Effect of matrix on InAs self-organized nanostructures on InP substrate
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 455-458
Tóm tắt
We report the influence of the matrix in InAs nanostructures grown on InP[001] substrates by solid source molecular beam epitaxy. Three buffers of InGaAs, InAlAs, and InP lattice matched on InP have been studied. Differences in nanostructure morphology have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements. We have observed quantum wire formation in the InAs/InGaAs and InAs/InAlAs system, while quantum dots with bimodal size distribution appeared in the InAs/InP system. The observed drastic modification of nanostructures is attributed to the anisotropic buffer layer surface, and the bimodal size distribution of InAs quantum dots on InP buffer is simply explained by the surface mass transfer.
Từ khóa
#Nanostructures #Indium phosphide #Quantum dots #Substrates #Indium gallium arsenide #Indium compounds #Atomic measurements #Atomic force microscopy #Force measurement #Surface morphologyTài liệu tham khảo
10.1049/el:19961147
10.1016/0038-1101(95)00374-6
10.1063/1.116122
10.1063/1.120737
10.1063/1.122634
10.1063/1.124633
10.1063/1.123045
gonzalez, 1999, J Martinez-Paster, 76, 1104
10.1063/1.120062
ponchet, 1995, Appl Phys Lett, 67, 1850, 10.1063/1.114353
10.1103/PhysRevB.50.11687
10.1143/JJAP.34.L1445
10.1103/PhysRevLett.75.93
10.1063/1.111502
10.1063/1.124023
10.1016/0022-0248(95)01055-6
10.1049/el:19981278
10.1063/1.92959
10.1063/1.125320