19·9%‐efficient ZnO/CdS/CuInGaSe<sup>2</sup> solar cell with 81·2% fill factor
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Tài liệu tham khảo
US Patent No. 5 441 897 (15 August 1995) and US Patent No. 5 436 204 (25 July 1995).
ContrerasMA TuttleJR GaborA TennantA RamanathanK AsherS FranzA KeaneJ WangL ScofieldJ NoufiR.High efficiency Cu(In Ga)Se2‐based solar cells: processing of novel absorber structures.Conference Record of the 24th IEEE Photovoltaics Specialists Conference1994;68–75.
Kohara N, Preparation of device‐quality Cu(In,Ga)Se2 thin films deposited by coevaporation with composition monitor, Japanese Journal of Applied Physics, 34, L1141, 10.1143/JJAP.34.L1141
AbushamaJ NoufiR JohnstonS WardJS WuX.Improved performance in CuInSe2and surface‐modified CuGaSe2solar cells.Conference Record of the 31st IEEE Photovoltaics Specialists Conference2005;299–302.
See for examplehttp://www.nrel.gov/pv/measurements/device_performance.html
Kessler J, 2001, Baseline Cu(In,Ga)Se2 device production: control and statistical significance, Solar Energy Materials and Solar Cells, 67, 67, 10.1016/S0927-0248(00)00264-6