Semiconductors

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Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Semiconductors - Tập 50 - Trang 667-670 - 2016
Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan
Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structu...... hiện toàn bộ
Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms
Semiconductors - - 2013
D. V. Shengurov, V. Yu. Chalkov, S. A. Denisov, V. G. Shengurov, M. V. Stepikhova, M. N. Drozdov, Z. F. Krasilnik
The fabrication technology and properties of light-emitting Si structures codoped with erbium and oxygen are reported. The layers are deposited onto (100) Si by molecular beam epitaxy (MBE) using an Er-doped silicon sublimation source. The partial pressure of the oxygen-containing gases in the growth chamber of the MBE facility before layer growth is lower than 5 × 10−10 Torr. The oxygen and erbiu...... hiện toàn bộ
Zero-phonon and dipole Γ-X electron transitions in GaAs/AlAs quantum-well heterostructures in a longitudinal electric field
Semiconductors - Tập 34 - Trang 575-582 - 2000
V. Ya. Aleshkin, A. A. Andronov
The probabilities of zero-phonon and dipole electron transitions between the Γ and X subbands in a GaAs/AlAs quantum-well heterostructure subjected to a high longitudinal electric field are calculated. It is shown that the electric field significantly affects the probabilities of both the zero-phonon and the direct dipole Γ-X transitions. In addition, the electric field changes the spectral depend...... hiện toàn bộ
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate
Semiconductors - Tập 51 - Trang 1472-1476 - 2017
R. R. Reznik, K. P. Kotlyar, I. V. Shtrom, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin
The possibility in principle of growing III–V GaAs, AlGaAs, and InAs nanowires (NWs) on a silicon substrate with a nanometer buffer layer of silicon carbide is demonstrated for the first time. The diameter of these NWs is smaller than that of similar NWs grown on a silicon substrate. In particular, the minimum diameter is less than 10 nm for InAs NWs. In addition, it was assumed on the basis of ph...... hiện toàn bộ
Photomemory in CdTe thin-film solar cells
Semiconductors - Tập 33 - Trang 461-462 - 1999
É. N. Voronkov, A. E. Sharonov, V. V. Kolobaev
It is shown that a change in the chemisorption equilibrium on the crystallite boundaries in thin-film photoconverters based on polycrystalline CdTe occurs when they are subjected to radiation. This leads to the appearance of photomemory as a result of a change in the surface potential and a corresponding change in the surface recombination rate. This effect may be the reason for the instability of...... hiện toàn bộ
Effect of uniaxial deformation on the current–voltage characteristic of a p-Ge/n-GaAs heterostructure
Semiconductors - Tập 50 - Trang 1054-1055 - 2016
M. M. Gadzhialiev, Z. Sh. Pirmagomedov, T. N. Efendieva
The effect of uniaxial deformation under a stress of up to 6 kg/cm2 on the current–voltage characteristics of a p-Ge/n-GaAs heterostructure is studied at 300 and 77 K. It is found that both the forward and reverse currents increase with increasing pressure, with the change in the forward current exceeding that in the reverse current by an order of magnitude. Deformation is also examined in relatio...... hiện toàn bộ
Effect of the Boundary Conditions on the High-Frequency Electrical Conductivity of a Thin Conducting Layer in a Longitudinal Magnetic Field
Semiconductors - Tập 54 - Trang 1039-1046 - 2020
I. V. Kuznetsova, O. V. Savenko, P. A. Kuznetsov
The problem of the high-frequency conductivity of a thin conducting layer in a longitudinal magnetic field is solved using a kinetic approach taking into account the mirror-diffusion boundary conditions. The specularity coefficients of the layer surfaces are assumed to be different. An analytical expression is derived for the dimensionless integrated conductivity as a function of the dimensionless...... hiện toàn bộ
Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers
Semiconductors - Tập 47 - Trang 844-848 - 2013
S. A. Blokhin, M. A. Bobrov, N. A. Maleev, A. G. Kuzmenkov, V. V. Stetsenko, M. M. Pavlov, L. Ya. Karachinsky, I. I. Novikov, Yu. M. Zadiranov, A. Yu. Egorov, V. M. Ustinov
The effect of the level of internal and external optical losses on the dynamic characteristics of vertical-cavity surface-emitting lasers (VCSELs) in the spectral region of 850 nm is studied. It is shown that an increase in optical losses leads to a decrease in the speed of laser response and to the predominance of thermal effects, while a decrease in losses for the output of radiation brings abou...... hiện toàn bộ
Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements
Semiconductors - Tập 44 Số 1 - Trang 89-92 - 2010
M. B. Gongalsky, Е. А. Константинова, Л. А. Осминкина, V. Yu. Timoshenko
The concentration dependence of acceptor-state radii in p-Hg0.78Cd0.22Te crystals
Semiconductors - Tập 35 - Trang 33-39 - 2001
V. V. Bogoboyashchii
Hopping conduction in undoped p-Hg0.78Cd0.22Te crystals containing native double-charged acceptors (Hg vacancies) with concentrations of 1016–1018cm−3 was studied. Electrical conduction with a variable hopping range is dominant in the entire concentration range at temperatures below 6–16 K. The measured parameters of this conduction were used to calculate the acceptor-state radius as a function of...... hiện toàn bộ
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