Microelectronic Engineering
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Electron beam lithography at 10 keV using an epoxy based high resolution negative resist
Microelectronic Engineering - Tập 84 - Trang 1096-1099 - 2007
A method for in situ measurement of residual layer thickness in nano-imprint lithography
Microelectronic Engineering - Tập 110 - Trang 132 - 2013
Nanoimprint lithography has the advantages of high throughput, sub-10-nm fabrication process, and low cost. However, residual layer encountered in the imprinting process requires removal through reactive ion etching to maintain pattern fidelity. This study proposes a non-destructive method in situ to measure the thickness of residual layer, employing surface plasmon resonance in the imprinted feature during the imprinting stage. Variations in the thickness of the residual layer change the resonance patterns, including the reflectivity and resonance angle. Both experiment and simulation results demonstrate the effectiveness of this method in monitoring the thickness of residual layers.
#Nanoimprint lithography (NIL) #Surface plasmon resonance (SPR) #Residual layer #Non-destructive measurement
Oxygen vacancies in amorphous silica: structure and distribution of properties
Microelectronic Engineering - Tập 80 - Trang 292-295 - 2005
A step-and-repeat UV-nanoimprint lithography process using an elementwise patterned stamp
Microelectronic Engineering - Tập 82 - Trang 180-188 - 2005
Lateral charge transport in the nitride layer of the NROM non-volatile memory device
Microelectronic Engineering - Tập 72 - Trang 426-433 - 2004
Plasmonic nanocavities fabricated by directed self-assembly lithography and nanotransfer printing and used as surface-enhanced Raman scattering substrates
Microelectronic Engineering - Tập 227 - Trang 111309 - 2020
Pseudo-analytical modelling of stress dependent silicon oxidation
Microelectronic Engineering - Tập 19 - Trang 491-494 - 1992
Micro- and nanosystems for biology and medicine
Microelectronic Engineering - Tập 84 - Trang 1681-1684 - 2007
Holographic photolithography for submicron VLSI structures
Microelectronic Engineering - Tập 11 - Trang 127-131 - 1990
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