Semiconductors

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Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Semiconductors - Tập 50 - Trang 667-670 - 2016
Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan
Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structu...... hiện toàn bộ
Ultrashallow p +-n junctions in silicon (100): Electron-beam diagnostics of the surface zone
Semiconductors - Tập 32 - Trang 124-130 - 1998
A. N. Andronov, S. V. Robozerov, N. T. Bagraev, L. E. Klyachkin
Ultrashallow p +-n junctions formed in silicon (100) under nonequilibrium impurity diffusion conditions are analyzed by electron-beam diagnostics of the surface zone using a probe of low-to medium-energy electrons. The energy dependence of the radiation conductivity is investigated, along with its distribution over the area of the p +-n junction. This procedure can be used to determine the depth d...... hiện toàn bộ
Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors
Semiconductors - Tập 42 - Trang 1522-1526 - 2008
Yu. A. Chaplygin, E. A. Artamonova, A. Yu. Krasyukov, T. Yu. Krupkina
Heat removal problems, thermal effects, and self-heating phenomena occurring during operation of planar power SOI MOS transistors are considered. Using device-technological simulating methods, the transistor characteristics and safe operation range were studied. It was shown that limitations of the safe operation range are mostly associated with structure self-heating rather than with the parasiti...... hiện toàn bộ
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters
Semiconductors - Tập 53 Số 8 - Trang 1110-1113 - 2019
V. P. Khvostikov, N. A. Kalyuzhnyy, S. A. Mintairov, N. S. Potapovich, S. V. Sorokina, М. Z. Shvarts
Ion-Beam Synthesis of the Crystalline Ge Phase in SiO x N y Films upon Annealing under High Pressure
Semiconductors - Tập 52 - Trang 268-272 - 2018
I. E. Tyschenko, G. K. Krivyakin, V. A. Volodin
The nucleation of the crystalline Ge phase in SiO x N y films implanted with Ge+ ions with the energy 55 keV to doses of 2.1 × 1015–1.7 × 1016 cm–2 and then annealed at a temperature of Ta = 800–1300°C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipit...... hiện toàn bộ
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
Semiconductors - Tập 52 - Trang 1547-1550 - 2018
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, Z. F. Krasilnik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. G. Reunov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov
Stressed InGaAs/GaAs quantum-well laser structures are grown by gas-phase epitaxy from organometallic compounds on GaAs substrates and artificial Ge/Si substrates based on Si(001) with an epitaxial metamorphic Ge layer. To suppress the relaxation of elastic stresses during the growth of InGaAs quantum wells with a high fraction of In, strain-compensating GaAsP layers are applied. The structural an...... hiện toàn bộ
Determination of Thermodynamic Parameters in the Cu1.95Ni0.05S Phase-Transition Regions
Semiconductors - Tập 52 - Trang 71-77 - 2018
F. F. Aliev, H. A. Hasanov, A. G. Rzaeva, M. B. Jafarov, G. M. Damirov
X-ray diffraction and differential thermal analysis data obtained in the Cu1.95Ni0.05S phase-transition region are analyzed. It is established that the low-temperature rhombic α phase in Cu1.95Ni0.05S transforms to the hexagonal β phase at temperatures of 370–390 K and to the cubic γ phase at temperatures of 740–765 K according to the scheme ...... hiện toàn bộ
Preparation and study of the thermoelectric properties of Fe2TiSn1–x Si x Heusler alloys
Semiconductors - - 2017
Andrei Voronin, V. Yu. Zueva, D. Karpenkov, Dmitry Moskovskikh, Andrei Novitskii, Hiroyuki Miki, Vladimir Khovaylo
Matrix Calculation of the Spectral Characteristics of AII–BVI Semiconductors Doped with Iron-Group Ions
Semiconductors - Tập 52 Số 7 - Trang 821-827 - 2018
И. С. Курчатов, Е. Ф. Кустов
Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms
Semiconductors - - 2013
D. V. Shengurov, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, M. V. Stepikhova, M. N. Drozdov, Z. F. Krasilnik
The fabrication technology and properties of light-emitting Si structures codoped with erbium and oxygen are reported. The layers are deposited onto (100) Si by molecular beam epitaxy (MBE) using an Er-doped silicon sublimation source. The partial pressure of the oxygen-containing gases in the growth chamber of the MBE facility before layer growth is lower than 5 × 10−10 Torr. The oxygen and erbiu...... hiện toàn bộ
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