The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy

Semiconductors - Tập 39 Số 5 - Trang 557-564 - 2005
G. É. Cirlin1,2, V. G. Dubrovskiı̆2, N. V. Sibirev1, І. П. Сошніков2, Yu. B. Samsonenko1,2, A. A. Tonkikh1,2, V. M. Ustinov2
1Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia

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K. Hiruma, M. Yazawa, T. Katsuyama, et al., J. Appl. Phys. 77(2), 447 (1995).

X. Duan, J. Wang, and C. M. Lieber, Appl. Phys. Lett. 76, 1116 (2000).

Y. Cui and C. M. Lieber, Science 91, 851 (2000).

K. Haraguchi, T. Katsuyama, K. Hiruma, and K. Ogawa, Appl. Phys. Lett. 60, 745 (1992).

B. J. Ohlsson, M. T. Björk, M. H. Magnusson, et al., Appl. Phys. Lett. 79, 3335 (2001).

T. I. Kamins, X. Li, and R. Stanley Williams, Appl. Phys. Lett. 82, 263 (2003).

J. Westwater, D. P. Gosain, S. Tomiya, et al., J. Vac. Sci. Technol. B 15, 554 (1997).

Y. Huang, X. Duan, Y. Cui, et al., Science 294, 1313 (2001).

L. Schubert, P. Werner, N. D. Zakharov, et al., Appl. Phys. Lett. 84, 4968 (2004).

A. A. Tonkikh, G. E. Cirlin, Yu. B. Samsonenko, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1256 (2004) [Semiconductors 38, 1217 (2004)].

V. G. Dubrovskii, I. P. Soshnikov, G. E. Cirlin, et al., Phys. Status Solidi B 241(7), R30 (2004).

A. Y. Cho and J. R. Arthur, Prog. Solid State Chem. 10, 157 (1975).

R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4(5), 89 (1964).

E. I. Givargizov, Growth of Whisker and Scaly Crystals from Vapors (Nauka, Moscow, 1977) [in Russian].

D. N. Mcllroy, A. Alkhateeb, D. Zhang, et al., J. Phys.: Condens. Matter 16, R415 (2004).

E. I. Givargizov and A. A. Chernov, Kristallografiya 18, 147 (1973) [Sov. Phys. Crystallogr. 18, 89 (1973)].

N. V. Sibirev and V. G. Dubrovskii, Pis’ma Zh. Tekh. Fiz. 30(18), 79 (2004) [Tech. Phys. Lett. 30, 791 (2004)].

V. G. Dubrovskii, N. V. Sibirev, and G. E. Cirlin, Pis’ma Zh. Tekh. Fiz. 30(16), 41 (2004) [Tech. Phys. Lett. 30, 682 (2004)].

V. G. Dubrovskii and N. V. Cibirev, Phys. Rev. E 70, 031604 (2004).

W. Dittmar and K. Neumann, in Growth and Perfection of Crystals, Ed. by R. H. Doremus, B. W. Roberts, and D. Turnball (Wiley, New York, 1958), p. 121.

W. Dittmar and K. Neumann, Z. Elektrochem. 64, 297 (1960).

A. A. Chernov, E. I. Givargizov, Kh. S. Bagdasarov, et al., in Modern Crystallography, Vol. 3: Crystal Growth, Ed. by B. K. Vainshtein, A. A. Chernov, and L. A. Shuvalov (Nauka, Moscow, 1980; Springer, Berlin, 1984).

S. Koshiba, Y. Nakamura, M. Tsuchiya, et al., J. Appl. Phys. 76, 4138 (1994).

T. Takebe, M. Fujii, T. Yamamoto, et al., J. Appl. Phys. 81, 7273 (1997).