Widegap II-VI compound optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 57-60
Tóm tắt
We report on widegap II-VI compound short wavelength optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells (ACQWs). Effective mass approximated calculations have shown that ZnSe(50/spl Aring/)-ZnMgSSe(30/spl Aring/)-ZnSe(20/spl Aring/) ACQW exhibits weak Stark effect region (<40 kV/cm) and strong Stark effect region (>40 kV/cm). These simulations are experimentally confirmed by a p-i-n structure ACQW modulator grown by molecular beam epitaxy (MBE). The present device exhibits a low reverse bias operation (/spl sim/8 V) with modulation ratio(T/sub on//T/sub off/) of 1.08 at room temperature.
Từ khóa
#Optical modulation #Zinc compounds #Optical coupling #Stark effect #PIN photodiodes #Molecular beam epitaxial growth #Optical devices #Stationary state #Quantum well devices #TemperatureTài liệu tham khảo
10.1016/S0022-0248(00)00137-8
10.1063/1.348581
10.1063/1.109104
miller, 1990, Opt Quantum Electron, 22, 61s, 10.1007/BF02089001