Device characteristics of a 10.1% hydrazine‐processed Cu2ZnSn(Se,S)4 solar cell

Progress in Photovoltaics: Research and Applications - Tập 20 Số 1 - Trang 6-11 - 2012
D. Aaron R. Barkhouse1, Oki Gunawan1, Tayfun Gokmen1, Teodor K. Todorov1, David B. Mitzi1
1IBM Thomas J. Watson Research Center, 1101 Kitchawan Rd, Yorktown Heights, NY 10598, USA

Tóm tắt

ABSTRACT

A power conversion efficiency record of 10.1% was achieved for kesterite absorbers, using a Cu2ZnSn(Se,S)4 thin‐film solar cell made by hydrazine‐based solution processing. Key device characteristics were compiled, including light/dark J–V, quantum efficiency, temperature dependence of Voc and series resistance, photoluminescence, and capacitance spectroscopy, providing important insight into how the devices compare with high‐performance Cu(In,Ga)Se2. The record kesterite device was shown to be primarily limited by interface recombination, minority carrier lifetime, and series resistance. The new level of device performance points to the significant promise of the kesterites as an emerging and commercially interesting thin‐film technology. Copyright © 2011 John Wiley & Sons, Ltd.

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Progress in Photovoltaics: Research and Applications

Tập 20 Số 1

6-11

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