Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

Springer Science and Business Media LLC - 1998
M. Godlewski1, Ewa M. Goldys2, Matthew Philips3, J. P. Bergman4, B. Ḿonemar4, Róbert Langer5, A. Barski5
1Institute of Physics Polish Academy of Sciences, Poland
2Semiconductor Science & Technology Laboratory, Macquarie University, Australia
3Microstructural Analysis Unit, University of Technology, Australia
4Department of Physics and Measurement Technology, Linköping University, Sweden
5CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée/SP2M, France

Tóm tắt

Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.

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Tài liệu tham khảo

10.1016/S0921-5107(96)01712-6

[13] Godlewski M. , Goldys E. M. , Phillips M. R. , Langer R. , Barski A. , unpublished results

Zhonghai, 1998, MRS Internet J. Nitride Semicond. Res., 3, 6, 10.1557/S1092578300000788

10.1103/PhysRevB.53.1881

10.1063/1.118174

10.1103/PhysRevB.52.8082

10.1063/1.118322

10.1103/PhysRevB.50.8433

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10.1016/S0921-5107(97)00147-5

10.1016/S0921-5107(96)01879-X

10.1063/1.358862

10.1063/1.119344

[14] Tansley T. L. , Goldys E. M. , Godlewski M. , Zhou B. , Zuo H. Y. , in GaN and Related Materials, ed. Pearton S. , Gordon and Breach Publishers, 1997, p. 233

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