Progress in Photovoltaics: Research and Applications

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Current transport studies of amorphous n/p junctions and its application in a‐Si:H/HIT‐type tandem cells
Progress in Photovoltaics: Research and Applications - Tập 24 Số 1 - Trang 52-58 - 2016
Youngseok Lee, Vinh Ai Dao, S.M. Iftiquar, Sangho Kim, Junsin Yi
AbstractThis paper presents an understanding of the fundamental carrier transport mechanism in hydrogenated amorphous silicon (a‐Si:H)‐based n/p junctions. These n/p junctions are, then, used as tunneling and recombination junctions (TRJ) in tandem solar cells, which were constructed by stacking the a‐Si:H‐based solar cell on the heterojunction with intrinsic thin ...... hiện toàn bộ
Rapid annealing of reactively sputtered precursors for Cu2ZnSnS4 solar cells
Progress in Photovoltaics: Research and Applications - Tập 22 Số 1 - Trang 10-17 - 2014
Jonathan J. Scragg, Tove Ericson, Xavier Fontané, Víctor Izquierdo‐Roca, A. Pérez-Rodrı́guez, Tomáš Kubart, Marika Edoff, Charlotte Platzer‐Björkman
ABSTRACTCu2ZnSnS4 (CZTS) is a promising thin‐film absorber material that presents some interesting challenges in fabrication when compared with Cu(In,Ga)Se2. We introduce a two‐step process for fabrication of CZTS films, involving reactive sputtering of a Cu‐Zn‐Sn‐S precursor followed by rapid annealing...... hiện toàn bộ
Optical properties of intrinsic silicon at 300 K
Progress in Photovoltaics: Research and Applications - Tập 3 Số 3 - Trang 189-192 - 1995
Martin A. Green, Mark Keevers
AbstractAn updated tabulation is presented of the optical properties of intrinsic silicon relevant to solar cell calculations. the absorption coeficient, refractive index and extinction coeficient at 300 K are tabulated over the 0.25‐1.45 μm wavelength range at 0.01 μm intervals.
Solar cell efficiency tables (version 35)
Progress in Photovoltaics: Research and Applications - Tập 18 Số 2 - Trang 144-150 - 2010
Martin A. Green, Keith Emery, Yoshihiro Hishikawa, Wilhelm Warta
AbstractConsolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright © 2010 John Wiley & Sons, Ltd.
Study on ALD In2S3/Cu(In,Ga)Se2interface formation
Progress in Photovoltaics: Research and Applications - Tập 13 Số 3 - Trang 179-193 - 2005
Jan Sterner, Johan Malmström, Lars Stolt
Spray-ILGAR indium sulfide buffers for Cu(In,Ga)(S,Se)2 solar cells
Progress in Photovoltaics: Research and Applications - Tập 13 Số 7 - Trang 607-616 - 2005
N. Allsop, Antje Schönmann, H.‐J. Muffler, Marcus Bär, Martha Ch. Lux‐Steiner, Ch.‐H. Fischer
Improved performance in ZnO/CdS/CuGaSe2 thin‐film solar cells
Progress in Photovoltaics: Research and Applications - Tập 11 Số 8 - Trang 535-541 - 2003
David L. Young, J. Keane, A. Duda, J. AbuShama, Craig L. Perkins, M.J. Romero, R. Noufi
AbstractWe report the growth and characterization of improved efficiency wide‐bandgap ZnO/CdS/CuGaSe2 thin‐film solar cells. The CuGaSe2 absorber thickness was intentionally decreased to better match depletion widths indicated by drive‐level capacitance profiling data. A total‐area efficiency of 9·5% was achieved with a fil...... hiện toàn bộ
Highly‐efficient Cd‐free CuInS2 thin‐film solar cells and mini‐modules with Zn(S,O) buffer layers prepared by an alternative chemical bath process
Progress in Photovoltaics: Research and Applications - Tập 14 Số 6 - Trang 499-511 - 2006
A. Ennaoui, Marcus Bär, J. Klaer, Timo Kropp, Rodrigo Sáez‐Araoz, M. Lux‐Steiner
AbstractRecent progress in fabricating Cd‐ and Se‐free wide‐gap chalcopyrite thin‐film solar devices with Zn(S,O) buffer layers prepared by an alternative chemical bath process (CBD) using thiourea as complexing agent is discussed. Zn(S,O) has a larger band gap (Eg = 3·6–3·8 eV) than the conventional buffer material C...... hiện toàn bộ
High‐efficiency copper indium gallium diselenide (CIGS) solar cells with indium sulfide buffer layers deposited by atomic layer chemical vapor deposition (ALCVD)
Progress in Photovoltaics: Research and Applications - Tập 11 Số 7 - Trang 437-443 - 2003
Negar Naghavi, S. Spiering, Michael Powalla, B. Cavana, Daniel Lincot
AbstractThis paper presents optimization studies on the formation of indium sulfide buffer layers for high‐efficiency copper indium gallium diselenide (CIGS) thin‐film solar cells with atomic layer chemical vapour deposition (ALCVD) from separate pulses of indium acetylacetonate and hydrogen sulfide. A parametric study of the effect of deposition temperature betwee...... hiện toàn bộ
SHORT COMMUNICATION: ACCELERATED PUBLICATION: Diode characteristics in state-of-the-art ZnO/CdS/Cu(In1?xGax)Se2 solar cells
Progress in Photovoltaics: Research and Applications - Tập 13 Số 3 - Trang 209-216 - 2005
Miguel Á. Contreras, K. Ramanathan, J. AbuShama, Falah S. Hasoon, David L. Young, Brian Egaas, R. Noufi
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