Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

Semiconductors - Tập 40 Số 5 - Trang 605-610 - 2006
А. А. Ефремов1, N. I. Bochkareva2, R. I. Gorbunov2, D. A. Lavrinovich2, Yu. T. Rebane2, D. V. Tarkhin2, Yu. G. Shreter2
1St. Petersburg State Polytechnical University, St. Petersburg, Russia
2Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia

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