Growth of ultrathin chemically-deposited CdS films from an ammonia-thiourea reaction system

E.A. Gluszak1, S. Hinckley2
1Center for Very High Speed Microelectronic System School of Engineering and Mathematics, Edith Cowan University, Joondalup, WA, Australia
2Center for Very High Speed Microelectronic System School of Engineering and Mathematics, Edith Cowan University, Joondalup, Australia

Tóm tắt

Polycrystalline CdS films, with thicknesses typically 0.005 to 0.5 /spl mu/m, have been chemically deposited from an ammonia-thiourea system. The influence of reaction parameters (i.e. concentration of reactants and pH) on film growth rate were determined and modelled. The results of a kinetic study are presented, resulting in the formulation of a growth rate formula. The deposited film properties are dependent on temperature, stirring, relative concentrations of the solution reactants, type of reactants, and solution pH. Thin film growth is thermally activated with an activation energy E/sub A//spl sim/5/spl times/10/sup 23/ eV/mol.

Từ khóa

#Cadmium compounds #Substrates #Optical films #Chemical engineering #Kinetic theory #Transistors #Zinc compounds #Chemical processes #Temperature #Surface morphology

Tài liệu tham khảo

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