Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms

Semiconductors - 2013
D. V. Shengurov1, V. Yu. Chalkov2, S. A. Denisov2, V. G. Shengurov2, M. V. Stepikhova1, M. N. Drozdov1, Z. F. Krasilnik1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, Russia
2Physical-Technical Research Institute, Nizhni Novgorod State University, Nizhni Novgorod, Russia

Tóm tắt

The fabrication technology and properties of light-emitting Si structures codoped with erbium and oxygen are reported. The layers are deposited onto (100) Si by molecular beam epitaxy (MBE) using an Er-doped silicon sublimation source. The partial pressure of the oxygen-containing gases in the growth chamber of the MBE facility before layer growth is lower than 5 × 10−10 Torr. The oxygen and erbium concentrations in the Si layers grown at 450°C is ∼1 × 1019 and 1018 cm−3, respectively. The silicon epitaxial layers codoped with erbium and oxygen have high crystal quality and yield effective photoluminescence and electroluminescence signals with the dominant optically active Er-1 center forming upon postgrowth annealing at a temperature of 800°C.

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Semiconductors

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