Structure and optical properties of heterostructures based on MOCVD (Al x Ga1 − x As1 − y P y )1 − z Si z alloys Tập 48 - Trang 21-29 - 2014
Alloys P. V. Seredin, A. V. Glotov, A. S. Lenshin, I. N. Arsentyev, D. A. Vinokurov, Tatiana Prutskij, Harald Leiste, Monica Rinke
Epitaxial heterostructures produced by MOCVD on the basis of Al
x
Ga1 − x
As ternary alloys with the composition parameter x ≈ 0.20–0.50 and doped to a high Si and P atomic content are studied. Using the high-resolution X-ray diffraction technique, scanning electron microscopy, X-ray microanalysis, Raman spectroscopy, and photoluminescence spectros...... hiện toàn bộ
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands - 1999
B. V. Volovik, A. F. Tsatsulnikov, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, М. В. Максимов, N. A. Maleev, Yu. G. Musikhin, Alexandra Suvorova, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alfërov, D. Bimberg, P. Werner