Progress in Photovoltaics: Research and Applications
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Current transport studies of amorphous n/p junctions and its application in a‐Si:H/HIT‐type tandem cellsAbstract This paper presents an understanding of the fundamental carrier transport mechanism in hydrogenated amorphous silicon (a‐Si:H)‐based n/p junctions. These n/p junctions are, then, used as tunneling and recombination junctions (TRJ) in tandem solar cells, which were constructed by stacking the a‐Si:H‐based solar cell on the heterojunction with intrinsic thin layer (HIT) cell. First, the effect of activation energy (E a ) and Urbach parameter (E u ) of n‐type hydrogenated amorphous silicon (a‐Si:H(n)) on current transport in an a‐Si:H‐based n/p TRJ has been investigated. The photoluminescence spectra and temperature‐dependent current–voltage characteristics in dark condition indicates that the tunneling is the dominant carrier transport mechanism in our a‐Si:H‐based n/p‐type TRJ. The fabrication of a tandem cell structure consists of an a‐Si:H‐based top cell and an HIT‐type bottom cell with the a‐Si:H‐based n/p junction developed as a TRJ in between. The development of a‐Si:H‐based n/p junction as a TRJ leads to an improved a‐Si:H/HIT‐type tandem cell with a better open circuit voltage (V oc ), fill factor (FF ), and efficiency. The improvements in the cell performance was attributed to the wider band‐tail states in the a‐Si:H(n) layer that helps to an enhanced tunneling and recombination process in the TRJ. The best photovoltage parameters of the tandem cell were found to be V oc = 1430 mV, short circuit current density = 10.51 mA/cm2 , FF = 0.65, and efficiency = 9.75%. Copyright © 2015 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 24 Số 1 - Trang 52-58 - 2016
Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cellsABSTRACT Cu2 ZnSnS4 (CZTS) is a promising thin‐film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2 . We introduce a two‐step process for fabrication of CZTS films, involving reactive sputtering of a Cu‐Zn‐Sn‐S precursor followed by rapid annealing. X‐ray diffraction and Raman measurements of the sputtered precursor suggest that it is in a disordered, metastable CZTS phase, similar to the high‐temperature cubic modification reported for CZTS. A few minutes of annealing at 550 °C are sufficient to produce crystalline CZTS films with grain sizes in the micrometer range. The first reported device using this approach has an AM1.5 efficiency of 4.6%, with J sc and V oc both appearing to be limited by interface recombination. Copyright © 2012 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 22 Số 1 - Trang 10-17 - 2014
Optical properties of intrinsic silicon at 300 KAbstract An updated tabulation is presented of the optical properties of intrinsic silicon relevant to solar cell calculations. the absorption coeficient, refractive index and extinction coeficient at 300 K are tabulated over the 0.25‐1.45 μm wavelength range at 0.01 μm intervals.
Progress in Photovoltaics: Research and Applications - Tập 3 Số 3 - Trang 189-192 - 1995
Solar cell efficiency tables (version 35)Abstract Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright © 2010 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 18 Số 2 - Trang 144-150 - 2010
Study on ALD In2S3/Cu(In,Ga)Se2interface formation
Progress in Photovoltaics: Research and Applications - Tập 13 Số 3 - Trang 179-193 - 2005
Spray-ILGAR indium sulfide buffers for Cu(In,Ga)(S,Se)2 solar cells
Progress in Photovoltaics: Research and Applications - Tập 13 Số 7 - Trang 607-616 - 2005
Improved performance in ZnO/CdS/CuGaSe2 thin‐film solar cellsAbstract We report the growth and characterization of improved efficiency wide‐bandgap ZnO/CdS/CuGaSe2 thin‐film solar cells. The CuGaSe2 absorber thickness was intentionally decreased to better match depletion widths indicated by drive‐level capacitance profiling data. A total‐area efficiency of 9·5% was achieved with a fill factor of 70·8% and a V oc of 910 mV. Published in 2003 by John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 11 Số 8 - Trang 535-541 - 2003
Highly‐efficient Cd‐free CuInS2 thin‐film solar cells and mini‐modules with Zn(S,O) buffer layers prepared by an alternative chemical bath processAbstract Recent progress in fabricating Cd‐ and Se‐free wide‐gap chalcopyrite thin‐film solar devices with Zn(S,O) buffer layers prepared by an alternative chemical bath process (CBD) using thiourea as complexing agent is discussed. Zn(S,O) has a larger band gap (E g = 3·6–3·8 eV) than the conventional buffer material CdS (E g = 2·4 eV) currently used in chalcopyrite‐based thin films solar cells. Thus, Zn(S,O) is a potential alternative buffer material, which already results in Cd‐free solar cell devices with increased spectral response in the blue wavelength region if low‐gap chalcopyrites are used. Suitable conditions for reproducible deposition of good‐quality Zn(S,O) thin films on wide‐gap CuInS2 (‘CIS’) absorbers have been identified for an alternative, low‐temperature chemical route. The thickness of the different Zn(S,O) buffers and the coverage of the CIS absorber by those layers as well as their surface composition were controlled by scanning electron microscopy, X‐ray photoelectron spectroscopy, and X‐ray excited Auger electron spectroscopy. The minimum thickness required for a complete coverage of the rough CIS absorber by a Zn(S,O) layer deposited by this CBD process was estimated to ∼15 nm. The high transparency of this Zn(S,O) buffer layer in the short‐wavelength region leads to an increase of ∼1 mA/cm2 in the short‐circuit current density of corresponding CIS‐based solar cells. Active area efficiencies exceeding 11·0% (total area: 10·4%) have been achieved for the first time, with an open circuit voltage of 700·4 mV, a fill factor of 65·8% and a short‐circuit current density of 24·5 mA/cm2 (total area: 22·5 mA/cm2 ). These results are comparable to the performance of CdS buffered reference cells. First integrated series interconnected mini‐modules on 5 × 5 cm2 substrates have been prepared and already reach an efficiency (active area: 17·2 cm2 ) of above 8%. Copyright © 2006 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 14 Số 6 - Trang 499-511 - 2006
High‐efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)Abstract This paper presents optimization studies on the formation of indium sulfide buffer layers for high‐efficiency copper indium gallium diselenide (CIGS) thin‐film solar cells with atomic layer chemical vapour deposition (ALCVD) from separate pulses of indium acetylacetonate and hydrogen sulfide. A parametric study of the effect of deposition temperature between 160° and 260°C and thickness (15–30 nm) shows an optimal value at about 220°C for a layer thickness of 30 nm, leading to an efficiency of 16·4%. Analysis of the device shows that indium sulfide layers are characterised by an improvement of the blue response of the cells compared with a standard CdS‐processed cell, due to a high apparent band gap (2·7–2·8 eV), higher open‐circuit voltages (up to 665 mV) and fill factor (78%). This denotes high interface quality. Atomic diffusion processes of sodium and copper in the buffer layer are demonstrated. Copyright © 2003 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 11 Số 7 - Trang 437-443 - 2003
SHORT COMMUNICATION: ACCELERATED PUBLICATION: Diode characteristics in state-of-the-art ZnO/CdS/Cu(In1?xGax)Se2 solar cells
Progress in Photovoltaics: Research and Applications - Tập 13 Số 3 - Trang 209-216 - 2005
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