COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes
- Trang 125-128
Dimethyltelluride has been used as a dopant source for GaSb epilayers grown by
atmospheric pressure MOCVD (Metalorganic Chemical Vapour Deposition). Schottky
diodes were fabricated using Al barriers and Au-Ge-Ni as Ohmic contact. Doping
densities of about 4./spl times/x10/sup 18/ cm/sup -3/ and barrier heights of
0.63 eV are found from C-V measurements, compared to 0.59 eV determined from
room tem...
#MOCVD #Schottky diodes #Temperature measurement #Capacitance-voltage characteristics #Density measurement #Chemical vapor deposition #Ohmic contacts #Doping #Atmospheric measurements #Electrons
Polarity dependence and characterization of high-quality homoepitaxial ZnO layers grown on {0001} ZnO substrates
- Trang 434-437
We present our first results for the growth of ZnO layers by Molecular Beam
Epitaxy on commercial {0001} ZnO substrates of different polarities. On O-face
oriented substrates, a two-dimensional growth mode was achieved as verified by
the presence of a streaky Reflection High-Energy Electron Diffraction (RHEED)
pattern and a faint (3/spl times/3) reconstructed surface. Moreover, a distinct
specular...
#Zinc oxide #Substrates #Atomic measurements #Force measurement #Atomic force microscopy #Molecular beam epitaxial growth #Optical reflection #Electrons #Diffraction #Surface reconstruction
Optical characterizations of semiconducting /spl beta/-FeSi/sub 2/ films prepared by thermal annealing
- Trang 375-378
Since /spl beta/-FeSi/sub 2/ is a potential candidate for optoelectronic devices
its optical properties have received recent attention of the researchers. We
report here optical absorption and reflection, photoluminescence, FTIR, Raman
and Micro Raman spectroscopy/mapping of /spl beta/-FeSi/sub 2/ thin films on Si
produced by thermal processing. Optical absorption and reflectance reveal that
the m...
#Semiconductivity #Optical films #Optical devices #Absorption #Photoluminescence #Raman scattering #Spectroscopy #Optoelectronic devices #Optical reflection #Semiconductor thin films
Ultrafast heterobarrier MSM-photodiode structures
- Trang 137-140
The impulse response of a heterobarrier metal-semiconductor-metal photodiode to
a short laser pulse is computed and discussed in terms of the distribution of
photogenerated carriers and electric fields. We show that the use of a
heterobarrier structure greatly enhances the response speed of InP/GaInAs
MSM-detectors.
#Charge carrier processes #Fingers #Electrodes #Boundary conditions #Computational modeling #Electron mobility #Diodes #Electrostatics #Poisson equations #Algorithm design and analysis
Ion-implanted InP for ultrafast photodetector applications
- Trang 153-156
In order to create highly resistive InP with short carrier lifetimes, p-type
epilayers at 200/spl deg/C were implanted with MeV P/sup +/ ions up to doses of
1 /spl times/ 10/sup 16/ cm/sup -2/. Samples were subsequently annealed at
temperatures between 400/spl deg/C and 700/spl deg/C for 30s. Double crystal
x-ray diffraction, time resolved photoluminescence and Hall effect measurements
were perfor...
#Indium phosphide #Photodetectors #Charge carrier lifetime #Annealing #Temperature #X-ray diffraction #Photoluminescence #Hall effect #Time measurement #Performance evaluation
Magneto-optical spectroscopy of defects in wide bandgap semiconductors: GaN and SiC
- Trang 497-502
We review recent progress in our understanding of intrinsic defects in GaN and
SiC, gained from magneto-optical studies by Zeeman measurements and optically
detected magnetic resonance. The two best-known intrinsic defects in these two
wide bandgap semiconductors, i.e. the Ga interstitial in GaN and the silicon
vacancy in SiC, are discussed in detail. The Ga interstitial is the first and
only intr...
#Spectroscopy #Gallium nitride #Silicon carbide #Optical detectors #Magnetic resonance #Electron optics #Hafnium #Wave functions #Wide band gap semiconductors #Temperature
A novel technique of antireflection coatings for infrared semiconductor lasers
- Trang 105-108
Antireflection (AR) coated laser diodes are very much desirable in various
external cavity semiconductor laser configurations. Present work describes a
simple method of silicon nitride AR coatings on infrared semiconductor lasers.
Silicon nitride AR coatings were done on InAlGaAs semiconductor laser diodes
emitting at 980nm by reactive sputtering. A residual reflectivity of 10/sup -2/
was achieved...
#Coatings #Semiconductor lasers #Diode lasers #Silicon #Sputtering #Reflectivity #Optical films #Semiconductor films #Refractive index #Testing
Modelling output admittance frequency dispersion in AlGaN/GaN MODFETs
- Trang 181-185
Output admittance frequency dispersion in MODFETs and MESFETs is known to be
caused by the interaction of carriers with traps in the active regions of the
device. For MODFETs in saturation, this dispersion is often shifted in frequency
and broader than expected for a discrete trap. Frequency dispersion can be
significant for devices operated in saturation, where the non-uniform electric
field in t...
#Admittance #Frequency #Aluminum gallium nitride #Gallium nitride #MODFETs #HEMTs #Dispersion #MESFETs #Electron traps #FETs
An equivalent circuit for simulating Love mode acoustic wave transducers: comparison of simulation and experimental results
- Trang 371-374
A simulation was performed using the equivalent circuit previously developed for
a Love mode surface acoustic wave transducer. The present model is based on the
Mason equivalent circuit for inter-digital fingers. A Love mode SiO/sub
2//ST-cut quartz transducer with operating frequency at 96 MHz was fabricated
and the transfer function and input impedance were measured. Simulation results
were comp...
#Circuit simulation #Equivalent circuits #Acoustic waves #Acoustic transducers #Surface acoustic waves #Fingers #Frequency #Transfer functions #Surface impedance #Acoustic measurements
Cathodoluminescence study of nitride transistor structures characterisation of native oxide
- Trang 133-136
Cathodoluminescence studies of GaN transistor structures have revealed a deep UV
band at about 5 eV. The band was characterised as a function of accelerating
voltage, temperature and spatially resolved images were taken. A similar band
was detected in both undoped n-type and p-type doped GaN. We tentatively
identify the band to be due to emission from the native gallium oxide.
#Gallium nitride #Voltage #Temperature #Acceleration #HEMTs #MODFETs #Surface treatment #Rough surfaces #Surface roughness #Artificial intelligence