COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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Advances in the elucidation of hydrogen-related defects in hydrogenated amorphous silicon
- Trang 527-530
The role of interstitial (mobile) hydrogen in the creation of structural defects
in doped hydrogenated amorphous silicon (a-Si:H) is elucidated by first
reviewing recent calculations of their electronic states. Two new processes
involving hydrogen interstitials are proposed. In the first, a neutral hydrogen
atom reacts with a dopant atom to produce a charged dopant-interstitial pair. In
the other ...
#Amorphous silicon #Hydrogen #Semiconductor process modeling #Doping #Bonding #Energy states #Physics #Mesons #Resonance #Charge transfer
Diode laser InGaAsP/InP / diode siêu phát sáng với các giếng lượng tử không đồng nhất Dịch bởi AI
- Trang 336-339
Hành vi mới của các diode laser (LDs) và diode siêu phát sáng (SLDs) được tạo ra
trên các substrat với giếng lượng tử không đồng nhất đã được phát hiện. Các
diode laser/ diode siêu phát sáng với giếng lượng tử không đồng nhất đã được
thiết kế, chế tạo và đo đạc. Sự phân bố không đồng nhất của các hạt mang điện
bên trong nhiều giếng lượng tử cũng đã được xác nhận thực nghiệm. Các đặc điểm
đo được c...
#Phosphua indium #Diode laser #Thiết bị giếng lượng tử #Diode bán dẫn #Diode siêu phát sáng #Quá trình hạt mang điện #Substrate #Nhiệt độ #Chế độ laser #Diode bán dẫn
Design and fabrication of a SiO/sub 2//ST-cut quartz Love mode surface acoustic wave transducer for operation in liquid media
- Trang 308-311
Love mode surface acoustic wave (SAW) transducers were designed and fabricated
by depositing silicon dioxide on a ST-cut quartz crystal wafer using r.f.
magnetron sputtering. Two different propagation directions have been
investigated by aligning the SAW finger pattern along the x-axis propagation
direction and the direction orthogonal to the x-axis of the ST-cut quartz
crystal. The latter, in whi...
#Fabrication #Surface acoustic waves #Acoustic propagation #Acoustic transducers #Acoustic waves #Silicon compounds #Sputtering #Fingers #Frequency #Capacitance
Schottky behaviour of Pd//spl beta/-SiC junctions
- Trang 328-331
Pd//spl beta/-SiC Schottky junctions using both epilayer and bulk SiC were
fabricated and characterised by current-voltage (I-V) measurements. The effect
of operating temperature on IN characteristics was studied. The ideality factor
improved considerably at higher temperature. Annealing of Pd//spl beta/-SiC
Schottky junctions at 400/spl deg/C improved the junction characteristics, which
deteriora...
#Silicon carbide #Substrates #Temperature sensors #Ohmic contacts #Schottky barriers #Materials science and technology #Gas detectors #Semiconductor films #Annealing #Semiconductor materials
Ultrafast heterobarrier MSM-photodiode structures
- Trang 137-140
The impulse response of a heterobarrier metal-semiconductor-metal photodiode to
a short laser pulse is computed and discussed in terms of the distribution of
photogenerated carriers and electric fields. We show that the use of a
heterobarrier structure greatly enhances the response speed of InP/GaInAs
MSM-detectors.
#Charge carrier processes #Fingers #Electrodes #Boundary conditions #Computational modeling #Electron mobility #Diodes #Electrostatics #Poisson equations #Algorithm design and analysis
Growth of ultrathin chemically-deposited CdS films from an ammonia-thiourea reaction system
- Trang 218-221
Polycrystalline CdS films, with thicknesses typically 0.005 to 0.5 /spl mu/m,
have been chemically deposited from an ammonia-thiourea system. The influence of
reaction parameters (i.e. concentration of reactants and pH) on film growth rate
were determined and modelled. The results of a kinetic study are presented,
resulting in the formulation of a growth rate formula. The deposited film
properties...
#Cadmium compounds #Substrates #Optical films #Chemical engineering #Kinetic theory #Transistors #Zinc compounds #Chemical processes #Temperature #Surface morphology
Self-consistent calculation of Schrodinger-Poisson equation including parallel-perpendicular kinetic energy coupling effects in semiconductor quantum wells
- Trang 383-386
At heterostructure boundaries under effective mass approximation, the parallel
momentum conservation results in the coupling between the perpendicular and
parallel kinetic energies. We present the first results of fully self-consistent
calculations including these kinetic energy coupling effects using a newly
developed self-consistent Schrodinger-Poisson equation solver. As an
application, we appl...
#Kinetic theory #Kinetic energy #Effective mass #Absorption #Equations #Electrons #Molecular beam epitaxial growth #Heterojunctions #Shape control #Optical waveguides
Microsystems for biochemical applications based on CVD diamond
- Trang 259-266
In biochemistry, microsystems become more and more attractive. Presently they
are built around capillary assemblies and reaction substrates. However, in the
future, integration with active devices like actuators and sensors will become
increasingly important. Diamond CVD films possess attractive features for many
of the building blocks needed in such a "lab on a chip" system. In fact it is
the onl...
#Semiconductor films #Biochemistry #Assembly #Substrates #Actuators #Biosensors #Inorganic materials #Semiconductor materials #Insulation #Semiconductivity
Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN
- Trang 539-542
We report the observation of intense satellite lines in the emission of p-GaN
excited at 325 nm. Up to six lines are observed at the high-energy wing of the
3.1 eV emission, with separations suggesting a multiple LO phonon-related
effect. The observed process is interpreted as hot exciton luminescence,
enhanced by potential fluctuations. Kelvin probe force microscopy was used to
image the local el...
#Excitons #Luminescence #Kelvin #Probes #Microscopy #Gallium nitride #Force measurement #Fluctuations #Surface topography #Semiconductor films
Electrical isolation of Al/sub x/Ga/sub 1-x/As by proton irradiation
- Trang 447-450
The evolution of sheet resistance (R/sub s/) of n-type and p-type conductive
Al/sub x/Ga/sub 1-x/As layers (x=0.3, 0.6 and 1.0) during proton irradiation was
investigated. The threshold dose (D/sub th/) to convert a conductive layer to a
highly resistive one is slightly different for n- and p-type samples with
similar initial free carrier concentration and does not depend on the Al
content. The th...
#Protons #Gallium arsenide #Doping #Resistors #Atmospheric measurements #Current density #Electrical resistance measurement #Rapid thermal annealing #Temperature #Ion beams