Semiconductors

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Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Semiconductors - Tập 50 - Trang 667-670 - 2016
Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan
Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structu...... hiện toàn bộ
Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots
Semiconductors - Tập 47 - Trang 971-977 - 2013
A. G. Vitukhnovskii, A. A. Vashchenko, V. S. Lebedev, R. B. Vasiliev, P. N. Brunkov, D. N. Bychkovskii
The results of an experimental study of organic light-emitting diodes (LEDs) with luminescent layers based on two types of CdSe/CdS semiconductor quantum dots (QDs) with an average CdSe core diameter of 3 and 5 nm and a characteristic CdS shell thickness of 0.5 nm are presented. The dependences of the LED efficiency on the QD concentration are determined. The experimental data are used to determin...... hiện toàn bộ
Influence of tellurium impurity on the Properties of Ga1−X InXAsYSb1−Y (X>0.22) solid solutions
Semiconductors - Tập 36 Số 8 - Trang 855-862 - 2002
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, Yu. P. Yakovlev
Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation
Semiconductors - - 2013
V. V. Vaǐnberg, V. M. Vasetskii, Yu. N. Gudenko, V. N. Poroshin, N. V. Baidus, Б. Н. Звонков
Effect of conjugation with biomolecules on photoluminescence and structural characteristics of CdSe/ZnS quantum dots
Semiconductors - Tập 43 - Trang 775-781 - 2009
L. V. Borkovska, N. E. Korsunska, T. G. Kryshtab, L. P. Germash, E. Yu. Pecherska, S. Ostapenko, G. Chornokur
The photoluminescence and photoluminescence excitation spectra, the X-ray diffraction patterns, and the effect of conjugation with biomolecules upon these characteristics are studied for silanized CdSe/ZnS quantum dots. Along with the band of annihilating excitons in the quantum dots, the luminescence spectra exhibit emission associated with defects. It is established that the emission spectrum of...... hiện toàn bộ
Ultrashallow p +-n junctions in silicon (100): Electron-beam diagnostics of the surface zone
Semiconductors - Tập 32 - Trang 124-130 - 1998
A. N. Andronov, S. V. Robozerov, N. T. Bagraev, L. E. Klyachkin
Ultrashallow p +-n junctions formed in silicon (100) under nonequilibrium impurity diffusion conditions are analyzed by electron-beam diagnostics of the surface zone using a probe of low-to medium-energy electrons. The energy dependence of the radiation conductivity is investigated, along with its distribution over the area of the p +-n junction. This procedure can be used to determine the depth d...... hiện toàn bộ
Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors
Semiconductors - Tập 42 - Trang 1522-1526 - 2008
Yu. A. Chaplygin, E. A. Artamonova, A. Yu. Krasyukov, T. Yu. Krupkina
Heat removal problems, thermal effects, and self-heating phenomena occurring during operation of planar power SOI MOS transistors are considered. Using device-technological simulating methods, the transistor characteristics and safe operation range were studied. It was shown that limitations of the safe operation range are mostly associated with structure self-heating rather than with the parasiti...... hiện toàn bộ
Study of certain properties of Si-Si1−x Gex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy
Semiconductors - Tập 39 - Trang 1141-1146 - 2005
B. Sapaev, A. S. Saidov
The lattice parameters and band gap are experimentally determined for Si-Si1−x Gex structures in relation to the component ratiox (0 ≤ x ≤ 1). The distribution of components over the hickness of the Si1−x Gex alloys and certain photoelectric properties are studied. The experimental data indicate that the structures obtained are of high quality. Graded-gap Si1−x Gex alloys (0 ≤ x ≤ 1) can be used f...... hiện toàn bộ
Structure and properties of Cd x Hg1−x Te-metal contacts
Semiconductors - Tập 43 - Trang 608-611 - 2009
V. I. Stafeev
A metal-semiconductor contact is a composite structure consisting of several nanodimensional layers. The contact properties depend strongly on the technique of metal deposition. A metal forms chemical compounds with the components of Cd x Hg1−x Te (CMT), thus changing the properties of the surface layer. Mercury is accumulated at the interf...... hiện toàn bộ
Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots
Semiconductors - - 2018
A. N. Sofronov, R. M. Balagula, D. A. Firsov, L. E. Vorobjev, A. A. Tonkikh, H. A. Sarkisyan, D. B. Hayrapetyan, L. S. Petrosyan, E. M. Kazaryan
The experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground state to the lowest excited size-quantization state, are reported. An analytical theory of the size quantization of holes in a lens-shaped quantum dot is developed in the context of the adiab...... hiện toàn bộ
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