Progress in Photovoltaics: Research and Applications

  1062-7995

  1099-159X

  Anh Quốc

Cơ quản chủ quản:  WILEY , John Wiley and Sons Ltd

Lĩnh vực:
Condensed Matter PhysicsElectrical and Electronic EngineeringElectronic, Optical and Magnetic MaterialsRenewable Energy, Sustainability and the Environment

Các bài báo tiêu biểu

Solar cell efficiency tables (Version 45)
Tập 23 Số 1 - Trang 1-9 - 2015
Martin A. Green, Keith Emery, Yoshihiro Hishikawa, Wilhelm Warta, Ewan D. Dunlop
19·9%‐efficient ZnO/CdS/CuInGaSe<sup>2</sup> solar cell with 81·2% fill factor
Tập 16 Số 3 - Trang 235-239 - 2008
Ingrid Repins, Miguel Á. Contreras, Brian Egaas, Clay DeHart, John Scharf, Craig L. Perkins, Bobby To, R. Noufi
AbstractWe report a new record total‐area efficiency of 19·9% for CuInGaSe2‐based thin‐film solar cells. Improved performance is due to higher fill factor. The device was made by three‐stage co‐evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented. Published in 2008 by John Wiley & Sons, Ltd.
Thin film solar cell with 8.4% power conversion efficiency using an earth‐abundant Cu<sub>2</sub>ZnSnS<sub>4</sub> absorber
Tập 21 Số 1 - Trang 72-76 - 2013
Byungha Shin, Oki Gunawan, Yu Zhu, N. A. Bojarczuk, S. Jay Chey, Supratik Guha
ABSTRACTUsing vacuum process, we fabricated Cu2ZnSnS4 solar cells with 8.4% efficiency, a number independently certified by an external, accredited laboratory. This is the highest efficiency reported for pure sulfide Cu2ZnSnS4 prepared by any method. Consistent with literature, the optimal composition is Cu‐poor and Zn‐rich despite the precipitation of secondary phases (e.g., ZnS). Despite a very thin absorber thickness (~600 nm), a reasonably good short‐circuit current was obtained. Time‐resolved photoluminescence measurements suggest a minority carrier‐diffusion length on the order of several hundreds of nanometers and relatively good collection of photo‐carriers across the entire absorber thickness. Copyright © 2011 John Wiley & Sons, Ltd.
Thin‐film solar cells: device measurements and analysis
Tập 12 Số 2-3 - Trang 155-176 - 2004
Steven Hegedus, William N. Shafarman
AbstractCharacterization of amorphous Si, CdTe, and Cu(InGa)Se2‐based thin‐film solar cells is described with focus on the deviations in device behavior from standard device models. Quantum efficiency (QE), current–voltage (JV), and admittance measurements are reviewed with regard to aspects of interpretation unique to the thin‐film solar cells. In each case, methods are presented for characterizing parasitic effects common in these solar cells in order to identify loss mechanisms and reveal fundamental device properties. Differences between these thin‐film solar cells and idealized devices are largely due to a high density of defect states in the absorbing layers and to parasitic losses due to the device structure and contacts. There is also commonly a voltage‐dependent photocurrent collection which affects JV and QE measurements. The voltage and light bias dependence of these measurements can be used to diagnose specific losses. Examples of how these losses impact the QE, JV, and admittance characterization are shown for each type of solar cell. Copyright © 2004 John Wiley & Sons, Ltd.
Solar cell efficiency tables (version 54)
Tập 27 Số 7 - Trang 565-575 - 2019
Martin A. Green, Ewan D. Dunlop, Dean H. Levi, Jochen Hohl‐Ebinger, Masahiro Yoshita, Anita Ho‐Baillie
AbstractConsolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since January 2019 are reviewed.
Properties of 19.2% efficiency ZnO/CdS/CuInGaSe<sub>2</sub> thin‐film solar cells
Tập 11 Số 4 - Trang 225-230 - 2003
K. Ramanathan, Miguel Á. Contreras, Craig L. Perkins, S. E. Asher, Falah S. Hasoon, J. Keane, David L. Young, M.J. Romero, Wyatt K. Metzger, R. Noufi, Jas S. Ward, A. Duda
AbstractWe report the growth and characterization of record‐efficiency ZnO/CdS/CuInGaSe2 thin‐film solar cells. Conversion efficiencies exceeding 19% have been achieved for the first time, and this result indicates that the 20% goal is within reach. Details of the experimental procedures are provided, and material and device characterization data are presented. Published in 2003 by John Wiley & Sons, Ltd.
