Semiconductors
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Growth Modes of GaN Plasma-Assisted MBE Nanowires
Semiconductors - - 2019
Within this work we study the plasma-assisted molecular beam epitaxy of GaN on Si(111) substrate at different substrate temperatures and III/V flux ratios. We present the model, which gives the analytical expressions for the boundaries between the three growth modes: compact layer, nanowires, and absence of growth. We extract the activation energy for nucleation of GaN nanowires on the Si(111) fro...... hiện toàn bộ
Calculation of current-voltage characteristics of gallium arsenide symmetric double-barrier resonance tunneling structures with allowance for the destruction of electron-wave coherence in quantum wells
Semiconductors - - 2004
Magnetic Properties of Vacancies and Doped Chromium in a ZnO Crystal
Semiconductors - Tập 52 - Trang 1047-1050 - 2018
The electronic and magnetic properties of ZnO containing Cr doped atoms and Zn and O vacancies in its crystal structure are theoretically investigated. Calculations are performed using Atomistix Tool Kit and Vienna Ab-initio Simulation Package software implementing the electron density functional theory method with the Hubbard correction. It is shown that the magnetic moment of a defect supercell ...... hiện toàn bộ
Terahertz response of DNA oligonucleotides on the surface of silicon nanostructures
Semiconductors - Tập 50 - Trang 1208-1215 - 2016
The possibility of identifying DNA oligonucleotides deposited onto the region of the edge channels of silicon nanostructures is considered. The role of various THz (terahertz) radiation harmonics of silicon nanostructures in the resonance response of oligonucleotides is analyzed. In particular, this makes it possible to compare single-stranded 100_ and 50_mer DNA oligonucleotides. A technique for ...... hiện toàn bộ
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
Semiconductors - Tập 52 Số 12 - Trang 1564-1567 - 2018
Absorption and the optical gap of a-C:H films produced from acetylene plasmas
Semiconductors - Tập 33 - Trang 451-456 - 1999
Films of amorphous hydrogenized carbon (a-C:H) are prepared by chemical vapor deposition using a dc glow discharge. The absorption is studied over wavelengths of 400–2400 nm. Two Gaussian-like bands are identified with peaks at ∼600 and ∼800 nm. The ratio of the integrated intensities of these bands (I
600/I
800) is found to decrease as the voltage is raised. The changes in the ratio I
600/I
800 a...... hiện toàn bộ
Specific features of NH3 and plasma-assisted MBE in the fabrication of III-N HEMT heterostructures
Semiconductors - Tập 49 - Trang 92-94 - 2015
The specific features of how nitride HEMT heterostructures are produced by NH3 and plasma-assisted (PA) molecular-beam epitaxy (MBE) are considered. It is shown that the use of high-temperature AlN/AlGaN buffer layers grown with ammonia at extremely high temperatures (up to 1150°C) can drastically improve the structural perfection of the active GaN layers and reduce the dislocation density in thes...... hiện toàn bộ
Photosensitive structures based on ZnIn2Se4 single crystals
Semiconductors - Tập 37 - Trang 414-416 - 2003
Photosensitive structures of surface-barrier and homojunction types have been fabricated for the first time on the basis of ZnIn2Se4 single crystals. The spectral dependence of the quantum efficiency of photoconversion has been studied and discussed. It is concluded that the structures are promising for commercial applications.
Whispering gallery modes in a spherical microcavity with a photoluminescent shell
Semiconductors - Tập 49 - Trang 1369-1374 - 2015
Whispering-gallery mode spectra in optical microcavities based on spherical silica particles coated with a thin photoluminescent shell of hydrogenated amorphous silicon carbide are studied. The spectral positions of the whispering-gallery modes for spherical microcavities with a shell are calculated. The dependence of the spectral distance between the TE and TM modes on the shell thickness is exam...... hiện toàn bộ
Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces
Semiconductors - Tập 55 - Trang 137-145 - 2021
A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility in samples of single-crystal SiC thin films grown on the (100), (110), and (111) surfaces of a Si single crystal by the method of the self-consistent substitution of atoms due to the chemical reaction of silicon with carbon-monoxide (CO) gas....... hiện toàn bộ
Tổng số: 5,028
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