Evidence for spatial distribution of traps in MOS systems after fowler nordheim stress

Microelectronic Engineering - Tập 48 - Trang 147-150 - 1999
M. Kerber1, U. Schwalke2, G. Innertsberger1
1Infineon Technologies AG., Corporate Development, 81730 Munich, Germany
2Corporate Research, 81730 Munich, Germany

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