Comparative study of maximum power point tracking algorithms
Tập 11 Số 1 - Trang 47-62 - 2003
D. P. Hohm, Michael Ropp
AbstractMaximum power point trackers (MPPTs) play an important role in photovoltaic (PV) power systems because they maximize the power output from a PV system for a given set of conditions, and therefore maximize the array efficiency. Thus, an MPPT can minimize the overall system cost. MPPTs find and maintain operation at the maximum power point, using an MPPT algorithm. Many such algorithms have been proposed. However, one particular algorithm, the perturb‐and‐observe (P&O) method, claimed by many in the literature to be inferior to others, continues to be by far the most widely used method in commercial PV MPPTs. Part of the reason for this is that the published comparisons between methods do not include an experimental comparison between multiple algorithms with all algorithms optimized and a standardized MPPT hardware. This paper provides such a comparison. MPPT algorithm performance is quantified through the MPPT efficiency. In this work, results are obtained for three optimized algorithms, using a microprocessor‐controlled MPPT operating from a PV array and also a PV array simulator. It is found that the P&O method, when properly optimized, can have MPPT efficiencies well in excess of 97%, and is highly competitive against other MPPT algorithms. Copyright © 2002 John Wiley & Sons, Ltd.
Device characteristics of a 10.1% hydrazine‐processed Cu<sub>2</sub>ZnSn(Se,S)<sub>4</sub> solar cell
Tập 20 Số 1 - Trang 6-11 - 2012
D. Aaron R. Barkhouse, Oki Gunawan, Tayfun Gokmen, Teodor K. Todorov, David B. Mitzi
ABSTRACTA power conversion efficiency record of 10.1% was achieved for kesterite absorbers, using a Cu2ZnSn(Se,S)4 thin‐film solar cell made by hydrazine‐based solution processing. Key device characteristics were compiled, including light/dark J–V, quantum efficiency, temperature dependence of Voc and series resistance, photoluminescence, and capacitance spectroscopy, providing important insight into how the devices compare with high‐performance Cu(In,Ga)Se2. The record kesterite device was shown to be primarily limited by interface recombination, minority carrier lifetime, and series resistance. The new level of device performance points to the significant promise of the kesterites as an emerging and commercially interesting thin‐film technology. Copyright © 2011 John Wiley & Sons, Ltd.
Solar cell efficiency tables (version 49)
Tập 25 Số 1 - Trang 3-13 - 2017
Martin A. Green, Keith Emery, Yoshihiro Hishikawa, Wilhelm Warta, Ewan D. Dunlop, Dean H. Levi, Anita Ho‐Baillie
AbstractConsolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since June 2016 are reviewed. Copyright © 2016 John Wiley & Sons, Ltd.
Kesterites—a challenging material for solar cells
Tập 20 Số 5 - Trang 512-519 - 2012
Susanne Siebentritt, Susan Schorr
ABSTRACTKesterite materials (Cu2ZnSn(S,Se)4) are made from non‐toxic, earth‐abundant and low‐cost raw materials. We summarise here the structural and electronic material data relevant for the solar cells. The equilibrium structure of both Cu2ZnSnS4 and Cu2ZnSnSe4 is the kesterite structure. However, the stannite structure has only a slightly lower binding energy. Because the band gap of the stannite is predicted to be about 100 meV lower than the kesterite band gap, any admixture of stannite will hurt the solar cells. The band gaps of Cu2ZnSnS4 and Cu2ZnSnSe4 are 1.5 and 1.0 eV, respectively. Hardly any experiments on defects are available. Theoretically, the CuZn antisite acceptor is predicted as the most probable defect. The existence region of the kesterite phase is smaller compared with that of chalcopyrites. This makes secondary phases a serious challenge in the development of solar cells. Copyright © 2012 John Wiley & Sons, Ltd.