Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers

Semiconductors - Tập 50 - Trang 667-670 - 2016
Z. N. Sokolova1, K. V. Bakhvalov2, A. V. Lyutetskiy1, N. A. Pikhtin2, I. S. Tarasov2, L. V. Asryan3
1Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
3Virginia Polytechnic Institute and State University, Blacksburg, USA

Tóm tắt

Three laser structures with a single strained InGaAs quantum well of different depths and a GaAs or Al0.1Ga0.9As waveguide region are grown by metal-organic chemical vapor deposition. Using the experimentally determined values of the threshold current density and internal differential quantum efficiency, the velocity of electron capture into the quantum well is calculated for each of these structures. It is found that the capture velocity into deep quantum wells is significantly lower than into shallow ones.

Tài liệu tham khảo

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