COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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Waveguiding in InGaN/GaN/AlGaN blue laser structures
- Trang 438-442
Symmetric InGaN/GaN/AlGaN conventional blue laser waveguides are analyzed. It is
shown that due to the limited thickness of the confinement layers, the
confinement factor in the active region and the modal absorption are
considerably influenced by the substrate and GaN buffer layers. These phenomena
are due to the coupling of the light outside of the active region in the
substrate and buffer layer...
#Gallium nitride #Aluminum gallium nitride #Buffer layers #Waveguide lasers #Optical waveguides #Absorption #Optical coupling #Resonance #Silicon carbide #Laser modes
Widegap II-VI compound optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells
- Trang 57-60
We report on widegap II-VI compound short wavelength optical modulators of
ZnSe/ZnMgSSe asymmetric coupled quantum wells (ACQWs). Effective mass
approximated calculations have shown that ZnSe(50/spl Aring/)-ZnMgSSe(30/spl
Aring/)-ZnSe(20/spl Aring/) ACQW exhibits weak Stark effect region (<40 kV/cm)
and strong Stark effect region (>40 kV/cm). These simulations are experimentally
confirmed by a p-i...
#Optical modulation #Zinc compounds #Optical coupling #Stark effect #PIN photodiodes #Molecular beam epitaxial growth #Optical devices #Stationary state #Quantum well devices #Temperature
Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field
- Trang 451-454
Current passing in the forward direction through a GaAs-based heterojunction at
liquid helium temperatures exhibits, under a strong magnetic field applied
parallel to the junction plane, regular fluctuations. We argue that these
fluctuations are associated with the formation of closed Aharonov-Bohm-type
orbits encircling misfit dislocations generated at the interface in which the
current carriers ...
#Magnetic field measurement #Fluctuations #Voltage #Magnetic fields #Physics #Temperature #Atomic layer deposition #Extraterrestrial measurements #Gallium arsenide #Materials science and technology
Modelling output admittance frequency dispersion in AlGaN/GaN MODFETs
- Trang 181-185
Output admittance frequency dispersion in MODFETs and MESFETs is known to be
caused by the interaction of carriers with traps in the active regions of the
device. For MODFETs in saturation, this dispersion is often shifted in frequency
and broader than expected for a discrete trap. Frequency dispersion can be
significant for devices operated in saturation, where the non-uniform electric
field in t...
#Admittance #Frequency #Aluminum gallium nitride #Gallium nitride #MODFETs #HEMTs #Dispersion #MESFETs #Electron traps #FETs
Optimizing features of photorefractive devices by tailoring native defects incorporated in the GaAs/AlGaAs multiple quantum wells
- Trang 430-433
To study the influence of defects on device effect, low temperature (LT) grown
GaAs/AlGaAs multiple-quantum-wells (MQWs) were grown under different As pressure
for the use in a Stark geometry device. The differences in the samples are their
defect density in the MQW region. By comparing optical properties, it was found
that the optimum device effect coming from high optical quality obtained from
s...
#Photorefractive materials #Gallium arsenide #Quantum well devices #Annealing #Temperature #Absorption #Optical devices #Optical materials #Photorefractive effect #Physics
Ion-implanted InP for ultrafast photodetector applications
- Trang 153-156
In order to create highly resistive InP with short carrier lifetimes, p-type
epilayers at 200/spl deg/C were implanted with MeV P/sup +/ ions up to doses of
1 /spl times/ 10/sup 16/ cm/sup -2/. Samples were subsequently annealed at
temperatures between 400/spl deg/C and 700/spl deg/C for 30s. Double crystal
x-ray diffraction, time resolved photoluminescence and Hall effect measurements
were perfor...
#Indium phosphide #Photodetectors #Charge carrier lifetime #Annealing #Temperature #X-ray diffraction #Photoluminescence #Hall effect #Time measurement #Performance evaluation
Techniques for micromachining multilayered structures in silicon
- Trang 407-410
The effects of wet anisotropic etching of [100] silicon were studied with mask
edges aligned at 45/spl deg/ to the primary wafer. Samples were etched in
aqueous KOH solution with the addition of isopropyl alcohol (IPA). The addition
of IPA caused a change from the formation of vertical {100} walls to sloping
{110} walls only for solutions below a critical concentration and temperature.
The depende...
#Micromachining #Silicon #Etching #Anisotropic magnetoresistance #Optical resonators #Optical surface waves #Temperature #Nonhomogeneous media #Optical waveguides #Microelectronics
Creating excitons in II-VI quantum wells with large binding energies
- Trang 73-80
The wide bandgap II-VI semiconductors have unique properties which allow the
possibility of suppressing the exciton-phonon scattering up to room temperature
in quantum well structures designed so that the exciton excitation E/sub 1s/spl
rarr/2s/>h/spl nu//sub LO/. High quality ZnSe quantum wells in MgS and ZnS
quantum wells in ZnMgS have been grown by MBE and these have excellent optical
propertie...
#Excitons #Optical scattering #Particle scattering #Zinc compounds #Magnetic field measurement #Temperature measurement #Phonons #Photonic band gap #Temperature dependence #Energy measurement
Vertical cavity lasers: device advances and new applications
- Trang 267-272
Central to the photonic revolution is the development of miniature light sources
such as the vertical-cavity surface-emitting laser (VCSEL). VCSEL manufacturing
has been established to provide inexpensive optical sources for data
communication applications. Recent progress in materials and fabrication
technologies has enabled a new generation of high performance VCSELs. We report
recent device adv...
#Vertical cavity surface emitting lasers #Surface emitting lasers #Optical transmitters #Optical arrays #Light sources #Optical surface waves #Manufacturing #Data communication #Optical materials #Optical device fabrication
Self-consistent calculation of Schrodinger-Poisson equation including parallel-perpendicular kinetic energy coupling effects in semiconductor quantum wells
- Trang 383-386
At heterostructure boundaries under effective mass approximation, the parallel
momentum conservation results in the coupling between the perpendicular and
parallel kinetic energies. We present the first results of fully self-consistent
calculations including these kinetic energy coupling effects using a newly
developed self-consistent Schrodinger-Poisson equation solver. As an
application, we appl...
#Kinetic theory #Kinetic energy #Effective mass #Absorption #Equations #Electrons #Molecular beam epitaxial growth #Heterojunctions #Shape control #Optical waveguides