Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er

Springer Science and Business Media LLC - Tập 5 Số S1 - Trang 810-816 - 2000
M. E. Overberg1, C. R. Abernathy1, S. J. Pearton2, R. G. Wilson3, J. M. Zavada4
1Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
2Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA
3Consultant, Stevenson Ranch, CA 91381, USA
4U. S. Army European Research Office, London, NW1 5 TH, UK

Tóm tắt

The surface morphology and the room temperature 1.54 µm photoluminescence (PL) intensity from GaN:Er grown by gas source molecular beam epitaxy have been investigated as a function of C concentration as introduced by CBr4. Similar to previous results with increasing Er level, increasing the C concentration initially improved the surface smoothness as measured by atomic force microscopy (AFM) and scanning electron microscopy (SEM), with RMS roughness improving by a factor of seven over undoped GaN. The PL also improved dramatically. However, the highest amounts of C investigated produced a decrease in the PL as well as a roughening of the film surface. These effects indicate that the GaN:Er had reached its C solubility limit, producing an increased amount of defect induced nonradiative recombination.

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Tài liệu tham khảo

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Overberg, 1999, Proc. of the State-of-the-Art Program on Comp. Semi. XXX, Electrochem. Soc. Proc., 99, 195

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Springer Science and Business Media LLC

Tập 5 Số S1

810-816

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