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COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices

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Cathodoluminescence study of nitride transistor structures characterisation of native oxide

·Trang 133-136

E.M. Goldys, T. Paskova, J. Sheely, W. Schaff, L.F. Eastman

#Gallium nitride #Voltage #Temperature #Acceleration #HEMTs #MODFETs #Surface treatment #Rough surfaces #Surface roughness #Artificial intelligence

Determination of the junction depth of a semiconductor device by the reconstruction of the charge collection probability

·Trang 523-526

Poh Chin Phua, V.K.S. Ong

#Semiconductor devices #Integral equations #Electron beams #Geometry #Current measurement #Charge measurement #Energy measurement #Silicon #Vectors #Performance evaluation

Characterisation of reactive ion etching induced type conversion in HgCdTe

·Trang 85-88

T. Nguyen, J. Antoszewski, C.A. Musca, D.A. Redfern, J.M. Dell, L. Faraone

#Etching #Tellurium #Mercury (metals) #Magnetic field measurement #Hall effect #Conductivity measurement #Magnetic properties #Data analysis #Magnetic analysis #Plasma applications

X-ray diffraction simulation of strained InGaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy

·Trang 210-213

D. Zhou, B.F. Usher

#X-ray diffraction #Indium gallium arsenide #Quantum well devices #Lattices #Molecular beam epitaxial growth #X-ray scattering #Equations #Satellites #Optical modulation #Gallium arsenide

Measurement of optical absorption in semiconductor layer structures

·Trang 348-350

L.V. Dao, M. Gal, B.H. Koo, H. Makino, T. Yao

#Absorption #Luminescence #Optical scattering #Substrates

Temperature-dependent characteristics of InP/In/sub 0.53/Ga/sub 0.34/Al/sub 0.13/As heterojunction bipolar transistor

·Trang 238-241

Hsi-Jen Pan, Chih-Hung Yen, Kuo-Hui Yu, Kun-Wei Lin, Kuan-Po Lin, Wen-Huei Chiou, Hung-Ming Chuang, Wen-Chau Liu

#Indium phosphide #Heterojunction bipolar transistors #Electric breakdown #Photonic band gap #Optoelectronic devices #Indium gallium arsenide #Aluminum alloys #Temperature distribution #Substrates #Ohmic contacts

Diffusion length measurements using laser beam induced current

·Trang 463-466

D.A. Redfern, J.A. Thomas, C.A. Musca, J.M. Dell, L. Faraone

#Length measurement #Laser beams #Diodes #P-n junctions #Geometrical optics #Optical materials #Current measurement #Electrical resistance measurement #Laser modes #Measurement standards

COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices (Cat. No.00EX466)

·Trang i·2000

Issues in developing ohmic contacts to GaN

·Trang 292-299

E. Kaminska, A. Piotrowska, A. Barcz

#Ohmic contacts #Gallium nitride #Conductivity #Electrons #Metallization #Optical microscopy #Gold #Semiconductor device doping #Temperature #Hydrogen

Selective NO/sub 2/ gas sensing characteristics of sol-gel prepared MoO/sub 3/-WO/sub 3/ thin films

·Trang 359-362

K. Galatsis, Y.X. Li, W. Wlodarski, K. Kalantar-zadeh, E. Comini, G. Sberveglieri, C. Cantalini

#Substrates #Scanning electron microscopy #Tungsten #Transistors #Semiconductor films #Coatings #Electrodes #Silicon #Morphology #Needles