19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
Tóm tắt
We report a new record total‐area efficiency of 19·9% for CuInGaSe2‐based thin‐film solar cells. Improved performance is due to higher fill factor. The device was made by three‐stage co‐evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented. Published in 2008 by John Wiley & Sons, Ltd.
Từ khóa
Tài liệu tham khảo
US Patent No. 5 441 897 (15 August 1995) and US Patent No. 5 436 204 (25 July 1995).
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AbushamaJ NoufiR JohnstonS WardJS WuX.Improved performance in CuInSe2and surface‐modified CuGaSe2solar cells.Conference Record of the 31st IEEE Photovoltaics Specialists Conference2005;299–302.
See for examplehttp://www.nrel.gov/pv/measurements/device_performance.html
Kessler J, 2001, Baseline Cu(In,Ga)Se2 device production: control and statistical significance, Solar Energy Materials and Solar Cells, 67, 67, 10.1016/S0927-0248(00)00264-6