Microelectronic Engineering

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* Dữ liệu chỉ mang tính chất tham khảo

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Development of micro-stereolithography technology using metal powder
Microelectronic Engineering - Tập 83 - Trang 1253-1256 - 2006
Jin Woo Lee, In Hwan Lee, Dong-Woo Cho
Visualizing stress in silicon micro cantilevers using scanning confocal Raman spectroscopy
Microelectronic Engineering - Tập 85 - Trang 1443-1446 - 2008
M. Bauer, A.M. Gigler, C. Richter, R.W. Stark
Electrically isolated nanostructures fabricated using self-assembled multilayers and a novel negative-tone bi-layer resist stack
Microelectronic Engineering - Tập 83 - Trang 1517-1520 - 2006
Charan Srinivasan, Mary E. Anderson, R. Jayaraman, Paul S. Weiss, Mark W. Horn
Defect transformation under growth of submonolayer oxides on silicon surfaces at low temperatures
Microelectronic Engineering - Tập 59 - Trang 399-404 - 2001
Th Dittrich, T Bitzer, T Rada, N.V Richardson, V.Yu Timoshenko, J Rappich, F Koch
Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure
Microelectronic Engineering - Tập 190 - Trang 7-10 - 2018
Quanli Hu, Mi Ra Park, Haider Abbas, Tae Su Kang, Tae-Sik Yoon, Chi Jung Kang
Polymerization conditions influence on the thermomechanical and dielectric properties of unsaturated polyester–styrene-copolymers
Microelectronic Engineering - Tập 87 - Trang 15-19 - 2010
T. Hanemann, B. Schumacher, J. Haußelt
Analysis on the mutual inductance of planar transformer in CMOS technology
Microelectronic Engineering - Tập 85 - Trang 227-232 - 2008
Heng-Ming Hsu, Chien-Wen Tseng, Hsien-Feng Liao
Study of the post-etch cleaning compatibility with dense and porous ULK materials – characterization of the process impact
Microelectronic Engineering - Tập 83 - Trang 2319-2323 - 2006
D. Rébiscoul, B. Puyrenier, L. Broussous, D. Louis, G. Passemard
Hot-electron induced degradation in AlGaAs/GaAs HEMTs
Microelectronic Engineering - Tập 19 - Trang 405-408 - 1992
C. Tedesco, C. Canali, F. Magistrali, A. Paccagnella, E. Zanoni
Role of residual stress on crack penetration and deflection at a bimaterial interface in a 4-point bend test
Microelectronic Engineering - Tập 84 - Trang 72-79 - 2007
S. Roham, T. Hight
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