Thin‐film solar cells: device measurements and analysis

Progress in Photovoltaics: Research and Applications - Tập 12 Số 2-3 - Trang 155-176 - 2004
Steven Hegedus1, William N. Shafarman1
1Institute of Energy Conversion, University of Delaware, Newark, DE 19716‐3820, USA

Tóm tắt

AbstractCharacterization of amorphous Si, CdTe, and Cu(InGa)Se2‐based thin‐film solar cells is described with focus on the deviations in device behavior from standard device models. Quantum efficiency (QE), current–voltage (J–V), and admittance measurements are reviewed with regard to aspects of interpretation unique to the thin‐film solar cells. In each case, methods are presented for characterizing parasitic effects common in these solar cells in order to identify loss mechanisms and reveal fundamental device properties. Differences between these thin‐film solar cells and idealized devices are largely due to a high density of defect states in the absorbing layers and to parasitic losses due to the device structure and contacts. There is also commonly a voltage‐dependent photocurrent collection which affects J–V and QE measurements. The voltage and light bias dependence of these measurements can be used to diagnose specific losses. Examples of how these losses impact the QE, J–V, and admittance characterization are shown for each type of solar cell. Copyright © 2004 John Wiley & Sons, Ltd.

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Progress in Photovoltaics: Research and Applications

Tập 12 Số 2-3

155-176

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