High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes

Springer Science and Business Media LLC - Tập 8 - Trang 1-7 - 2003
Necmi Biyikli1, Tolga Kartaloglu1, Orhan Aytur1, Ibrahim Kimukin2, Ekmel Ozbay2
1Dept. of Electrical and Electronics Engineering, Bilkent University, Turkey
2Dept. of Physics, Bilkent University, Turkey

Tóm tắt

We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al0 2Ga0.8N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

Tài liệu tham khảo

J. C. Carrano, T. Li, P A. Grudowski, R. D. Dupuis, J. C. Campbell, IEEE Circuits & Devices Mag. 15, 15 (1999). M. Razeghi, A. Rogalski, J. Appl. Phys. 79, 7433–7473 (1996). E. Monroy, F. Calle, J. L. Pau, F. J. Sanchez, E. Munoz, F. Omnes, B. Beaumont, P. Gibart, J. Appl. Phys. 88, 2081 (2000). S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan, Appl. Phys. Lett. 79, 866 (2001). N. Biyikli, T. Kartaloglu, O. Aytur, I. Kimukin, E. Ozbay, Appl. Phys. Lett. 79, 2838 (2001). N. Biyikli, O. Aytur, I. Kimukin, T. Tut, E. Ozbay, Appl. Phys. Lett. 81, 3272 (2002). B. Yang, D. J. H. Lambert, T. Li, C. J. Collins, M. M. Wong, U. Chowdhury, R. D. Dupuis, J. C. Campbell, Electron. Lett. 36, 1866 (2000). C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu, J. F. Chen, IEEE Photonics Technol. Lett. 13, 848 (2001). Sangwoo Seo, K. K. Lee, Sangbeom Kang, S. Huang, William A. Doolittle, N. M. Jokerst, A. S. Brown, M. A. Brooke, IEEE Photonics Technol. Lett. 14, 185 (2002). E. L. Tarsa, P. Kozodoy, J. Ibbetson, B. P. Keller, Appl. Phys. Lett. 77, 316 (2000). C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, J. C. Campbell, Appl. Phys. Lett. 80, 3754 (2002). J. C. Carrano, D. J. H. Lambert, C. J. Eiting, C. J. Collins, T. Li, S. Wang, B. Yang, A. L. Beck, R. D. Dupuis, J. C. Campbell, Appl. Phys. Lett. 76, 924 (2000). M. S. Unlu, S. Strite, J. Appl. Phys. 78, 607 (1995). E. Ozbay, I. Kimukin, N. Biyikli, O. Aytur, M. Gokkavas, G. Ulu, M. S. Unlu, R. P. Mirin, K. A. Bertness, D. H. Christensen, Appl. Phys. Lett. 74, 1072 (1999). N. Biyikli, I. Kimukin, O. Aytur, M. Gokkavas, M. S. Unlu, E. Ozbay, IEEE Photonics Technol. Lett. 13, 705 (2001). I. Kimukin, N. Biyikli, B. Butun, O. Aytur, M. S. Unlu, E. Ozbay, IEEE Photonics Technol. Lett. 14, 366 (2002). K. Kishino, M. Yonemaru, A. Kikuchi, Toyoura, Phys. Stat. Sol. A 188, 321 (2001). Necmi Biyikli, Tolga Kartaloglu, Orhan Aytur, Ibrahim Kimukin, Ekmel Ozbay, MRS Internet J. Nitride Semicond. Res. 8, 2 (2003). W. A. Wohlmuth, J. W. Seo, P. Fay, C. Caneau, I. Adesida, IEEE Photonics Technol. Lett. 9, 1388 (1997).