COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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Waveguiding in InGaN/GaN/AlGaN blue laser structures
- Trang 438-442
Symmetric InGaN/GaN/AlGaN conventional blue laser waveguides are analyzed. It is shown that due to the limited thickness of the confinement layers, the confinement factor in the active region and the modal absorption are considerably influenced by the substrate and GaN buffer layers. These phenomena are due to the coupling of the light outside of the active region in the substrate and buffer layer......
#Gallium nitride #Aluminum gallium nitride #Buffer layers #Waveguide lasers #Optical waveguides #Absorption #Optical coupling #Resonance #Silicon carbide #Laser modes
Novel semiconductor materials and saturable absorber mirrors for sub-10-fs pulse generation
- Trang 503-510
We report on the fabrication of novel ultrabroadband AlGaAs/CaF/sub 2/ semiconductor saturable absorber mirrors (SESAMs) for sub-10-fs pulse generation. AlGaAs/CaF/sub 2/ Bragg mirrors provide high reflection bandwidths covering the whole gain spectrum of Ti:sapphire lasers. GaAs layers epitaxially grown on CaF/sub 2/ win be shown to be an excellent choice for the operation as saturable absorber w......
#Semiconductor materials #Mirrors #Pulse generation #Gallium arsenide #Optical device fabrication #Optical reflection #Bandwidth #Semiconductor lasers #Laser mode locking #Optical pulse generation
Charge trapping centres in /spl gamma/-irradiated Gallium Nitride grown by MOCVD
- Trang 332-335
Deep-level transient capacitance measurements (DLTS) were performed on Schottky diodes fabricated on undoped MOCVD-grown GaN epilayers before and after exposure to different doses of /sup 60/Co gamma-irradiation. The DLTS measurements were performed from 77 to 300 K, and the samples exposed to accumulated doses of 200, 500 and 1000 krad(Si). Three deep-levels were found in the sample prior to irra......
#MOCVD #Gallium nitride #Schottky diodes #Semiconductor materials #Ionizing radiation #Capacitance measurement #Electron traps #Australia #Breakdown voltage #Nitrogen
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices (Cat. No.00EX466)
- Trang i - 2000
Presents the front cover of the proceedings record.
High-linearity and variable gate-voltage swing dual-gate In/sub 0.5/Ga/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As pseudomorphic high electron mobility transistors
- Trang 226-229
InGaP/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) fabricated using single-gate and dual-gate methodologies have been characterized with special emphasis to precisely control the device linearity and the gate-voltage swing. The key features of the proposed PHEMT profile are characterized in a composite channel by using a GaAs delta sheet and an undoped InGaAs layer. The gate vo......
#PHEMTs #Indium gallium arsenide #Voltage #Electron mobility #HEMTs #MODFETs #Electric variables control #Linearity #Gallium arsenide #Transconductance
Quantum dots and photonic microcavities: properties and optoelectronic device applications
- Trang 17-24
The properties of quantum dot intersubband lasers and the unique carrier dynamics in the quantum dots that lead to the realization of these long wavelength devices are described. Photons also display unique properties when confined in a cavity whose size is of the order of the wavelength. The properties of a unique electroluminescent light emitter, in which the microcavity is a single defect in a ......
#Quantum dots #US Department of Transportation #Microcavities #Quantum dot lasers #Spontaneous emission #Carrier confinement #Optical materials #Light emitting diodes #Semiconductor lasers #Application software
Modelling of device structure effects in backside illuminated CMOS compatible photodiodes
- Trang 399-402
A backside illuminated CMOS photodiode consisting of an n+ (source implant) emitter and P-substrate base has been numerically simulated in a 1D approximation. The effects of device dimensions (junction depth and photodiode thickness), emitter and base dopant concentrations have been examined in relation to the spectral dependence of the quantum efficiency. The calculations indicate that greater co......
#Semiconductor device modeling #Photodiodes #CMOS technology #CMOS process #CMOS image sensors #Photodetectors #Numerical simulation #Cameras #Military standards #Fabrication
High-performance n/sup +/-GaAs/p/sup +/-In/sub 0.49/Ga/sub 0.51/P/n-GaAs high-barrier gate heterostructure field-effect transistor
- Trang 230-233
A new heterostructure field-effect transistor (HFET) using an n/sup +/-GaAs/p/sup +/-In/sub 0.49/Ga/sub 0.51/P/n-GaAs high-barrier-gate structure has been fabricated successfully and demonstrated. The heavily doped p/sup +/-In/sub 0.49/Ga/sub 0.51/P layer is introduced to increase the barrier height and to suppress the tunneling current. Therefore, the leakage current is reduced and breakdown volt......
#Gallium arsenide #Electric breakdown #Breakdown voltage #Diodes #Insulation #Indium compounds #Leakage current #Substrates #Chemical vapor deposition #MOCVD
ZnTe-based materials for fight-emitting-devices
- Trang 61-64
High crystal quality n-type ZnTe layers are achieved by molecular beam epitaxy (MBE) using Aluminum as a dopant species. The x-ray diffraction (XRD) measurements indicate lattice contraction due to substitutional incorporation of Al and the narrow fine-width of ZnTe:Al layer (24 arcsecs) shows high structural quality of the ZnTe:Al layers. Hall effect measurement of ZnTe:Al layers exhibits the hig......
#Molecular beam epitaxial growth #Light emitting diodes #Crystalline materials #Zinc compounds #Aluminum #X-ray diffraction #X-ray scattering #Lattices #Hall effect #Temperature
Study of a Cr doped TiO/sub 2/ derived from sol-gel process for gas sensing
- Trang 69-72
The sol-gel route to thin bimetallic oxide sensor films was studied in terms of the evolution of a viscoelastic Ti gel precursor containing occluded Cr. The influence of Cr:Ti atomic ratio and annealing temperature was related to the resultant microstructure, morphology and oxygen sensing response of the annealed thin films. It was shown that progressive increase in Cr content changed the Ti-O pro......
#Chromium #Temperature sensors #Thin film sensors #Annealing #Viscosity #Elasticity #Microstructure #Morphology #Semiconductor thin films #Semiconductor films