1Department of Electronic Engineering, Kohgakuin University, 2665-1 Nakano-machi, Hachiohji-shi, Tokyo 192-0015, Japan
2Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Tóm tắt
We have estimated the characteristic temperature T0 of GaN-based vertical-cavity surface-emitting lasers. The density matrix theory including intraband relaxation broadening has been taken into account. The estimated T0 is about 300 K, which suggests a good temperature characteristic in GaN-based lasers.
Từ khóa
Tài liệu tham khảo
10.1143/JJAP.36.L1059
Nakamura, 1996, 43rd Spring Meet. Jpn. Soc. Appl. Phys. and Related Soc.
