Improved performance of Ge‐alloyed CZTGeSSe thin‐film solar cells through control of elemental losses

Progress in Photovoltaics: Research and Applications - Tập 23 Số 3 - Trang 376-384 - 2015
Charles J. Hages1, Sergiu Levcenco2, Caleb K. Miskin1, Jan H. Alsmeier2, Daniel Abou‐Ras2, Regan G. Wilks2, Marcus Bär3,2, Thomas Unold2, Rakesh Agrawal1
1School of Chemical Engineering, Purdue University, West Lafayette, IN, USA
2Solar Energy Research Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH Berlin Germany
3Brandenburgische Technische Universität Cottbus Institut für Physik und Chemie Cottbus Germany

Tóm tắt

AbstractNanocrystal‐based Cu2Zn(SnyGe1‐y)(SxSe4‐x) (CZTGeSSe) thin‐film solar cell absorbers with tunable band gap have been prepared. Maximum solar‐conversion total area efficiencies of up to 9.4% are achieved with a Ge content of 30 at.%. Improved performance compared with similarly processed films of Cu2ZnSn(SxSe4‐x) (CZTSSe, 8.4% efficiency) is achieved through controlling Ge loss from the bulk of the absorber film during the high‐temperature selenization treatment, although some Ge loss from the absorber surface is still observed following this step. Despite limitations imposed by elemental losses present at the absorber surface, we find that Ge alloying leads to enhanced performance due to increased minority charge carrier lifetimes as well as reduced voltage‐dependent charge carrier collection. Copyright © 2013 John Wiley & Sons, Ltd.

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Progress in Photovoltaics: Research and Applications

Tập 23 Số 3

376-384

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