Structural and morphological properties of ITO thin films grown by magnetron sputtering

Journal of Theoretical and Applied Physics - Tập 9 - Trang 285-290 - 2015
Z. Ghorannevis1, E. Akbarnejad2, M. Ghoranneviss2
1Department of Physics, Karaj Branch, Islamic Azad University, Karaj, Iran
2Plasma Physics Research Centre, Science and Research Branch, Islamic Azad University, Tehran, Iran

Tóm tắt

Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10−5 Ω cm.

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