Progress in Photovoltaics: Research and Applications
Công bố khoa học tiêu biểu
* Dữ liệu chỉ mang tính chất tham khảo
Sắp xếp:
Kesterites—a challenging material for solar cells ABSTRACT Kesterite materials (Cu2 ZnSn(S,Se)4 ) are made from non‐toxic, earth‐abundant and low‐cost raw materials. We summarise here the structural and electronic material data relevant for the solar cells. The equilibrium structure of both Cu2 ZnSnS4 and Cu2 ZnSnSe4 is the kesterite structure. However, the stannite structure has only a slightly lower binding energy. Because the band gap of the stannite is predicted to be about 100 meV lower than the kesterite band gap, any admixture of stannite will hurt the solar cells. The band gaps of Cu2 ZnSnS4 and Cu2 ZnSnSe4 are 1.5 and 1.0 eV, respectively. Hardly any experiments on defects are available. Theoretically, the CuZn antisite acceptor is predicted as the most probable defect. The existence region of the kesterite phase is smaller compared with that of chalcopyrites. This makes secondary phases a serious challenge in the development of solar cells. Copyright © 2012 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 20 Số 5 - Trang 512-519 - 2012
Textured monocrystalline thin‐film Si cells from the porous silicon (PSI) process Abstract We have fabricated a textured monocrystalline Si solar cell with a thickness of 15·5 μm and a confirmed efficiency of 12·2% using porous silicon (PSI) for layer transfer. The PSI process avoids photolithography and high‐temperature oxidation. The cell has a surface that is textured with randomly positioned inverted pyramids for light trapping. The device does not yet fully exploit the light‐trapping capability of this film shape, owing to a small back‐surface reflectance. Copyright © 2001 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 9 Số 3 - Trang 217-221 - 2001
Chemical natures and distributions of metal impurities in multicrystalline silicon materials Abstract We present a comprehensive summary of our observations of metal‐rich particles in multicrystalline silicon (mc‐Si) solar cell materials from multiple vendors, including directionally‐solidified ingot‐grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal‐rich particles are assessed by synchrotron‐based analytical x‐ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal‐rich particles can be observed (metal silicide nanoprecipitates and metal‐rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc‐Si materials can largely be explained by variations in crystal growth parameters, structural defect types, and contamination sources. Copyright © 2006 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 14 Số 6 - Trang 513-531 - 2006
Solar cell efficiency tables (version 49) Abstract Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined, and new entries since June 2016 are reviewed. Copyright © 2016 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 25 Số 1 - Trang 3-13 - 2017
The effect of Zn<sub>1−<i>x</i></sub>Sn<i><sub>x</sub></i>O<i><sub>y</sub></i> buffer layer thickness in 18.0% efficient Cd‐free Cu(In,Ga)Se<sub>2</sub> solar cells ABSTRACT The influence of the thickness of atomic layer deposited Zn1−x Snx y 2 solar cells are investigated. The amorphous Zn1−x Snx y 1−x Snx y 1−x Snx y
Progress in Photovoltaics: Research and Applications - Tập 21 Số 8 - Trang 1588-1597 - 2013
Thin‐film solar cells: device measurements and analysis Abstract Characterization of amorphous Si, CdTe, and Cu(InGa)Se2 ‐based thin‐film solar cells is described with focus on the deviations in device behavior from standard device models. Quantum efficiency (QE), current–voltage (J –V ), and admittance measurements are reviewed with regard to aspects of interpretation unique to the thin‐film solar cells. In each case, methods are presented for characterizing parasitic effects common in these solar cells in order to identify loss mechanisms and reveal fundamental device properties. Differences between these thin‐film solar cells and idealized devices are largely due to a high density of defect states in the absorbing layers and to parasitic losses due to the device structure and contacts. There is also commonly a voltage‐dependent photocurrent collection which affects J –V and QE measurements. The voltage and light bias dependence of these measurements can be used to diagnose specific losses. Examples of how these losses impact the QE, J –V , and admittance characterization are shown for each type of solar cell. Copyright © 2004 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 12 Số 2-3 - Trang 155-176 - 2004
High‐throughput method to deposit continuous composition spread Sb<sub>2</sub>(Se<sub>x</sub>S<sub>1 − x</sub>)<sub>3</sub>thin film for photovoltaic application Abstract Sb2 (Sex S1 − x )3 alloy materials with tunable bandgaps combining the advantages of Sb2 S3 and Sb2 Se3 showed high potential in low cost, non‐toxicity, and high stability solar cells. The composition dependence of device performance becomes indispensable to study. However, traditional approaches often implement 1 composition at a time, which easily lead to long period and systematic errors. The present work developed a high‐throughput experimental method, close‐space dual‐plane‐source evaporation (CDE) method, to successfully deposit continuous composition spread Sb2 (Sex S1 − x )3 library at 1 time. On the surface of the obtained film, thex value of Se content evolved from 0.09 to 0.84 by a series of complementary characterizations. At depth direction, the alloy film kept high crystallinity and composition consistency. Solar cell arrays (19 × 6) were fabricated to investigate the relationship between compositions and performances. As the increase of Se content, the conversion efficiency first increased from 1.8% to 5.6% and then decreased to 5%. The Voc and Jsc demonstrated an opposite evolution trend. The champion device with the composition of Sb2 (Se0.68 S0.32 )3 achieved the Voc and Jsc trade‐off exceeding the performances of Sb2 S3 (2.43%) and Sb2 Se3 (4.97%) devices. Cryogenic and transient characterizations were utilized to investigate the distinct performance evolution mechanism. There existed shallow defect levels in Se‐rich alloys and deep defects in sulfur‐rich ones. The widely tuned absorber compositions combined with distinct defect characters induced to the large variation of device performance. The present continuous composition spread Sb2 (Sex S1 − x )3 film and their CDE fabrication technique were expected to efficiently screen materials and promote the development of antimony chalcogenide solar cells.
Progress in Photovoltaics: Research and Applications - Tập 26 Số 4 - Trang 281-290 - 2018
Solar cells utilizing small molecular weight organic semiconductors Abstract In this review, we focus on the field of organic photovoltaic cells based on small molecular weight materials. In particular, we discuss the physical processes that lead to photocurrent generation in organic solar cells, as well as the various architectures employed to optimize device performance. These include the donor–acceptor heterojunction for efficient exciton dissociation, the exciton blocking layer, the mixed or bulk heterojunction, and the stacked or tandem cell. We show how the choice of materials with known energy levels and absorption spectra affect device performance, particularly the open‐circuit voltage and short‐circuit current density. We also discuss the typical materials and growth techniques used to fabricate devices, as well as the issue of device stability, all of which are critical for the commercialization of low‐cost and high‐performance organic solar cells. Copyright © 2007 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 15 Số 8 - Trang 659-676 - 2007
Electronic structure of the Zn(O,S)/Cu(In,Ga)Se<sub>2</sub>thin-film solar cell interface
Progress in Photovoltaics: Research and Applications - Tập 24 Số 8 - Trang 1142-1148 - 2016
Development of thin‐film Cu(In,Ga)Se<sub>2</sub> and CdTe solar cells Abstract Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p ‐type absorber layers of optimum optoelectronic properties and n ‐type wide‐bandgap partner layers to form the p –n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.
Progress in Photovoltaics: Research and Applications - Tập 12 Số 2-3 - Trang 93-111 - 2004
Tổng số: 42
- 1
- 2
- 3
- 4
- 5