COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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Cathodoluminescence study of nitride transistor structures characterisation of native oxide
- Trang 133-136
Cathodoluminescence studies of GaN transistor structures have revealed a deep UV
band at about 5 eV. The band was characterised as a function of accelerating
voltage, temperature and spatially resolved images were taken. A similar band
was detected in both undoped n-type and p-type doped GaN. We tentatively
identify the band to be due to emission from the native gallium oxide.
#Gallium nitride #Voltage #Temperature #Acceleration #HEMTs #MODFETs #Surface treatment #Rough surfaces #Surface roughness #Artificial intelligence
Optical and electrical low-frequency noise and their correlation in InGaAsP MQW lasers
- Trang 300-303
The optical and electrical low-frequency noise spectra and their correlation
factor of multiple quantum well strained-layer Fabry-Perot (F-P) and
distributed-feedback (DFB) InGaAsP/InP laser diodes have been investigated as a
function of temperature and current. Particular attention has been given to the
optical and electrical fluctuations due to mode-hopping effects, which are
observed in the F-P...
#Optical noise #Low-frequency noise #Quantum well devices #Laser noise #Optical feedback #Optical sensors #Laser modes #Quantum well lasers #Temperature sensors #Fabry-Perot
Wet etching techniques for the realisation of novel electrode structures on X and Z-cut lithium niobate
- Trang 194-197
Lithium niobate (LiNbO/sub 3/) is a popular material for the implementation of
many photonic devices, but most often for broadband electro-optic (EO)
modulators. Effective modulators may be realised through careful design of the
RF electrodes. The most successful electrode designs incorporate some form of
surface machining and thus in order to explore novel practical electrode
structures, it has b...
#Wet etching #Electrodes #Protons #Optical modulation #Optical attenuators #Australia #Photonics #Hafnium #Lithium niobate #Electrooptic modulators
Modelling of device structure effects in backside illuminated CMOS compatible photodiodes
- Trang 399-402
A backside illuminated CMOS photodiode consisting of an n+ (source implant)
emitter and P-substrate base has been numerically simulated in a 1D
approximation. The effects of device dimensions (junction depth and photodiode
thickness), emitter and base dopant concentrations have been examined in
relation to the spectral dependence of the quantum efficiency. The calculations
indicate that greater co...
#Semiconductor device modeling #Photodiodes #CMOS technology #CMOS process #CMOS image sensors #Photodetectors #Numerical simulation #Cameras #Military standards #Fabrication
Polycrystalline and amorphous sol-gel derived WO/sub 3/ thin films and their gas sensing properties
- Trang 206-209
Amorphous and polycrystalline tungsten trioxide (WO/sub 3/) thin films were
prepared using the sol-gel process. Tungsten ethoxide was used as precursor
material. The WO/sub 3/ thin films were spun onto the sapphire and silicon
substrates at 2500 rpm for 30 s. The X-ray diffraction (XRD) results revealed
that the films annealed at low temperature of 420/spl deg/C for 1 hr. are
amorphous while those...
#Amorphous materials #Transistors #Annealing #Temperature #Tungsten #Scanning electron microscopy #Semiconductor thin films #Silicon #Substrates #X-ray imaging
Comparison studies on growth modes of MBE grown ZnSe on GaAs [111] A and GaAs [111] B, using RHEED
- Trang 475-478
In the last three decades, research into wide bandgap II-VI semiconductors was
mainly concentrated on the growth and characterisation of ZnSe based structures
on GaAs [001] substrates. Therefore, very little is known about the growth
processes on {111} GaAs surfaces. This paper presents the comparison of surface
processes during MBE hetero-epitaxial growth of ZnSe epilayers on GaAs [111] A,
and Ga...
#Gallium arsenide #Zinc compounds #Surface reconstruction #Atomic layer deposition #Temperature #Substrates #Diffraction #Chemicals #MONOS devices #Etching
Nano-indentation characterisation of PECVD silicon nitride films
- Trang 117-120
While finite element modelling (FEM) can be employed to optimise the
displacement of the membrane structures to an applied electrostatic force, the
accuracy of the results depend critically on the material properties of the
membrane. Values for these properties can be obtained by evaluating the response
of test structures such as cantilevers and beams to various loading conditions.
We present in t...
#Silicon #Semiconductor films #Biomembranes #Stress #Micromechanical devices #Structural beams #Plasma temperature #Voltage #Atomic force microscopy #Testing
Tunable red vertical cavity surface emitting lasers using electrostatic actuation
- Trang 13-16
We report a tunable red vertical cavity surface emitting laser (VCSEL) with a
flexible micro-electro-mechanical (MEM) top distributed Bragg reflector. The
peak emission wavelength is electrically tunable over a range of 15 nm from 644
to 659 nm.
#Vertical cavity surface emitting lasers #Tunable circuits and devices #Surface emitting lasers #Electrostatic actuators #Distributed Bragg reflectors #Optical surface waves #Laser tuning #Threshold current #RNA #Gallium arsenide
Diode laser InGaAsP/InP / diode siêu phát sáng với các giếng lượng tử không đồng nhất Dịch bởi AI
- Trang 336-339
Hành vi mới của các diode laser (LDs) và diode siêu phát sáng (SLDs) được tạo ra
trên các substrat với giếng lượng tử không đồng nhất đã được phát hiện. Các
diode laser/ diode siêu phát sáng với giếng lượng tử không đồng nhất đã được
thiết kế, chế tạo và đo đạc. Sự phân bố không đồng nhất của các hạt mang điện
bên trong nhiều giếng lượng tử cũng đã được xác nhận thực nghiệm. Các đặc điểm
đo được c...
#Phosphua indium #Diode laser #Thiết bị giếng lượng tử #Diode bán dẫn #Diode siêu phát sáng #Quá trình hạt mang điện #Substrate #Nhiệt độ #Chế độ laser #Diode bán dẫn
Theoretical and experimental studies on the improvement of the response of n-type III-V QWIPs to TE mode infrared radiation
- Trang 186-189
From the theoretical calculations on bound-to-continuum transitions in III-V
compound n-type square well QWIPs based on the eight band k.p model incorporated
with the envelope function approximation, it was found that a small response to
TE mode infrared field excitation is possible. The role of the interband
transition momentum matrix element P=-i within different regions of the QWIP is
investiga...
#III-V semiconductor materials #Tellurium #Equations #Gallium arsenide #Infrared detectors #Boundary conditions #Optical computing #Function approximation #Indium gallium arsenide #Polarization