Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Springer Science and Business Media LLC - Tập 7 - 2002
Éric Frayssinet1, B. Beaumont1, J. P. Faurie1, P. Gibart1, Zsolt Makkai2, B. Pécz2, Pierre Lefèbvre3, Pierre Valvin3
1Lumilog, 2720, Chemin de Saint Bernard, Les Moulins I, 06220, Vallauris, France
2Research Institute for Technical Physics and Matl. Sci., H-1525, Budapest, PO Box 49, Hungary
3Groupe d’Etude des Semiconducteurs, GES-CNRS, France

Tóm tắt

GaN/sapphire layers have been grown by Metal Organic Vapour Phase Epitaxy (MOVPE). An amorphous silicon nitride layer is deposited using a SiH4/NH3 mixture prior to the growth of the low temperature GaN buffer layer. Such a process induces a 3D nucleation at the early beginning of the growth, resulting in a kind of maskless ELO process with random opening sizes. This produces a significant decrease of the threading dislocation (TD) density compared to the best GaN/sapphire templates. Ultra Low Dislocation density (ULD) GaN layers were obtained with TD density as low as 7×107cm−2 as measured by atomic force microscopy (AFM), cathodoluminescence and transmission electron microscopy (TEM). Time-resolved photoluminescence experiments show that the lifetime of the A free exciton is principally limited by capture onto residual donors, similar to the situation for nearly dislocation-free homoepitaxial layers.

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