COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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Diffusion length measurements using laser beam induced current
- Trang 463-466
The minority carrier diffusion length is a key indicator of material quality and gives an indication of n-on-p diode performance when the zero bias resistance is diffusion limited. In this study diffusion length is measured using a laser beam induced current technique, applied to a shallow p-n junction formed using standard diode junction formation conditions. Two dimensional modelling is used to ......
#Length measurement #Laser beams #Diodes #P-n junctions #Geometrical optics #Optical materials #Current measurement #Electrical resistance measurement #Laser modes #Measurement standards
Schottky behaviour of Pd//spl beta/-SiC junctions
- Trang 328-331
Pd//spl beta/-SiC Schottky junctions using both epilayer and bulk SiC were fabricated and characterised by current-voltage (I-V) measurements. The effect of operating temperature on IN characteristics was studied. The ideality factor improved considerably at higher temperature. Annealing of Pd//spl beta/-SiC Schottky junctions at 400/spl deg/C improved the junction characteristics, which deteriora......
#Silicon carbide #Substrates #Temperature sensors #Ohmic contacts #Schottky barriers #Materials science and technology #Gas detectors #Semiconductor films #Annealing #Semiconductor materials
A ZnO/SiO/sub 2//Si[100] Love mode transducer
- Trang 367-370
ZnO/SiO/sub 2//Si[100] Love mode transducers were fabricated. SiO/sub 2/ films were deposited using electron beam evaporation. ZnO films were deposited using r.f. magnetron sputtering. ZnO and SiO/sub 2/ films were examined by SEM and the performance of the transducers was examined by their acoustic response. The observation of the SAW Love mode delay line was performed under untuned conditions. O......
#Zinc oxide #Transducers #Sputtering #Substrates #Scanning electron microscopy #Piezoelectric films #Gold #Electron beams #Crystallization #Temperature
Ultra-thin epitaxial zirconia oxide on silicon with crystalline interface
- Trang 543-546
Epitaxial crystalline yittria-stabilized zirconia (YSZ) films were grown on a silicon wafer by the laser molecular beam epitaxy technique. The interface of crystalline YSZ film in contact with silicon was found atomically sharp and commensurately crystallized without an amorphous layer. X-ray Photoelectron Spectroscopy depth profile and transmission electron microscopy investigation showed there w......
#Silicon #Crystallization #Semiconductor films #X-ray lasers #Molecular beam epitaxial growth #Contacts #Atomic beams #Atomic layer deposition #Amorphous materials #Spectroscopy
Hydrogenation of ZnS passivation for HgCdTe
- Trang 177-180
The physical and electrical effects of exposing ZnS passivation to a H/sub 2//CH/sub 4/ reactive ion etch (RIE) plasma are examined. Using secondary ion mass spectrometry (SIMS) and capacitance-voltage (CV) analysis, hydrogen is shown to penetrate through the ZnS and accumulate on the ZnS side of the ZnS/HgCdTe interface, causing a reduction in the positive fixed charge density, possibly due to bi......
#Zinc compounds #Passivation #Etching #Plasma applications #Plasma density #Mass spectroscopy #Capacitance-voltage characteristics #Hydrogen #Mercury (metals) #Tellurium
Quantum noise-suppressed operation of TJS and SQW ridge-waveguide laser diodes in photon transistor configurations
- Trang 101-104
We report the first successful incorporation of shot noise-suppressed laser diodes in a closed-loop photon transistor amplifier configuration. We have measured and modelled the current gain, bandwidth and noise level of transverse junction stripe and quantum well laser diodes in open loop (optocoupler) and closed loop (common-emitter) photon transistor configurations. At liquid nitrogen temperatur......
#Diode lasers #Noise level #Photonics #Positron emission tomography #Laser noise #Laser feedback #Transistors #Coupling circuits #Detectors #Gain measurement
Vertical transport through GaAs-based heterostructures with misfit dislocations in a strong magnetic field
- Trang 451-454
Current passing in the forward direction through a GaAs-based heterojunction at liquid helium temperatures exhibits, under a strong magnetic field applied parallel to the junction plane, regular fluctuations. We argue that these fluctuations are associated with the formation of closed Aharonov-Bohm-type orbits encircling misfit dislocations generated at the interface in which the current carriers ......
#Magnetic field measurement #Fluctuations #Voltage #Magnetic fields #Physics #Temperature #Atomic layer deposition #Extraterrestrial measurements #Gallium arsenide #Materials science and technology
Temperature-dependent characteristics of InP/In/sub 0.53/Ga/sub 0.34/Al/sub 0.13/As heterojunction bipolar transistor
- Trang 238-241
Temperature-dependent DC performances of InP/InGaAlAs heterojunction bipolar transistors (HBTs) using the InGaAlAs quaternary alloy as the base and collector layers are studied and reported. When compared with conventional InP/InGaAs HBTs, the device studied exhibits a higher common-emitter breakdown voltage and a lower output conductance even at high temperature. In addition, with decreasing temp......
#Indium phosphide #Heterojunction bipolar transistors #Electric breakdown #Photonic band gap #Optoelectronic devices #Indium gallium arsenide #Aluminum alloys #Temperature distribution #Substrates #Ohmic contacts
Vehicle cabin air quality monitor using gas sensors for improved safety
- Trang 65-68
A vehicle cabin air quality monitor using carbon monoxide (CO) and oxygen (O/sub 2/) gas sensors has been designed, developed and on-road tested. The continuous monitoring of oxygen and carbon monoxide provides added vehicle safety as alarms could be set off when dangerous gas concentrations are reached, preventing driver fatigue, drowsiness, and exhaust gas suicides. CO concentrations of 30 ppm a......
#Vehicle safety #Gas detectors #Air safety #Vehicles #Carbon dioxide #Computerized monitoring #Australia #Automobiles #Electrical safety #Sensor systems
Selective NO/sub 2/ gas sensing characteristics of sol-gel prepared MoO/sub 3/-WO/sub 3/ thin films
- Trang 359-362
Molybdenum trioxide - tungsten trioxide (MoO/sub 3/-WO/sub 3/) binary metal oxide thin films have been prepared by the sol-gel process. The films were deposited using the spin coating technique onto alumina substrates with interdigital electrodes and single crystal silicon substrates for electrical and micro characterization. Scanning Electron Microscopy (SEM) showed MoO/sub 3/-WO/sub 3/ film morp......
#Substrates #Scanning electron microscopy #Tungsten #Transistors #Semiconductor films #Coatings #Electrodes #Silicon #Morphology #Needles