COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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CMOS image sensor overlaid with a HARP photoconversion film
- Trang 89-92
With the aim of creating a highly sensitive solid-state image sensor we developed a new CMOS image sensor that was made by overlaying a HARP (high-gain avalanche rushing amorphous photoconductor) photoconversion film on to the CMOS readout circuit. Prototype sensors were fabricated that used a new MOS transistor to increase breakdown voltage in the readout circuit. We developed connecting processe......
#CMOS image sensors #MOSFETs #Image sensors #Voltage #Pixel #CMOS process #Solid state circuits #Sensor phenomena and characterization #Amorphous materials #Charge-coupled image sensors
Finite element analysis of tunable Fabry Perot MEMS structures
- Trang 324-327
Finite element modelling of the mechanical response of MEMS structures is essential for device design and optimisation prior to any fabrication steps. We present finite element modelling (FEM) and optimisation of a MEMS Fabry-Perot (FP) optical filter using a commercial FEM package. A variety of membrane geometries have been characterised in order to maximise the tunable range whilst minimising an......
#Finite element methods #Micromechanical devices #Optical filters #Biomembranes #Design optimization #Optical device fabrication #Fabry-Perot #Packaging #Geometrical optics #Microelectromechanical devices
Optimizing features of photorefractive devices by tailoring native defects incorporated in the GaAs/AlGaAs multiple quantum wells
- Trang 430-433
To study the influence of defects on device effect, low temperature (LT) grown GaAs/AlGaAs multiple-quantum-wells (MQWs) were grown under different As pressure for the use in a Stark geometry device. The differences in the samples are their defect density in the MQW region. By comparing optical properties, it was found that the optimum device effect coming from high optical quality obtained from s......
#Photorefractive materials #Gallium arsenide #Quantum well devices #Annealing #Temperature #Absorption #Optical devices #Optical materials #Photorefractive effect #Physics
Optical characterizations of semiconducting /spl beta/-FeSi/sub 2/ films prepared by thermal annealing
- Trang 375-378
Since /spl beta/-FeSi/sub 2/ is a potential candidate for optoelectronic devices its optical properties have received recent attention of the researchers. We report here optical absorption and reflection, photoluminescence, FTIR, Raman and Micro Raman spectroscopy/mapping of /spl beta/-FeSi/sub 2/ thin films on Si produced by thermal processing. Optical absorption and reflectance reveal that the m......
#Semiconductivity #Optical films #Optical devices #Absorption #Photoluminescence #Raman scattering #Spectroscopy #Optoelectronic devices #Optical reflection #Semiconductor thin films
Effects of polarisation on solar-blind AlGaN UV photodiodes
- Trang 459-462
The effects of spontaneous and strain induced polarisation, and incomplete dopant ionisation on the spectral responsivity of a Ga-faced p-GaN/i-Al/sub 0.33/Ga/sub 0.67/N/n-GaN photodiode structure are determined using a commercial finite element modelling package. It is shown that polarisation induced interface charges increase the barrier to carriers generated in the GaN regions of the diode, imp......
#Polarization #Aluminum gallium nitride #Photodiodes #Ionization #Diodes #Capacitive sensors #Finite element methods #Semiconductor process modeling #Packaging #Solar power generation
Contrast imaging of junctions and recombination activity in MWIR HgCdTe reactive-ion etched n-on-p photodiodes
- Trang 479-482
A novel electron-beam characterization technique called Charge Contrast Imaging has been used to identify the type and spatial extent of doping and electrically active defects in MWIR reactive-ion etched (RIE) HgCdTe n-on-p photodiodes. In this technique, improved electro-morphological sensitivity to the material is observed. Quantitative characterization of the beam effects upon the junction prop......
#Etching #Scanning electron microscopy #Laser modes #Plasma temperature #Photodiodes #Laser beams #Semiconductor laser arrays #Australia #Semiconductor process modeling #Packaging
Widegap II-VI compound optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells
- Trang 57-60
We report on widegap II-VI compound short wavelength optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells (ACQWs). Effective mass approximated calculations have shown that ZnSe(50/spl Aring/)-ZnMgSSe(30/spl Aring/)-ZnSe(20/spl Aring/) ACQW exhibits weak Stark effect region (<40 kV/cm) and strong Stark effect region (>40 kV/cm). These simulations are experimentally confirmed by a p-i......
#Optical modulation #Zinc compounds #Optical coupling #Stark effect #PIN photodiodes #Molecular beam epitaxial growth #Optical devices #Stationary state #Quantum well devices #Temperature
Two major factors determining frequency response of InP avalanche photodiode
- Trang 519-522
In this paper, the frequency response limited by avalanche buildup time was calculated using a realistic model which reflects a zinc diffusion profile and includes a nonlocal multiplication theory. The dependency of a chip capacitance on the floating guard rings was also investigated. The trade-off relation between the edge gain suppression and the chip capacitance is addressed.
#Frequency response #Indium phosphide #Avalanche photodiodes #Zinc #Capacitance #SONET #Absorption #Open systems #Business communication #Cities and towns
Cathodoluminescence study of nitride transistor structures characterisation of native oxide
- Trang 133-136
Cathodoluminescence studies of GaN transistor structures have revealed a deep UV band at about 5 eV. The band was characterised as a function of accelerating voltage, temperature and spatially resolved images were taken. A similar band was detected in both undoped n-type and p-type doped GaN. We tentatively identify the band to be due to emission from the native gallium oxide.
#Gallium nitride #Voltage #Temperature #Acceleration #HEMTs #MODFETs #Surface treatment #Rough surfaces #Surface roughness #Artificial intelligence
Techniques for micromachining multilayered structures in silicon
- Trang 407-410
The effects of wet anisotropic etching of [100] silicon were studied with mask edges aligned at 45/spl deg/ to the primary wafer. Samples were etched in aqueous KOH solution with the addition of isopropyl alcohol (IPA). The addition of IPA caused a change from the formation of vertical {100} walls to sloping {110} walls only for solutions below a critical concentration and temperature. The depende......
#Micromachining #Silicon #Etching #Anisotropic magnetoresistance #Optical resonators #Optical surface waves #Temperature #Nonhomogeneous media #Optical waveguides #Microelectronics