Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors
Tóm tắt
Heat removal problems, thermal effects, and self-heating phenomena occurring during operation of planar power SOI MOS transistors are considered. Using device-technological simulating methods, the transistor characteristics and safe operation range were studied. It was shown that limitations of the safe operation range are mostly associated with structure self-heating rather than with the parasitic bipolar transistor.
Tài liệu tham khảo
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