COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices

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Cathodoluminescence study of ion implanted GaN
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - - Trang 190-193
S.O. Kucheyev, M. Toth, M.R. Phillips, J.S. Williams, C. Jagadish, G. Li
The effect of ion-beam-produced defects as well as H, C, and O, introduced by ion implantation, on the luminescence from wurtzite GaN is studied by cathodoluminescence (CL) spectroscopy. Results indicate that even relatively low dose keV light-ion bombardment results in a dramatic quenching of CL emission. Postimplantation annealing at temperatures up to 1050/spl deg/C generally causes a partial r... hiện toàn bộ
#Gallium nitride #Luminescence #Ion implantation #Lattices #Implants #Australia #Particle beam optics #Impurities #Rapid thermal annealing #Electron beams
A layered structure surface acoustic wave for oxygen sensing
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - - Trang 202-205
K. Kalantar-Zadeh, Y.X. Li, W. Wlodarski, F. Brennan
A novel layered structure surface acoustic wave (layered SAW) transducer has been employed for an oxygen sensing application. It is a SiO/sub 2/(0.36 /spl mu/m)/ST-cut quartz crystal transducer. The dominant mode propagating in the transducer is a combination of Rayleigh and Love modes. Such a structure has the advantage of confining the acoustic wave energy to the top selective layer, which incre... hiện toàn bộ
#Surface acoustic waves #Acoustic waves #Oxygen #Acoustic sensors #Acoustic transducers #Delay lines #Substrates #Gas detectors #Boundary conditions #Oscillators
Detailed structural characterisation of semiconductors with X-ray scattering
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - - Trang 1-8
P.F. Fewster
The physical properties of devices critically depend on the structural parameters, from thickness and composition to aspects of the microstructure. The measurement of alloy composition and thickness in perfect semiconductors, for example, can be determined automatically using dynamical scattering theory. As the challenge to mix various materials with different lattice parameters appears evermore i... hiện toàn bộ
#X-ray scattering #Microstructure #Structural engineering #Thickness measurement #Particle scattering #Semiconductor materials #Lattices #Capacitive sensors #Data mining #Gallium nitride
Waveguiding in InGaN/GaN/AlGaN blue laser structures
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - - Trang 438-442
M. Buda, C. Jagadish, G.A. Acket, J.H. Wolter
Symmetric InGaN/GaN/AlGaN conventional blue laser waveguides are analyzed. It is shown that due to the limited thickness of the confinement layers, the confinement factor in the active region and the modal absorption are considerably influenced by the substrate and GaN buffer layers. These phenomena are due to the coupling of the light outside of the active region in the substrate and buffer layer... hiện toàn bộ
#Gallium nitride #Aluminum gallium nitride #Buffer layers #Waveguide lasers #Optical waveguides #Absorption #Optical coupling #Resonance #Silicon carbide #Laser modes
A novel model for optical functions of GaSb
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - - Trang 161-164
A.B. Djurisic, J.T. Chan, A.D. Rakic, M.L. Majewski, E.H. Li
In this paper we propose an analytical expression for the complex dielectric function of semiconductors which includes both discrete and continuum exciton effects. We start from the unbroadened expression for the dielectric function based on Elliott's work [R. J. Elliott, Phys. Rev. 108 (1957) 1384], and after the introduction of broadening we obtain the expression for the complex dielectric funct... hiện toàn bộ
#Dielectrics #Excitons #Optical refraction #Analytical models #Equations #Mathematics #Computer science #Australia #Absorption #Solids
Selection of magnetic fields for magneto-transport experiments
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - - Trang 467-470
D.A. Redfern, J. Antoszewski, L. Faraone
Magnetic field dependent Hall and resistivity measurements can provide information about the mobilities and carrier concentrations of multiple carriers contributing to conductivity. Typically this involves taking measurements at a series of magnetic field values in an attempt to simulate the whole magnetic field range. A Monte Carlo technique is used to examine the relationship between the error i... hiện toàn bộ
#Magnetic fields #Magnetic field measurement #Tensile stress #Conductivity measurement #Magnetic analysis #Time measurement #Shape measurement #Monte Carlo methods #Data mining #Data analysis
Effect of matrix on InAs self-organized nanostructures on InP substrate
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - - Trang 455-458
Q.D. Zhuang, S.F. Yoon, H.Q. Zheng
We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid source molecular beam epitaxy. Three buffers of InGaAs, InAlAs, and InP lattice matched on InP have been studied. Differences in nanostructure morphology have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements. We have observed quantum wire formation in th... hiện toàn bộ
#Nanostructures #Indium phosphide #Quantum dots #Substrates #Indium gallium arsenide #Indium compounds #Atomic measurements #Atomic force microscopy #Force measurement #Surface morphology
Thin films of Zr/sub 1-x/Sn/sub x/TiO/sub 4/ for application in microelectronics
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - - Trang 379-382
G. Gusmano, A. Bianco, M. Viticoli, S. Kaciulis, G. Mattogno, L. Pandolfi
Thin films of Zr/sub 1-x/Sn/sub x/TiO/sub 4/ (ZTS) were prepared by the polymeric precursor route. The influence of process parameters and dopants (Nb, Sb and Ta) on the chemical composition of the films was investigated by means of the XPS technique. Surface segregation of Sn/sup IV/ and the presence of Sn/sup 0/, Ti/sup II/, and Ti/sup III/ species in the films were revealed from XPS depth profi... hiện toàn bộ
#Transistors #Zirconium #Tin #Microelectronics #Sputtering #Surface contamination #Electrostatics #Lenses #Gold #Chemical elements
High power, kink-free 970 nm InGaAs/AlGaAs laser diodes with asymmetric structure
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - - Trang 149-152
M. Buda, L. Fu, J. Hay, H.H. Tan, C. Jagadish
High power (265 mW) kink free operation of 4 /spl mu/m wide stripe devices is demonstrated for a 970 nm InGaAs/GaAs/AlGaAs asymmetric structure in CW conditions. The maximum of the optical field distribution is moved towards the n-side of the structure. The structure was designed to allow a higher value of the catastrophic optical damage of the mirror (COD). For devices having uncoated mirrors the... hiện toàn bộ
#Indium gallium arsenide #Diode lasers #Optical pumping #Optical waveguides #Optical pulses #Pulse amplifiers #Space vector pulse width modulation #Absorption #Power engineering and energy #Gallium arsenide
Creating excitons in II-VI quantum wells with large binding energies
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - - Trang 73-80
B. Urbaszek, C. Morhain, C. Bradford, C.B. O'Donnell, S.A. Telfer, X. Tang, A. Balocchi, K.A. Prior, B.C. Cavenett, C.M. Townsley, R.J. Nicholas
The wide bandgap II-VI semiconductors have unique properties which allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E/sub 1s/spl rarr/2s/>h/spl nu//sub LO/. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical propertie... hiện toàn bộ
#Excitons #Optical scattering #Particle scattering #Zinc compounds #Magnetic field measurement #Temperature measurement #Phonons #Photonic band gap #Temperature dependence #Energy measurement
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