CMOS image sensor overlaid with a HARP photoconversion film
COMMAD 2000 Proceedings. Conference on Optoelectronic and Microelectronic Materials and Devices - Trang 89-92
Tóm tắt
With the aim of creating a highly sensitive solid-state image sensor we developed a new CMOS image sensor that was made by overlaying a HARP (high-gain avalanche rushing amorphous photoconductor) photoconversion film on to the CMOS readout circuit. Prototype sensors were fabricated that used a new MOS transistor to increase breakdown voltage in the readout circuit. We developed connecting processes that were used to connect the HARP film to the readout circuit. Stable operation of the sensor was observed when the target voltage of 60 V was applied.
Từ khóa
#CMOS image sensors #MOSFETs #Image sensors #Voltage #Pixel #CMOS process #Solid state circuits #Sensor phenomena and characterization #Amorphous materials #Charge-coupled image sensorsTài liệu tham khảo
hayashida, 1998, Fabrication of Indium Micro-bump with Double-Layer Photoresist Process, Extended Abstracts (45 JASP Spring Meeting), 7 3
nakayama, 1997, A High-Voltage MOS Transistor for Solid-state Imager with Avalanche Multiplier Film, Proceedings of The 1997 IEICE General Conference, c 11 10
hayashida, 2000, Process-development of CMOS Image Sensor Overlaid with a HARP Photoconversion Layer, Proc 2000 ITE Annual Convention, 139
park, 1999, An a-Se HARP Layer for a Solid-State Image Sensor, Proc IEEE Workshop on CCD and Advanced Image Sensors
tanioka, 1988, Advances in Electronics and Electron Physics, 74, 379, 10.1016/S0065-2539(08)60476-X