, J.D. Brown, F.A. Koeck, N.A. El-Masry, H.S. Kong, J.A. Edmond, J.W. Cook, J.F. Schetzina
A systematic study of the growth and doping of GaN, AlGaN, and InGaN by both molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) has been performed. Critical differences between the resulting epitaxy are observed in the p-type doping using magnesium as the acceptor species. MBE growth, using rf-plasma sources to generate the active nitrogen species for growth, has been used ... hiện toàn bộ
Dry and Wet Etching for Group III – Nitrides
Springer Science and Business Media LLC - - 1999
I. Adesida, C. Youtsey, A. T. Ping, Farid Khan, L. T. Romano, G. E. Bulman
The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and ... hiện toàn bộ
Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy
Springer Science and Business Media LLC - Tập 4 - Trang 197-202 - 2020
T. Paskova, E.B. Svedberg, L.D. Madsen, R. Yakimova, I.G. Ivanov, A. Henry, B. Monemar
The crystal structure and surface morphology of hydride vapour phase epitaxy grown thick (12-105 μm) GaN layers have been investigated as a function of growth rate using several structure sensitive techniques like atomic force microscopy (AFM), x-ray diffraction (XRD) in ω-2θ and ω-rocking curve measurements as well as low temperature photoluminescence (PL). PL and XRD measurements reveal rather n... hiện toàn bộ
High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes
Springer Science and Business Media LLC - Tập 8 - Trang 1-7 - 2003
Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay
We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al0 2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices e... hiện toàn bộ
Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er
Springer Science and Business Media LLC - Tập 5 Số S1 - Trang 810-816 - 2000
M. E. Overberg, C. R. Abernathy, S. J. Pearton, R. G. Wilson, J. M. Zavada
The surface morphology and the room temperature 1.54 µm photoluminescence (PL) intensity from GaN:Er grown by gas source molecular beam epitaxy have been investigated as a function of C concentration as introduced by CBr4. Similar to previous results with increasing Er level, increasing the C concentration initially improved the surface smoothness as measured by atomic force microscopy (AFM) and s... hiện toàn bộ
Characteristic Temperature Estimation for GaN-Based Lasers
Springer Science and Business Media LLC - Tập 4 Số S1 - Trang 548-553 - 1999
Toshio Honda, Hideo Kawanishi, Takahiro Sakaguchi, Fumio Koyama, Kenichi Iga
We have estimated the characteristic temperature T0 of GaN-based vertical-cavity surface-emitting lasers. The density matrix theory including intraband relaxation broadening has been taken into account. The estimated T0 is about 300 K, which suggests a good temperature characteristic in GaN-based lasers.
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