COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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Các bài báo tiêu biểu
CMOS image sensor overlaid with a HARP photoconversion film
- Trang 89-92
With the aim of creating a highly sensitive solid-state image sensor we developed a new CMOS image sensor that was made by overlaying a HARP (high-gain avalanche rushing amorphous photoconductor) photoconversion film on to the CMOS readout circuit. Prototype sensors were fabricated that used a new MOS transistor to increase breakdown voltage in the readout circuit. We developed connecting processe......
#CMOS image sensors #MOSFETs #Image sensors #Voltage #Pixel #CMOS process #Solid state circuits #Sensor phenomena and characterization #Amorphous materials #Charge-coupled image sensors
Quantum dots and photonic microcavities: properties and optoelectronic device applications
- Trang 17-24
The properties of quantum dot intersubband lasers and the unique carrier dynamics in the quantum dots that lead to the realization of these long wavelength devices are described. Photons also display unique properties when confined in a cavity whose size is of the order of the wavelength. The properties of a unique electroluminescent light emitter, in which the microcavity is a single defect in a ......
#Quantum dots #US Department of Transportation #Microcavities #Quantum dot lasers #Spontaneous emission #Carrier confinement #Optical materials #Light emitting diodes #Semiconductor lasers #Application software
Effect of matrix on InAs self-organized nanostructures on InP substrate
- Trang 455-458
We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid source molecular beam epitaxy. Three buffers of InGaAs, InAlAs, and InP lattice matched on InP have been studied. Differences in nanostructure morphology have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements. We have observed quantum wire formation in th......
#Nanostructures #Indium phosphide #Quantum dots #Substrates #Indium gallium arsenide #Indium compounds #Atomic measurements #Atomic force microscopy #Force measurement #Surface morphology
Widegap II-VI compound optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells
- Trang 57-60
We report on widegap II-VI compound short wavelength optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells (ACQWs). Effective mass approximated calculations have shown that ZnSe(50/spl Aring/)-ZnMgSSe(30/spl Aring/)-ZnSe(20/spl Aring/) ACQW exhibits weak Stark effect region (<40 kV/cm) and strong Stark effect region (>40 kV/cm). These simulations are experimentally confirmed by a p-i......
#Optical modulation #Zinc compounds #Optical coupling #Stark effect #PIN photodiodes #Molecular beam epitaxial growth #Optical devices #Stationary state #Quantum well devices #Temperature
Growth of ultrathin chemically-deposited CdS films from an ammonia-thiourea reaction system
- Trang 218-221
Polycrystalline CdS films, with thicknesses typically 0.005 to 0.5 /spl mu/m, have been chemically deposited from an ammonia-thiourea system. The influence of reaction parameters (i.e. concentration of reactants and pH) on film growth rate were determined and modelled. The results of a kinetic study are presented, resulting in the formulation of a growth rate formula. The deposited film properties......
#Cadmium compounds #Substrates #Optical films #Chemical engineering #Kinetic theory #Transistors #Zinc compounds #Chemical processes #Temperature #Surface morphology
Dislocation configurations in strained single-heterostructure layers
- Trang 471-474
Detailed force-balance considerations can lead to a description of the dislocation configuration within a strained layer. Dislocation configurations are of interest because critical thicknesses of epitaxially grown layers depend on the evolution of the configuration of threading dislocations. Moreover, it promises to shed light on investigations of critical thickness criteria for Multiple Quantum ......
#Iron #Capacitive sensors #III-V semiconductor materials #Stress #Geometry #Atmosphere #Surface tension #Surface treatment #Shape #Equations
Microstructural characterization of sol-gel derived Ga/sub 2/O/sub 3/-TiO/sub 2/ thin films for gas sensing
- Trang 363-366
Binary TiO/sub 2/-Ga/sub 2/O/sub 3/ thin films were prepared from the sol-gel process. Titanium butoxide and gallium isopropoxide were used as precursor materials. The mixed solution was spun onto the sapphire and silicon substrates at 2500 rpm for 30 s to prepare thin films. The X-Ray Diffraction (XRD) results revealed that the films annealed at a temperature of 500/spl deg/C for 1 hr is /spl gam......
#Gallium #Transistors #Temperature #Scanning electron microscopy #Titanium #Silicon #Substrates #Semiconductor thin films #X-ray imaging #X-ray diffraction
Author index
- Trang 551-554 - 2000
The author index contains an entry for each author and coauthor included in the proceedings record.
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices (Cat. No.00EX466)
- Trang i - 2000
Presents the front cover of the proceedings record.
Gas sensing applications of novel semiconductor materials
- Trang 253-258
Recent trends in research on gas sensors based on semiconducting thin films are presented. The films, all deposited by RF reactive sputtering from metallic targets, are investigated by the volt-amperometric technique for electrical and gas-sensing properties. The layers were able to sense CO and NO/sub 2/. No surface poisoning effect was recorded, and resistance recovery was complete. Concentratio......
#Semiconductor materials #Gas detectors #Sputtering #Surface resistance #Semiconductivity #Semiconductor thin films #Thin film sensors #Semiconductor films #Radio frequency #Electric resistance