COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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Temperature stability of HgCdTe n-on-p junctions formed by reactive ion etching
- Trang 81-84
Examination of the stability of reactive ion etching (RIE) induced n on p bulk junctions has been undertaken. Two possible type conversion mechanisms are proposed and their implications for bulk junction stability are discussed. Secondary ion mass spectrometry (SIMS) and electrical measurements have been performed before and after baking at 100/spl deg/C, giving an insight into the junction format......
#Temperature #Stability #Etching #Deuterium #Diodes #Zinc compounds #Hydrogen #Mass spectroscopy #Photodiodes #Passivation
Tunable photonic bandgap devices based on Pb-La-Zr-Ti-O/Sr-Ti-O two dimensional multi-layers on GaAs substrates
- Trang 355-358
Multiple-layer perovskite Pb/sub 0.91/La/sub 0.09/Zr/sub 0.65/Ti/sub 0.35/O/sub 3//SrTiO/sub 3/ (PLZT/STO) heterostructures have been grown by pulsed laser deposition (PLD) on [001] MgO/GaAs substrates. The perovskite layers are single phase with 35nm RMS roughness on the top surface. Electrically induced birefringence in the PLZT layers, resulted in both optical phase and optical amplitude modula......
#Photonic band gap #Gallium arsenide #Optical modulation #Pulsed laser deposition #Nonlinear optics #Tunable circuits and devices #Zirconium #Optical pulses #Rough surfaces #Surface roughness
Effect of matrix on InAs self-organized nanostructures on InP substrate
- Trang 455-458
We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid source molecular beam epitaxy. Three buffers of InGaAs, InAlAs, and InP lattice matched on InP have been studied. Differences in nanostructure morphology have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements. We have observed quantum wire formation in th......
#Nanostructures #Indium phosphide #Quantum dots #Substrates #Indium gallium arsenide #Indium compounds #Atomic measurements #Atomic force microscopy #Force measurement #Surface morphology
Rapid thermal annealing of NTD Si
- Trang 411-414
Neutron transmutation doped silicon (NTD Si) wafers were annealed in a commercial rapid thermal processor (AET RX Series). As a comparison, the wafers were also annealed in a conventional electric furnace. Successful rapid thermal annealing was demonstrated by the facts that no deep level impurities were detected by deep level transient spectrometry (DLTS), and the wafers annealed with two methods......
#Rapid thermal annealing #Neutrons #Furnaces #Temperature #Rapid thermal processing #Australia #Silicon #Conductivity #Impurities #Lattices
Achievement of p-type doping in gallium nitride by beryllium implantation
- Trang 511-514
For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas and then in pure nitrogen. The sheet concentration of the holes was estimated to be about 2 /spl times/ 10/sup 13/ cm/sup -2/ from Hall measurements. The structures of the samples annealed under different conditions......
#Doping #III-V semiconductor materials #Gallium nitride #Annealing #Mass spectroscopy #X-ray diffraction #X-ray scattering #Temperature #Crystallization #Hall effect
Issues in developing ohmic contacts to GaN
- Trang 292-299
Approaches to achieve low resistivity ohmic contacts to GaN with planar and abrupt interfaces are discussed. Three types of thermally stable metallizations were studied: Ti/TiN for n-GaN, Ni/Si for p- and n-GaN, and ZrN/ZrB/sub 2/ for p-GaN. Although all these systems enable formation of ohmic contacts, it is suggested that the underlying mechanism, as investigated by a number of analytical method......
#Ohmic contacts #Gallium nitride #Conductivity #Electrons #Metallization #Optical microscopy #Gold #Semiconductor device doping #Temperature #Hydrogen
InP/InGaAs heterojunction bipolar transistors with superlattice emitter structure
- Trang 234-237
A heterojunction bipolar transistor with superlattice emitter structure based on InP/InGaAs material system has been demonstrated. Two devices with different period of superlattice and emitter thickness were proposed. By introducing the superlattice into the emitter, the confinement of holes is enhanced. Experimentally, for higher periods of superlattice, the current gain is enhanced and more stab......
#Indium phosphide #Indium gallium arsenide #Bipolar transistors #Superlattices #Substrates #Heterojunction bipolar transistors #Resonant tunneling devices #Electrons #Effective mass #Thermal conductivity
Optical and electronic properties of GaNAs/GaAs structures
- Trang 483-490
We review our recent results from studies of electronic properties of GaNAs/GaAs structures with low nitrogen content, by photoluminescence (PL), PL excitation, time-resolved PL spectroscopies as well as optically detected magnetic resonance (ODMR) and cyclotron resonance (ODCR) studies. The issues to be addressed include key material-related properties and fundamental electronic parameters of the......
#Gallium arsenide #Magnetic resonance #Magnetic properties #Nitrogen #Photoluminescence #Spectroscopy #Electron optics #Optical detectors #Cyclotrons #Spontaneous emission
Creating excitons in II-VI quantum wells with large binding energies
- Trang 73-80
The wide bandgap II-VI semiconductors have unique properties which allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E/sub 1s/spl rarr/2s/>h/spl nu//sub LO/. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical propertie......
#Excitons #Optical scattering #Particle scattering #Zinc compounds #Magnetic field measurement #Temperature measurement #Phonons #Photonic band gap #Temperature dependence #Energy measurement
Schottky behaviour of Pd//spl beta/-SiC junctions
- Trang 328-331
Pd//spl beta/-SiC Schottky junctions using both epilayer and bulk SiC were fabricated and characterised by current-voltage (I-V) measurements. The effect of operating temperature on IN characteristics was studied. The ideality factor improved considerably at higher temperature. Annealing of Pd//spl beta/-SiC Schottky junctions at 400/spl deg/C improved the junction characteristics, which deteriora......
#Silicon carbide #Substrates #Temperature sensors #Ohmic contacts #Schottky barriers #Materials science and technology #Gas detectors #Semiconductor films #Annealing #Semiconductor materials