Structure and optical properties of heterostructures based on MOCVD (Al x Ga1 − x As1 − y P y )1 − z Si z alloys Tập 48 - Trang 21-29 - 2014
Alloys P. V. Seredin, A. V. Glotov, A. S. Lenshin, I. N. Arsentyev, D. A. Vinokurov, Tatiana Prutskij, Harald Leiste, Monica Rinke
Epitaxial heterostructures produced by MOCVD on the basis of Al x Ga1 − x As
ternary alloys with the composition parameter x ≈ 0.20–0.50 and doped to a high
Si and P atomic content are studied. Using the high-resolution X-ray diffraction
technique, scanning electron microscopy, X-ray microanalysis, Raman
spectroscopy, and photoluminescence spectroscopy, it is shown that the epitaxial
films grown b... hiện toàn bộ
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands - 1999
B. V. Volovik, A. F. Tsatsulnikov, D. A. Bedarev, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, N. N. Ledentsov, М. В. Максимов, N. A. Maleev, Yu. G. Musikhin, Alexandra Suvorova, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alfërov, D. Bimberg, P. Werner