Microstructural characterization of sol-gel derived Ga/sub 2/O/sub 3/-TiO/sub 2/ thin films for gas sensing
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 363-366
Tóm tắt
Binary TiO/sub 2/-Ga/sub 2/O/sub 3/ thin films were prepared from the sol-gel process. Titanium butoxide and gallium isopropoxide were used as precursor materials. The mixed solution was spun onto the sapphire and silicon substrates at 2500 rpm for 30 s to prepare thin films. The X-Ray Diffraction (XRD) results revealed that the films annealed at a temperature of 500/spl deg/C for 1 hr is /spl gamma/-Ga/sub 2/O/sub 3/ structure. Scanning Electronic Microscope (SEM) images revealed that the film surface is smooth with grains in a nanometer scale. The film showed good responses to 100 ppm, 1000 ppm and 1% O/sub 2/ at an operating temperature of 470/spl deg/C. The resistance of Ga-doped TiO/sub 2/ film is between the resistances of pure TiO/sub 2/ and Ga/sub 2/O/sub 3/ films. The response of Ga-doped TiO/sub 2/ thin film is sensitive, fast and stable to oxygen gas.
Từ khóa
#Gallium #Transistors #Temperature #Scanning electron microscopy #Titanium #Silicon #Substrates #Semiconductor thin films #X-ray imaging #X-ray diffractionTài liệu tham khảo
10.1016/S0925-4005(01)00668-2
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