High power, kink-free 970 nm InGaAs/AlGaAs laser diodes with asymmetric structure

High power (265 mW) kink free operation of 4 /spl mu/m wide stripe devices is demonstrated for a 970 nm InGaAs/GaAs/AlGaAs asymmetric structure in CW conditions. The maximum of the optical field distribution is moved towards the n-side of the structure. The structure was designed to allow a higher value of the catastrophic optical damage of the mirror (COD). For devices having uncoated mirrors the COD level is 200 mW / facet. The kink free operation is limited by thermal waveguiding. The same devices operate kink free until 500 mA if operated in pulsed conditions: 1.75 /spl mu/s pulse width / 36 /spl mu/s between pulses.