Semiconductors

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Effect of superstoichiometric components on the spectral and kinetic characteristics of the luminescence of ZnSe crystals with isovalent impurities
Semiconductors - Tập 31 - Trang 1041-1045 - 1997
O. V. Vakulenko, V. N. Kravchenko, V. D. Ryzhikov, V. I. Silin, N. G. Starzhinskii
The spectral and kinetic parameters of the X-ray luminescence of ZnSe crystals doped with Zn, Se, and Te were investigated during the growth process at temperatures in the range 80–500 K, and also after annealing in Zn vapor. ZnSe crystals grown from a stoichiometric mixture, or mixture containing chalcogenide impurities, typically produce the minimum level of afterglow and a rapid rise of X-ray l... hiện toàn bộ
Circular polarization of the photoluminescence from a system of two-dimensional A + centers in a magnetic field
Semiconductors - Tập 45 - Trang 776-782 - 2011
P. V. Petrov, Yu. L. Ivánov, N. S. Averkiev
A series of GaAs/AlGaAs quantum well structures with different concentrations of A + centers is studied experimentally by polarized photoluminescence spectroscopy. The spectral dependences of the circular polarization and the energy shifts in a magnetic field exhibit qualitatively different behavior for samples corresponding to the weak and strong localization conditions. The results obtained are ... hiện toàn bộ
Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation
Semiconductors - Tập 54 - Trang 1847-1849 - 2021
E. A. Lubyankina, V. V. Toporov, A. M. Mizerov, S. N. Timoshnev, K. Yu. Shubina, B. H. Bairamov, A. D. Bouravleuv
Investigation of GaN epitaxial layers on silicon substrates is driven by high potential for fabrication of high efficiency and relatively low-cost electronic devises. Growth process of GaN layers on Si by molecular-beam epitaxy is complicated by mutual diffusion of Si and Ga and differences in thermal expansion coefficients and lattice parameters causing large number of defects. To improve the qua... hiện toàn bộ
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Semiconductors - Tập 50 - Trang 667-670 - 2016
Z. N. Sokolova, K. V. Bakhvalov, A. V. Lyutetskiy, N. A. Pikhtin, I. S. Tarasov, L. V. Asryan
Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structu... hiện toàn bộ
Optical transmittance spectra of insulator nanoparticles in bulk heterocomposites
Semiconductors - Tập 43 - Trang 331-339 - 2009
J. N. Kulchin, V. P. Dzyuba, A. V. Shcherbakov
A theoretical model is presented of the visible, near-infrared, and near-ultraviolet transmittance spectra of arbitrarily-shaped small-sized insulator particles embedded in an insulator in relation to the particle dimensions and the radiation frequency. The model is based on a number of assumptions. In the band gap of the nanoparticles, there are allowed energy bands produced by surface defects. T... hiện toàn bộ
Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces
Semiconductors - Tập 55 - Trang 137-145 - 2021
N. T. Bagraev, S. A. Kukushkin, A. V. Osipov, V. V. Romanov, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov
A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility in samples of single-crystal SiC thin films grown on the (100), (110), and (111) surfaces of a Si single crystal by the method of the self-consistent substitution of atoms due to the chemical reaction of silicon with carbon-monoxide (CO) gas.... hiện toàn bộ
Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots
Semiconductors - Tập 47 - Trang 971-977 - 2013
A. G. Vitukhnovskii, A. A. Vashchenko, V. S. Lebedev, R. B. Vasiliev, P. N. Brunkov, D. N. Bychkovskii
The results of an experimental study of organic light-emitting diodes (LEDs) with luminescent layers based on two types of CdSe/CdS semiconductor quantum dots (QDs) with an average CdSe core diameter of 3 and 5 nm and a characteristic CdS shell thickness of 0.5 nm are presented. The dependences of the LED efficiency on the QD concentration are determined. The experimental data are used to determin... hiện toàn bộ
Influence of tellurium impurity on the Properties of Ga1−X InXAsYSb1−Y (X>0.22) solid solutions
Semiconductors - Tập 36 Số 8 - Trang 855-862 - 2002
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, M. A. Sipovskaya, Yu. P. Yakovlev
Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation
Semiconductors - - 2013
V. V. Vaǐnberg, V. M. Vasetskii, Yu. N. Gudenko, V. N. Poroshin, N. V. Baidus, Б. Н. Звонков
Growth of n-Si layers by molecular-beam epitaxy on the substrates heavily doped with boron
Semiconductors - Tập 43 - Trang 181-184 - 2009
V. G. Shengurov, V. Yu. Chalkov, D. V. Shengurov, S. A. Denisov
Epitaxial n-Si layers doped with phosphorus or erbium have been grown by sublimation molecularbeam epitaxy at 500°C on heavily boron-doped p +-type substrates with resistivity ρ = 0.005 Ω cm. Distribution profiles of the B, Er, and O impurity concentrations in the samples were determined by secondary-ion mass spectrometry. A thermal annealing of the substrate in vacuum at 1300°C for 10 min and gro... hiện toàn bộ
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