COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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Temperature stability of HgCdTe n-on-p junctions formed by reactive ion etching
- Trang 81-84
Examination of the stability of reactive ion etching (RIE) induced n on p bulk junctions has been undertaken. Two possible type conversion mechanisms are proposed and their implications for bulk junction stability are discussed. Secondary ion mass spectrometry (SIMS) and electrical measurements have been performed before and after baking at 100/spl deg/C, giving an insight into the junction format......
#Temperature #Stability #Etching #Deuterium #Diodes #Zinc compounds #Hydrogen #Mass spectroscopy #Photodiodes #Passivation
Study of a Cr doped TiO/sub 2/ derived from sol-gel process for gas sensing
- Trang 69-72
The sol-gel route to thin bimetallic oxide sensor films was studied in terms of the evolution of a viscoelastic Ti gel precursor containing occluded Cr. The influence of Cr:Ti atomic ratio and annealing temperature was related to the resultant microstructure, morphology and oxygen sensing response of the annealed thin films. It was shown that progressive increase in Cr content changed the Ti-O pro......
#Chromium #Temperature sensors #Thin film sensors #Annealing #Viscosity #Elasticity #Microstructure #Morphology #Semiconductor thin films #Semiconductor films
Effect of dopants in the spin-on glass layer on the bandgap shift in GaAs/AlGaAs and InGaAs/AlGaAs intermixed quantum wells
- Trang 145-148
Impurity free vacancy disordering (IFVD) is induced in both GaAs/AlGaAs and InGaAs/AlGaAs QWs using undoped, Ga-doped and P-doped spin-on glass encapsulant layers. IFVD has been studied for different annealing and pre-baking temperatures, using low temperature photoluminescence (PL). The P-doped and undoped silica layers behave similarly in promoting IFVD, inducing large energy shifts. The Ga-dope......
#Glass #Photonic band gap #Gallium arsenide #Indium gallium arsenide #Silicon compounds #Rapid thermal annealing #Plasma temperature #Temperature distribution #Australia #Impurities
Thermionic cooling of optoelectronic and microelectronic devices
- Trang 415-418
Solid-state thermionic cooling has gained attention recently because of its potential high cooling power. Thermionic devices based on semiconductor heterostructures utilize the band-edge offset at a heterojunction as the thermionic emission potential barrier and a thin layer to separate the cold and hot junction. In this paper, we present the behavior of thermionic coolers with periodic barriers u......
#Cooling #Microelectronics #Gallium arsenide #Thermionic emission #Solid state circuits #Heterojunctions #Aluminum #Numerical models #Nonhomogeneous media #Phonons
A novel technique of antireflection coatings for infrared semiconductor lasers
- Trang 105-108
Antireflection (AR) coated laser diodes are very much desirable in various external cavity semiconductor laser configurations. Present work describes a simple method of silicon nitride AR coatings on infrared semiconductor lasers. Silicon nitride AR coatings were done on InAlGaAs semiconductor laser diodes emitting at 980nm by reactive sputtering. A residual reflectivity of 10/sup -2/ was achieved......
#Coatings #Semiconductor lasers #Diode lasers #Silicon #Sputtering #Reflectivity #Optical films #Semiconductor films #Refractive index #Testing
Widegap II-VI compound optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells
- Trang 57-60
We report on widegap II-VI compound short wavelength optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells (ACQWs). Effective mass approximated calculations have shown that ZnSe(50/spl Aring/)-ZnMgSSe(30/spl Aring/)-ZnSe(20/spl Aring/) ACQW exhibits weak Stark effect region (<40 kV/cm) and strong Stark effect region (>40 kV/cm). These simulations are experimentally confirmed by a p-i......
#Optical modulation #Zinc compounds #Optical coupling #Stark effect #PIN photodiodes #Molecular beam epitaxial growth #Optical devices #Stationary state #Quantum well devices #Temperature
Achievement of p-type doping in gallium nitride by beryllium implantation
- Trang 511-514
For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas and then in pure nitrogen. The sheet concentration of the holes was estimated to be about 2 /spl times/ 10/sup 13/ cm/sup -2/ from Hall measurements. The structures of the samples annealed under different conditions......
#Doping #III-V semiconductor materials #Gallium nitride #Annealing #Mass spectroscopy #X-ray diffraction #X-ray scattering #Temperature #Crystallization #Hall effect
InP/InGaAs heterojunction bipolar transistors with superlattice emitter structure
- Trang 234-237
A heterojunction bipolar transistor with superlattice emitter structure based on InP/InGaAs material system has been demonstrated. Two devices with different period of superlattice and emitter thickness were proposed. By introducing the superlattice into the emitter, the confinement of holes is enhanced. Experimentally, for higher periods of superlattice, the current gain is enhanced and more stab......
#Indium phosphide #Indium gallium arsenide #Bipolar transistors #Superlattices #Substrates #Heterojunction bipolar transistors #Resonant tunneling devices #Electrons #Effective mass #Thermal conductivity
Investigation of LDD n-MOSFET hot-carrier degradation with high gate-to-drain transverse field stressing at cryogenic temperature
- Trang 157-160
The effect of high gate-to-drain transverse field stressing at cryogenic temperature is characterized through gate-to-drain capacitance measurement. A larger degradation effect is observed at low temperature measurement because the effect of Coulomb scattering by interface charge on mobility degradation is more significant and carrier concentration is more sensitive to surface potential variation.......
#MOSFET circuits #Hot carriers #Degradation #Cryogenics #Temperature sensors #Interface states #Lead compounds #Capacitance #Current measurement #Frequency measurement
Measurement of the states of a coupled dot device
- Trang 113-116
We analyse a method to measure the states of a coupled dot device (qubit). We derive a master equation to describe the unconditional evolution of the qubit when the measured records are averaged over and a conditional stochastic master equation describing the conditional evolution of the qubit. The approach is also extended to model a measurement scheme when there is a fluctuating energy gap betwe......
#US Department of Transportation #Quantum computing #Equations #Electrons #Quantum dots #Tunneling #Australia #Stochastic processes #Physics computing #Energy measurement