COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices
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Microsystems for biochemical applications based on CVD diamond
- Trang 259-266
In biochemistry, microsystems become more and more attractive. Presently they
are built around capillary assemblies and reaction substrates. However, in the
future, integration with active devices like actuators and sensors will become
increasingly important. Diamond CVD films possess attractive features for many
of the building blocks needed in such a "lab on a chip" system. In fact it is
the onl...
#Semiconductor films #Biochemistry #Assembly #Substrates #Actuators #Biosensors #Inorganic materials #Semiconductor materials #Insulation #Semiconductivity
Temperature stability of HgCdTe n-on-p junctions formed by reactive ion etching
- Trang 81-84
Examination of the stability of reactive ion etching (RIE) induced n on p bulk
junctions has been undertaken. Two possible type conversion mechanisms are
proposed and their implications for bulk junction stability are discussed.
Secondary ion mass spectrometry (SIMS) and electrical measurements have been
performed before and after baking at 100/spl deg/C, giving an insight into the
junction format...
#Temperature #Stability #Etching #Deuterium #Diodes #Zinc compounds #Hydrogen #Mass spectroscopy #Photodiodes #Passivation
Effect of matrix on InAs self-organized nanostructures on InP substrate
- Trang 455-458
We report the influence of the matrix in InAs nanostructures grown on InP[001]
substrates by solid source molecular beam epitaxy. Three buffers of InGaAs,
InAlAs, and InP lattice matched on InP have been studied. Differences in
nanostructure morphology have been evaluated by atomic force microscopy and by
low-temperature photoluminescence measurements. We have observed quantum wire
formation in th...
#Nanostructures #Indium phosphide #Quantum dots #Substrates #Indium gallium arsenide #Indium compounds #Atomic measurements #Atomic force microscopy #Force measurement #Surface morphology
Investigation of LDD n-MOSFET hot-carrier degradation with high gate-to-drain transverse field stressing at cryogenic temperature
- Trang 157-160
The effect of high gate-to-drain transverse field stressing at cryogenic
temperature is characterized through gate-to-drain capacitance measurement. A
larger degradation effect is observed at low temperature measurement because the
effect of Coulomb scattering by interface charge on mobility degradation is more
significant and carrier concentration is more sensitive to surface potential
variation....
#MOSFET circuits #Hot carriers #Degradation #Cryogenics #Temperature sensors #Interface states #Lead compounds #Capacitance #Current measurement #Frequency measurement
Creating excitons in II-VI quantum wells with large binding energies
- Trang 73-80
The wide bandgap II-VI semiconductors have unique properties which allow the
possibility of suppressing the exciton-phonon scattering up to room temperature
in quantum well structures designed so that the exciton excitation E/sub 1s/spl
rarr/2s/>h/spl nu//sub LO/. High quality ZnSe quantum wells in MgS and ZnS
quantum wells in ZnMgS have been grown by MBE and these have excellent optical
propertie...
#Excitons #Optical scattering #Particle scattering #Zinc compounds #Magnetic field measurement #Temperature measurement #Phonons #Photonic band gap #Temperature dependence #Energy measurement
Tunable photonic bandgap devices based on Pb-La-Zr-Ti-O/Sr-Ti-O two dimensional multi-layers on GaAs substrates
- Trang 355-358
Multiple-layer perovskite Pb/sub 0.91/La/sub 0.09/Zr/sub 0.65/Ti/sub 0.35/O/sub
3//SrTiO/sub 3/ (PLZT/STO) heterostructures have been grown by pulsed laser
deposition (PLD) on [001] MgO/GaAs substrates. The perovskite layers are single
phase with 35nm RMS roughness on the top surface. Electrically induced
birefringence in the PLZT layers, resulted in both optical phase and optical
amplitude modula...
#Photonic band gap #Gallium arsenide #Optical modulation #Pulsed laser deposition #Nonlinear optics #Tunable circuits and devices #Zirconium #Optical pulses #Rough surfaces #Surface roughness
Mesoporous thin films for chemical sensors
- Trang 49-56
Silica mesoporous thin-films were prepared using cetyltrimethylammonium bromide
surfactant as a template. The films were deposited by dip-coating on Si and
alumina substrates and calcined at 250 and 450/spl deg/C. The films were
characterized by X-ray diffraction (XRD) analysis, Fourier transform infrared
(FTIR) spectroscopy and Rutherford backscattering spectrometry (RBS). The films
maintained th...
#Mesoporous materials #Thin film sensors #Chemical sensors #Humidity #Silicon compounds #Thin films #Infrared spectra #Spectroscopy #Alcoholic beverages #Testing
Ultrafast heterobarrier MSM-photodiode structures
- Trang 137-140
The impulse response of a heterobarrier metal-semiconductor-metal photodiode to
a short laser pulse is computed and discussed in terms of the distribution of
photogenerated carriers and electric fields. We show that the use of a
heterobarrier structure greatly enhances the response speed of InP/GaInAs
MSM-detectors.
#Charge carrier processes #Fingers #Electrodes #Boundary conditions #Computational modeling #Electron mobility #Diodes #Electrostatics #Poisson equations #Algorithm design and analysis
Selection of magnetic fields for magneto-transport experiments
- Trang 467-470
Magnetic field dependent Hall and resistivity measurements can provide
information about the mobilities and carrier concentrations of multiple carriers
contributing to conductivity. Typically this involves taking measurements at a
series of magnetic field values in an attempt to simulate the whole magnetic
field range. A Monte Carlo technique is used to examine the relationship between
the error i...
#Magnetic fields #Magnetic field measurement #Tensile stress #Conductivity measurement #Magnetic analysis #Time measurement #Shape measurement #Monte Carlo methods #Data mining #Data analysis
Spatial and intensity modulation of light emission from silicon LED matrix
- Trang 29-32
A novel experimental multi-terminal silicon light emitting diode matrix is
described where both the emitted light intensity and the spatial light pattern
of the device are controlled by insulated MOS gate voltages. It is found that
the light intensity is a nonlinear quadratic function of the applied gate
voltage. The non-linear relationship enables, for example, the mixing of
electrical input sign...
#Intensity modulation #Silicon #Light emitting diodes #Voltage control #Optical modulation #Lighting control #Insulation #Nonlinear optical devices #Nonlinear optics #Stimulated emission